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MT41J256M8HX-15E:D

Name: MT41J256M8HX-15E:D
Rating: 4.8 (15 reviews)

+物料清單

IC DRAM 2GBIT PAR 78FBGA

製造商美光科技股份有限公司。
製造商部分 #MT41J256M8HX-15E:D
有存貨5350

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正品保證

規格

屬性	價值
Part Status	Obsolete
Base Product Number	MT41J256M8
Digi Key Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3
Memory Size	2Gbit
Memory Organization	256M x 8
Memory Interface	Parallel
Clock Frequency	667 MHz
Voltage - Supply	1.425V ~ 1.575V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package / Case	78-TFBGA
Supplier Device Package	78-FBGA (9x11.5)
Packaging	Tray
Access Time	13.5 ns

概述

Description

The MT41J256M8HX-15E:D is a high-performance DRAM memory chip from Micron Technology, part of the DDR3 SDRAM family. It offers a memory capacity of 2 Gigabits organized in a 256 Meg x 8 configuration. This chip is designed to operate at a high speed with a clock rate of up to 667 MHz, translating to a data rate of 1333 MT/s (megatransfers per second). With a supply voltage of 1.5V, it balances power efficiency and performance. The "15E" denotes the specific speed grade, with "D" possibly indicating a particular revision or internal specification.
The MT41J256M8HX-15E:D is suitable for a range of applications, including computing, networking, and consumer electronics, where high density and fast data processing capabilities are essential. It supports various features like on-die termination, programmable CAS latency, and burst lengths, enhancing its versatility and compatibility with diverse systems. As part of the DDR3 family, it benefits from reduced power consumption compared to its predecessors, making it an optimal choice for energy-conscious applications.

Equivalent

The MT41J256M8HX-15E:D chip is a DDR3 SDRAM from Micron. Equivalent products would include DDR3 SDRAM from other manufacturers like Samsung K4B2G1646Q-BCK0, SK Hynix H5TQ2G63GFR-RDC, and Kingston KVR16LN11/4. These equivalents should have similar configurations, such as 2Gb density, 8-bit width, and compatible speed of 1333 MHz (PC3-10600). Always verify electrical and timing characteristics to ensure compatibility.

Features

The MT41J256M8HX-15E:D is a DDR3 SDRAM module from Micron Technology. Key features include:
1. Density and Organization: It offers a 2Gb density and is organized as 256M x 8.
2. Speed and Performance: The module supports a maximum data rate of 1333 MT/s with a clock speed of 667 MHz.
3. Voltage: Operates at a standard voltage of 1.5V, which helps in balancing power consumption and performance.
4. Package Type: Housed in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package, which aids in reliable performance and efficient signal communication.
5. Thermal and Reliability Features: Includes on-die termination (ODT), self-refresh mode, and a temperature sensor to enhance thermal management and reliability.
6. Compatibility: Suitable for a variety of computing applications, including desktops, laptops, and servers, due to its JEDEC standard compliance.
7. Additional Features: Supports features like programmable CAS latency, burst length, and on-chip DLL (Delay-Locked Loop) for better system configuration and performance.
Overall, the MT41J256M8HX-15E:D is designed for high-speed data processing with efficiency and reliability in mind.

Pinout

The MT41J256M8HX-15E:D is a DRAM chip from Micron Technology, specifically a 2Gb DDR3 SDRAM. It typically comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. The pin count for this package is 78 balls.
As for its function, this DRAM chip is designed to provide high-speed data storage and retrieval for computing devices. It is commonly used in systems requiring fast memory, such as computers, servers, and other electronic devices. The DDR3 technology allows for a balance of speed and power efficiency, making it suitable for a variety of applications. The "256M8" in the part number indicates that the chip is organized as 256 Meg x 8-bits.
For precise details on pin configuration and functions, you should refer to the specific datasheet provided by Micron Technology, as it includes comprehensive information about each pin's role, electrical characteristics, and usage.

Manufacturer

The manufacturer of the MT41J256M8HX-15E:D is Micron Technology, Inc. Micron is a leading global company that specializes in the production of semiconductor devices, with a particular focus on memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest memory manufacturers in the world. The company produces a wide range of products, including DRAM (Dynamic Random Access Memory), NAND flash memory, and other semiconductor memory solutions used in computing, consumer, networking, automotive, and mobile products. Micron's innovations in memory technology are critical to the development of high-performance computing systems, and its products are widely used across various industries for their reliability and efficiency.

Application

The MT41J256M8HX-15E:D is a DDR3 DRAM used in various applications requiring efficient and high-speed volatile memory. It is commonly applied in computing and networking equipment, such as servers, routers, and switches, due to its ability to handle data-intensive tasks. Additionally, it is used in consumer electronics like laptops, desktops, and gaming consoles, providing quick data access and improved performance. Embedded systems, including industrial automation and automotive applications, also utilize this DRAM for its reliability and speed. Its versatility in supporting high bandwidth makes it suitable for tasks involving large data processing and real-time operations.

Package

The MT41J256M8HX-15E:D is a DRAM component from Micron's DDR3 SDRAM series. It is typically available in an FBGA (Fine-Pitch Ball Grid Array) package, which is commonly used for memory chips to offer high density and compact form factor.

Frequently Asked Questions

Q: What is the memory capacity and organization of the MT41J256M8HX-15E:D?
A: It has a 2Gbit memory size organized as 256M x 8, suitable for high-density parallel memory applications.

Q: What type of memory technology does this component use?
A: It uses SDRAM - DDR3 technology, offering volatile memory with a parallel interface for high-speed data transfer.

Q: What is the maximum clock frequency supported?
A: It supports a clock frequency of 667 MHz, enabling efficient data processing in DDR3 systems.

Q: What is the supply voltage range for this DRAM?
A: The operating voltage range is 1.425V to 1.575V, compliant with standard DDR3 power requirements.

Q: Is this component suitable for surface mount assembly?
A: Yes, it features surface mount mounting type in a 78-TFBGA package (9x11.5mm), ideal for compact PCB designs.

Q: What is the access time of this DDR3 memory?
A: The access time is 13.5 ns, which aligns with typical DDR3-1333 timing specifications.

Q: What is the operating temperature range for this part?
A: It operates from 0°C to 95°C (TC), suitable for commercial and industrial temperature environments.