MT40A2G8VA-062E:B

圖片僅供參考

MT40A2G8VA-062E:B

+物料清單

IC DRAM 16GBIT PARALLEL 78FBGA

  • 製造商美光科技股份有限公司。

  • 製造商部分 #MT40A2G8VA-062E:B

  • 有存貨6373

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Part Status Obsolete
Base Product Number MT40A2G8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 4G x 4
Memory Interface Parallel
Clock Frequency 1.6 GHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 78-TFBGA
Supplier Device Package 78-FBGA (10x11)
Packaging Tray
Access Time 19 ns

概述

Description

The MT40A2G8VA-062E:B is a DRAM memory chip manufactured by Micron Technology. It belongs to the DDR4 SDRAM family, which is commonly used in desktops, laptops, and servers for its high-speed operation and efficiency. This specific model features an 8Gb (gigabit) capacity, organized internally as 512M x 8, which allows it to manage large volumes of data effectively.
Operating at a data transfer rate of 2400 MT/s (megatransfers per second), it is designed for high-performance applications. The "062E" in its designation refers to its timing characteristics and voltage requirements, ensuring compatibility with various systems and platforms. Its FBGA (Fine-Pitch Ball Grid Array) package aids in optimizing thermal performance and minimizing physical footprint, making it suitable for compact devices. Additionally, the chip supports advanced features like on-chip ECC (Error Correction Code), which enhances data integrity and reliability.
Overall, the MT40A2G8VA-062E:B is an efficient, reliable choice for systems requiring robust memory solutions.

Equivalent

The MT40A2G8VA-062E:B is a DDR4 SDRAM chip manufactured by Micron. Equivalent products from other manufacturers include:
1. Samsung: K4A8G085WB-BCRC
2. SK Hynix: H5AN8G8NAFR-UHC
3. Kingston: D4616AG8ABGJD
4. Nanya: NT5CC512M8EN-EK
These chips are generally similar in terms of capacity, speed, and functionality, but specific compatibility should be verified based on the application requirements.

Features

The MT40A2G8VA-062E:B is a DRAM module manufactured by Micron Technology. It is part of the DDR4 SDRAM family, designed for high-performance computing and data-intensive applications. Key features include:
1. Memory Type: DDR4 SDRAM, delivering faster data transfer rates and improved bandwidth compared to previous generations.

2. Capacity: Typically configured in gigabits (Gb), this model provides 16Gb density, allowing for substantial data storage and quick access.
3. Speed: Operates at high clock speeds, with data rates of up to 3200 MT/s, facilitating rapid data processing and system responsiveness.
4. Voltage: Optimized for low power consumption with a standard operating voltage of 1.2V, enhancing energy efficiency.
5. Form Factor: Available in various configurations, including RDIMM, UDIMM, and SODIMM, suitable for diverse platforms and compatibility needs.
6. Reliability: Incorporates error-correcting code (ECC) for enhanced data integrity and reliability in mission-critical applications.
7. Compatibility: Aligns with JEDEC standards, ensuring broad compatibility across different systems and devices.
These features make the MT40A2G8VA-062E:B suitable for enterprise servers, data centers, and high-performance computing environments.

Pinout

The MT40A2G8VA-062E:B is a DRAM component from Micron's DDR4 SDRAM product family. This component is organized as 2Gb (Gigabit) with an x8 configuration. It typically comes in a 78-ball FBGA (Fine Ball Grid Array) package.
In terms of pin count, the MT40A2G8VA-062E:B has 78 balls (pins), which include a combination of data, address, control, power, and ground pins. The key functions of these pins include:
1. Data Pins (DQ): Used for input/output of data.
2. Address Pins (A): Used to select memory addresses.
3. Control Pins (such as CS#, RAS#, CAS#, WE#): Used for controlling operations like chip select, row access, column access, and write enable.
4. Clock Pins (CK, CK#): Used for synchronizing data transactions.
5. Power and Ground Pins (VDD, VSS): Supply power and ground connections to the IC.
6. Other pins (such as ODT, CKE, DM, DQS, DQS#): Used for on-die termination, clock enable, data masking, and data strobe functions.
This configuration is typical for a DDR4 SDRAM module, providing high-speed data transfer and efficient memory management.

Manufacturer

The MT40A2G8VA-062E:B is manufactured by Micron Technology, Inc. Micron is a major American company that specializes in the design and production of semiconductors, particularly memory and storage solutions. The company produces a wide range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). Micron is known for its innovation in memory technologies and is one of the leading companies in the global semiconductor industry. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets, including computing, mobile, automotive, industrial, and data centers.

Application

The MT40A2G8VA-062E:B is a DRAM memory chip, specifically a DDR4 SDRAM component. Its primary application areas include:
1. Computing Devices: Used in desktops, laptops, and servers for efficient data processing and storage.
2. Networking Equipment: Supports routers, switches, and other network infrastructure devices requiring high-speed data handling.
3. Data Centers: Provides memory for servers and storage systems, enhancing performance and scalability.
4. Embedded Systems: Incorporated into embedded applications in automotive, industrial, and IoT devices for reliable memory support.
5. Consumer Electronics: Utilized in TVs, gaming consoles, and other electronic devices requiring high-speed memory access.
These applications benefit from the chip's high bandwidth, low latency, and energy efficiency features.

Package

The MT40A2G8VA-062E:B is a DRAM module with a package type that typically follows JEDEC standards for DDR4 DRAMs. It is commonly found in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. This package type is used for surface mounting on PCBs, offering high-density and high-performance memory solutions in computing applications.

Frequently Asked Questions


Q: What is the memory density and organization of the MT40A2G8VA-062E:B?
A: It has a 16Gbit density organized as 4G x 4 bits, suitable for high-capacity DDR4 applications.


Q: What is the maximum clock frequency supported?
A: It supports a clock frequency of 1.6 GHz, enabling high-speed data transfer for DDR4 SDRAM interfaces.


Q: What is the operating voltage range for this DRAM?
A: The voltage supply range is 1.14V to 1.26V, compliant with DDR4 standard VDD requirements.


Q: What is the access time and write cycle time?
A: Access time is 19 ns; write cycle time for word/page is 15 ns, ensuring fast read/write performance.


Q: What is the memory interface and package type?
A: It uses a parallel memory interface and comes in a 78-TFBGA package with a 78-FBGA (10x11mm) supplier device package.


Q: Is this component surface mount and what is its operating temperature?
A: Yes, it is surface mount (SMD), with an operating temperature range of 0°C to 95°C (TC).


Q: What packaging format is used for delivery?
A: It is shipped in Tray packaging, suitable for automated assembly lines.


與MT40A2G8VA-062E:B相關的產品