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MT29F2G08ABAEAH4-ITX:E

Name: MT29F2G08ABAEAH4-ITX:E
Rating: 4.8 (15 reviews)

+物料清單

IC FLASH 2GBIT PARALLEL 63VFBGA

製造商美光科技股份有限公司。
製造商部分 #MT29F2G08ABAEAH4-ITX:E
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正品保證

規格

屬性	價值
Part Status	Obsolete
Base Product Number	MT29F2G08
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	2Gbit
Memory Organization	256M x 8
Memory Interface	Parallel
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	63-VFBGA
Supplier Device Package	63-VFBGA (9x11)
Packaging	Tray

概述

Description

The MT29F2G08ABAEAH4-ITX:E is a NAND Flash memory chip produced by Micron Technology. It's part of the MT29 series, which is known for its reliability and efficiency in data storage solutions. This specific model is a 2Gb (gigabit), or 256MB (megabyte), NAND Flash device that uses a single-level cell (SLC) architecture, offering faster data access and enhanced endurance compared to multi-level cell (MLC) designs.
The chip features an 8-bit interface, making it compatible with various microcontrollers and embedded systems. It's designed for industrial temperature ranges, thus suitable for harsh environments, with a temperature range typically from -40°C to +85°C. This makes it ideal for applications in automotive, industrial automation, and other demanding sectors.
The MT29F2G08ABAEAH4-ITX:E supports advanced error correction code (ECC), wear leveling, and bad block management to ensure data integrity and longevity. Its compact TSOP (Thin Small Outline Package) enhances its versatility for space-constrained applications, providing a robust solution for non-volatile data storage needs.

Equivalent

The MT29F2G08ABAEAH4-ITX:E is a 2Gb NAND Flash memory chip produced by Micron. Equivalent products from other manufacturers might include:
1. Samsung: K9F2G08U0C
2. Toshiba: TC58NVG2S3HTA00
3. SK Hynix: H27U2G8F2BTR
4. Kioxia: TH58NVG2S3HTA00
These chips have similar specifications in terms of capacity, interface, and performance, making them suitable alternatives. Always check detailed specs to ensure compatibility.

Features

The MT29F2G08ABAEAH4-ITX:E is a 2Gb NAND Flash memory device manufactured by Micron Technology. Key features include:
1. Capacity: 2Gb (gigabit), organized as 256 blocks with 64 pages per block, and 2112 bytes per page.
2. Interface: Uses an 8-bit I/O interface for data transfer.
3. Performance: Features fast read and write capabilities with a page read time of 25 microseconds and a typical write time of 200 microseconds per page.
4. Endurance: Offers robust endurance capable of withstanding multiple program/erase cycles.
5. Voltage Range: Operates within a voltage range of 2.7 to 3.6 volts.
6. Temperature: Designed for industrial temperature ranges, operating between -40°C to +85°C.
7. Packaging: Available in a TSOP (Thin Small Outline Package) for space-efficient board design.
8. Error Correction: Supports ECC (Error Correction Code) to enhance data integrity.
9. Applications: Suitable for use in embedded systems, industrial applications, and consumer electronics.
These features make the MT29F2G08ABAEAH4-ITX:E a reliable choice for various applications requiring non-volatile storage.

Pinout

The MT29F2G08ABAEAH4-ITX:E is a NAND Flash memory device manufactured by Micron. It features:
- Pin Count: Typically, NAND Flash memory chips like this one come in a 48-pin TSOP or 63-ball BGA package. The exact configuration depends on the specific package type.
- Functions:
- Data Storage: Non-volatile storage for a wide range of applications, maintaining data without power.
- I/O Interface: Includes pins for data input/output, command, and address inputs, typically supporting an 8-bit data bus.
- Control Signals: Contains pins for control signals such as Chip Enable (CE#), Write Enable (WE#), Read Enable (RE#), Command Latch Enable (CLE), Address Latch Enable (ALE), and Ready/Busy (R/B#).
- Power: Pins for Vcc (core supply voltage) and Vss (ground).
These pins and functions enable the MT29F2G08ABAEAH4-ITX:E to perform efficiently as a storage solution in various electronic devices.

Manufacturer

The MT29F2G08ABAEAH4-ITX:E is a NAND Flash memory chip manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company designs and produces a wide range of products, including DRAM, NAND, and NOR Flash memory, which are used in various computing, mobile, automotive, and industrial applications.
Micron, headquartered in Boise, Idaho, is recognized for its innovation in memory technologies and plays a critical role in the development of advanced memory and storage solutions. The company's products are pivotal in enabling the functionality of modern electronic devices, such as computers, smartphones, and data centers, by providing the necessary storage and memory capabilities.
In addition to its manufacturing operations, Micron is involved in extensive research and development activities to advance memory technology and improve the performance and efficiency of its products. As a key player in the semiconductor industry, Micron has a significant impact on the technological advancements that drive the digital world.

Application

The MT29F2G08ABAEAH4-ITX:E is a NAND Flash memory chip commonly used in applications requiring reliable data storage. It is suitable for use in smartphones, tablets, digital cameras, and other consumer electronics due to its efficient storage capabilities. Additionally, it can be employed in industrial applications, such as embedded systems and automotive electronics, where robust and dependable data storage is crucial. Its ability to support frequent read/write cycles and store large amounts of data makes it ideal for use in solid-state drives (SSDs) and as a boot or cache memory in various computing devices.

Package

The MT29F2G08ABAEAH4-ITX:E is a NAND Flash memory component from Micron. It typically comes in a TSOP (Thin Small Outline Package) type, which is commonly used for memory chips due to its compact size and efficient heat dissipation properties.

Frequently Asked Questions

Q: Is the MT29F2G08ABAEAH4-ITX:E suitable for industrial temperature ranges?
A: Yes, it operates from -40°C to 85°C, making it ideal for industrial-grade designs requiring extended temperature endurance.

Q: What is the memory density and interface type of this NAND Flash?
A: It has 2Gbit (256M x 8) capacity with a parallel interface, supporting standard NAND flash command protocol.

Q: What voltage supply does this component require?
A: It requires a single power supply from 2.7V to 3.6V, compatible with common 3.3V logic systems.

Q: Can this part be used in new designs or is it obsolete?
A: The part status is "Obsolete," so it is not recommended for new designs; use only for replacement or legacy support.

Q: What package option is available for this device?
A: It comes in a 63-VFBGA (9x11mm) surface-mount package, optimized for space-constrained PCB layouts.

Q: Is the memory pre-assembled in tray packaging?
A: Yes, it is shipped in tray packaging, suitable for manual or automated pick-and-place assembly.

Q: What is the memory organization of the MT29F2G08ABAEAH4?
A: It is organized as 256M x 8 bits, providing byte-addressable access via the parallel interface.