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MT40A512M16TB-062E:J

+物料清單

IC DRAM 8GBIT PARALLEL 96FBGA

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製造商部分 #MT40A512M16TB-062E:J
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規格

屬性	價值
PartStatus	Obsolete
BaseProductNumber	MT40A512M16
DigiKeyProgrammable	Not Verified
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR4
MemorySize	8Gbit
MemoryOrganization	512M x 16
MemoryInterface	Parallel
ClockFrequency	1.6 GHz
WriteCycleTime-Word,Page	15ns
Voltage-Supply	1.14V ~ 1.26V
OperatingTemperature	0°C ~ 95°C (TC)
MountingType	Surface Mount
Package	96-TFBGA
SupplierDevicePackage	96-FBGA (7.5x13.5)
Packaging	Tray
AccessTime	19 ns

概述

Description

The MT40A512M16TB-062E:J is a model of DDR4 DRAM chip manufactured by Micron Technology. It is primarily used in computing applications that require fast and efficient memory performance, such as in servers, desktops, and other high-performance computing systems. This particular chip features a 512 Megabit x 16-bit configuration, offering a total of 8 gigabits of storage capacity. The "062E" in its designation indicates specific performance characteristics, including speed grade and power consumption, with this model typically supporting standard DDR4 data rates. The "J" at the end typically refers to a specific package type or other variant-specific detail, ensuring compatibility with certain hardware requirements. DDR4 technology provides improvements over previous generations, such as increased speed, higher capacity, and lower voltage requirements, which contribute to better overall system performance and efficiency. This makes the MT40A512M16TB-062E:J suitable for a wide range of modern computing needs.

Equivalent

The MT40A512M16TB-062E:J is a DDR4 SDRAM chip. Equivalent products from other manufacturers include:
1. Samsung: K4A8G165WB-BCRC
2. SK Hynix: H5AN8G6NCJ-XNC
3. Kingston: D2516EC4BXGGB
These chips have similar specifications in terms of capacity, speed, and form factor. Always check datasheets for specific compatibility requirements.

Features

The MT40A512M16TB-062E:J is a DDR4 SDRAM memory component featuring a 4Gb density and x16 data width configuration. It operates at a speed of 3200 MT/s (megatransfers per second) and comes in a compact FBGA (Fine-Pitch Ball Grid Array) package. This memory is optimized for high-performance computing and is commonly used in desktops, laptops, and servers.
Key features include:
- High data transfer rates with a maximum speed of 3200 MT/s.
- Low power consumption, contributing to improved energy efficiency in systems.
- On-die termination (ODT) and dynamic on-die termination for signal integrity.
- Support for bank group architecture, which enhances performance by reducing latency.
- Compatibility with standard DDR4 interfaces and JEDEC-compliant specifications.
This memory component is designed to improve multitasking capabilities and enhance overall system responsiveness, making it suitable for demanding applications that require fast and reliable data access.

Pinout

The MT40A512M16TB-062E:J is a DDR4 SDRAM component manufactured by Micron Technology. It comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
Pin Count:
- 96 balls (pins)
Functions:
- The component serves as a memory module with a 512Mb x 16 configuration, meaning it offers a total capacity of 8Gb.
- It operates with DDR4 technology, which provides high-speed data transfer rates.
- Key functions include data storage and retrieval for computing systems.
- It features key DDR4 functions such as bank groups, a high-speed data bus, differential signaling for the clock, and commands to support data transfers.
- It supports key operations like read, write, and refresh.
- It is also equipped with features like On-Die Termination (ODT) and Data Bus Inversion (DBI).
The MT40A512M16TB-062E:J is typically used in applications requiring high-performance memory solutions, such as servers, desktops, and other computing devices.

Manufacturer

The manufacturer of the MT40A512M16TB-062E:J is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company produces a wide range of products, including DRAM, NAND flash memory, and other semiconductor devices used in various applications such as computing, networking, and mobile devices. Micron is known for its innovation in memory technology, providing solutions that enhance the performance and efficiency of electronic devices.

Application

The MT40A512M16TB-062E:J is a DDR4 SDRAM chip commonly used in applications requiring high-speed data processing and efficient memory management. It is suitable for:
1. Computing Devices: Enhances performance in desktops, laptops, and workstations.
2. Servers and Data Centers: Supports high-performance computing and efficient data handling.
3. Networking Equipment: Facilitates faster data transmission in routers and switches.
4. Embedded Systems: Used in automotive electronics, industrial automation, and IoT devices for reliable performance.
5. Consumer Electronics: Powers high-performance gaming consoles and smart TVs.
Its high-speed data rates and efficient architecture make it ideal for applications demanding rapid data throughput and low latency.

Package

The MT40A512M16TB-062E:J is a DRAM component housed in a 96-ball, 9mm x 14mm, thin fine-pitch ball grid array (TFBGA) package. This type of package is designed to offer high-density memory integration and efficient thermal performance while maintaining a compact form factor suitable for space-constrained applications.

Frequently Asked Questions

Q: What is the memory size and organization of the MT40A512M16TB-062E:J?
A: It features 8Gbit memory organized as 512M x 16 bits, suitable for high-bandwidth parallel data processing.

Q: What is the clock frequency and access time for this DDR4 SDRAM?
A: The clock frequency is 1.6 GHz, with an access time of 19 ns, enabling fast read operations in high-speed computing.

Q: What is the operating temperature range for this component?
A: It operates from 0°C to 95°C (TC), making it suitable for industrial and embedded applications within this thermal envelope.

Q: What voltage supply does the MT40A512M16TB-062E:J require?
A: It requires a supply voltage of 1.14V to 1.26V, typical for DDR4 memory to balance power efficiency and performance.

Q: Is this component available in a surface-mount package?
A: Yes, it is surface-mount in a 96-TFBGA package with a supplier device package of 96-FBGA (7.5x13.5mm), ideal for compact PCB designs.

Q: What is the write cycle time for Word and Page operations?
A: The write cycle time is 15ns, ensuring efficient data programming in memory-intensive tasks like AI or networking.