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MT29F512G08CMCEBJ4-37ITR:E

Name: MT29F512G08CMCEBJ4-37ITR:E
Rating: 4.8 (15 reviews)

+物料清單

IC FLASH 512GBIT PAR 132VBGA

製造商美光科技股份有限公司。
製造商部分 #MT29F512G08CMCEBJ4-37ITR:E
有存貨3044

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正品保證

規格

屬性	價值
Part Status	Obsolete
Base Product Number	MT29F512G08
Digi Key Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND (MLC)
Memory Size	512Gbit
Memory Organization	64G x 8
Memory Interface	Parallel
Clock Frequency	267 MHz
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	132-VBGA
Supplier Device Package	132-VBGA (12x18)
Packaging	Tray

概述

Description

The MT29F512G08CMCEBJ4-37ITR:E is a NAND flash memory chip manufactured by Micron Technology. It is part of the MT29F series, which is known for high-density storage solutions. This specific model features a storage capacity of 512 gigabits (Gb), organized in a way that supports efficient data storage and retrieval. The chip is designed for use in a variety of applications, including solid-state drives (SSDs), mobile devices, and other embedded systems requiring reliable, non-volatile memory solutions.
The chip utilizes advanced NAND technology, offering a balance of performance and data retention. It features a Toggle DDR interface and is designed to operate at high speeds, making it suitable for applications that require fast read and write capabilities. The "-37ITR" in the part number indicates specific performance and temperature characteristics, ensuring it can operate effectively in industrial temperature ranges.
Overall, the MT29F512G08CMCEBJ4-37ITR:E is a robust and versatile memory chip suitable for a wide range of modern electronic applications.

Equivalent

The MT29F512G08CMCEBJ4-37ITR:E is a 512Gb NAND Flash memory chip by Micron. Equivalent products include:
1. Samsung K9MDGY8S5M - 512Gb NAND Flash
2. Toshiba TC58TEG6DCJTA00 - 512Gb NAND Flash
3. SK Hynix H27QDG8VEBIR - 512Gb NAND Flash
4. Western Digital W29N04GVSIAA - 512Gb NAND Flash
These equivalents offer similar NAND technology and capacity, but always verify pin compatibility and specific features for your application.

Features

The MT29F512G08CMCEBJ4-37ITR:E is a NAND Flash memory chip manufactured by Micron Technology. Key features include:
1. Capacity: 512 Gb (Gigabits).
2. Type: SLC (Single-Level Cell) NAND Flash, which offers higher endurance and reliability.
3. Interface: NAND Flash interface for data transfers.
4. Voltage: Operates at 3.3V.
5. Performance: Designed for high-speed data access and efficient storage solutions.
6. Temperature Range: Industrial temperature range typically supporting -40°C to 85°C, making it suitable for various applications.
7. Package: Available in a compact package suitable for space-constrained designs.
8. Endurance: High program/erase cycles, typical of SLC technology, ensuring longevity.
9. Applications: Suitable for use in industrial, automotive, and other demanding environments where reliability is crucial.
This component is ideal for systems requiring robust storage solutions with high endurance and reliability, like embedded systems, networking devices, and other industrial applications.

Pinout

The MT29F512G08CMCEBJ4-37ITR:E is a NAND flash memory chip produced by Micron Technology. This particular part is a 512Gb (gigabit) NAND flash memory device, organized as 64Gb x 8. It typically comes in a package with 132 pins.
The primary function of this NAND flash memory is to provide non-volatile storage, meaning it retains data without requiring a continuous power supply. It is commonly used in a variety of applications, such as solid-state drives (SSDs), memory cards, and other storage solutions where large amounts of data storage are needed efficiently.
The device supports features such as error correction code (ECC), wear leveling, and bad block management to ensure data integrity and reliability over its lifetime. It operates with a supply voltage of 3.3V and supports high-speed interfaces for rapid data transfers.
Due to its high storage capacity and endurance, this NAND flash memory chip is suitable for use in consumer electronics, enterprise storage solutions, and embedded systems.

Manufacturer

The MT29F512G08CMCEBJ4-37ITR:E is manufactured by Micron Technology, Inc. Micron is a multinational corporation based in the United States that specializes in the production of memory and storage solutions. The company is known for manufacturing a wide range of semiconductor products, including dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). These products are integral to various applications in computing, mobile, automotive, and industrial markets.
Micron is one of the leading companies in the semiconductor industry, contributing significantly to the development and innovation of memory technologies. The company focuses on providing advanced solutions that cater to the demanding needs of modern data-driven and digital-centric environments. Micron's products are utilized in various sectors such as consumer electronics, data centers, networking, and more, underscoring its importance in the technology infrastructure.

Application

The MT29F512G08CMCEBJ4-37ITR:E is a NAND Flash memory chip used in various applications. Common application areas include:
1. Consumer Electronics: Storage for smartphones, tablets, digital cameras, and media players.
2. Computing Devices: Embedded storage solutions for laptops, desktops, and servers.
3. Industrial Applications: Data logging and storage in industrial automation systems.
4. Automotive Systems: Infotainment systems, navigation systems, and data recording in vehicles.
5. Networking Equipment: Storage for routers, switches, and other networking devices.
6. Medical Devices: Data storage in diagnostic equipment and portable medical devices.
7. IoT Devices: Embedded storage for smart devices and sensors.
These applications benefit from the chip's reliability, density, and performance characteristics.

Package

The MT29F512G08CMCEBJ4-37ITR:E is a NAND Flash memory chip from Micron Technology, packaged in a TSOP (Thin Small Outline Package) format. TSOP is commonly used for memory devices, providing a compact, surface-mount design suitable for various electronic applications.

Frequently Asked Questions

Q: What is the memory capacity and organization of this NAND Flash?
A: It offers 512Gbit density organized as 64G x 8, suitable for high-density storage in embedded systems.

Q: Is this component compatible with parallel interfaces in legacy designs?
A: Yes, it uses a standard parallel memory interface, ideal for designs requiring fast data transfer without serial protocol overhead.

Q: What is the operating temperature range and voltage supply?
A: It operates from -40°C to 85°C with a supply voltage of 2.7V to 3.6V, supporting industrial temperature applications.

Q: What is the maximum clock frequency for read operations?
A: The device supports a clock frequency of up to 267 MHz, enabling high-speed data access for demanding workloads.

Q: What package type does this part use?
A: It comes in a 132-ball VBGA package (12x18mm), surface-mount for compact PCB layouts.

Q: Is this a multi-level cell (MLC) NAND Flash?
A: Yes, it utilizes MLC technology for higher storage density per die, balancing cost and performance.

Q: Can this component be used in new designs or is it obsolete?
A: The part status is marked as Obsolete, so it is recommended for legacy support or existing production runs only.