MT28EW256ABA1HPC-0SIT

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MT28EW256ABA1HPC-0SIT

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IC FLASH 256MBIT PARALLEL 64LBGA

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規格

屬性 價值
Part Status Last Time Buy
Base Product Number MT28EW256
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 256Mbit
Memory Organization 32M x 8, 16M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 64-LBGA
Supplier Device Package 64-LBGA (11x13)
Packaging Tray
Access Time 75 ns

概述

Description

The MT28EW256ABA1HPC-0SIT is a high-performance, single-level cell (SLC) NAND flash memory device. It offers a storage capacity of 256 megabits and is designed for applications requiring fast data access, high reliability, and endurance. The device operates within a voltage range of 1.70V to 2.00V and features a standard asynchronous interface, making it compatible with a variety of systems and processors.
Key features include robust data protection and error correction capabilities, which enhance data integrity and device longevity. The MT28EW256ABA1HPC-0SIT is suitable for use in industrial, automotive, and consumer electronics where temperature tolerance and durability are critical. The device supports a wide operating temperature range, typically from -40°C to +85°C, making it adaptable for extreme environmental conditions.
Additionally, the MT28EW256ABA1HPC-0SIT is engineered to provide rapid data transfer speeds and efficient power consumption, which are critical for maintaining high performance in power-sensitive applications. Its compact form factor makes it suitable for integration into various space-constrained designs.

Equivalent

The MT28EW256ABA1HPC-0SIT is a 256 Mb NOR Flash memory chip from Micron. Equivalent products may include other 256 Mb NOR Flash chips from manufacturers like Winbond (e.g., W25Q256JV), Cypress/Infineon (e.g., S25FL256L), and Macronix (e.g., MX25L256). It's important to compare specifications such as interface, voltage, and package to ensure compatibility. Always verify with datasheets to ensure the alternative meets all design requirements.

Features

The MT28EW256ABA1HPC-0SIT is a NAND Flash memory chip designed for reliable data storage and efficient performance. Key features include:
1. Density: 256 Gb (Gigabits), suitable for high-capacity storage needs.
2. Architecture: Multi-level cell (MLC) technology, balancing performance and cost-effectiveness.
3. Interface: ONFI (Open NAND Flash Interface) compliance, allowing for compatibility with a wide range of host controllers.
4. Performance: Fast read/write speeds, optimizing data transfer rates for better efficiency.
5. Endurance: High program/erase cycles, ensuring longevity and durability in various applications.
6. Package: Available in a compact TSOP (Thin Small Outline Package), making it suitable for space-constrained designs.
7. Voltage: Operates on a low voltage, enhancing power efficiency and reducing operational costs.
8. Temperature Range: Industrial temperature range (-40°C to 85°C), ensuring functionality in diverse environments.
These features make the MT28EW256ABA1HPC-0SIT ideal for applications requiring dependable and high-capacity memory solutions, such as consumer electronics, industrial systems, and embedded devices.

Pinout

The MT28EW256ABA1HPC-0SIT is a 256Mb NOR Flash memory chip from Micron Technology. It features a 56-pin TSOP (Thin Small Outline Package). This NOR Flash memory is used in applications requiring high-speed data access and reliability, such as code storage for embedded systems.
The key functions of this memory chip include:
1. Random Access Memory (RAM): Allows quick access to stored data and code execution.
2. Non-Volatile Storage: Retains data even when power is off, making it ideal for firmware storage.
3. Read/Write Operations: Supports read and write operations with typical access times designed for high-speed data retrieval.
4. Erase Functionality: Offers block erase, sector erase, and chip erase operations for flexible data management.
5. Security Features: Includes protection mechanisms to prevent unauthorized data access or modification.
Overall, the MT28EW256ABA1HPC-0SIT is designed for high-performance applications requiring fast, reliable, and secure data storage in embedded systems.

Manufacturer

The MT28EW256ABA1HPC-0SIT is manufactured by Micron Technology, Inc. Micron is a leading American company specializing in semiconductor products, with a strong focus on memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for producing dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices. The company's products are widely used in computing, networking, automotive, mobile, and consumer electronics applications. Micron has established itself as a key player in the global semiconductor industry, providing advanced technology solutions that drive innovation and enable high-performance computing and data storage.

Application

The MT28EW256ABA1HPC-0SIT is a 256Mb (megabit) NOR Flash memory device. It is typically used in applications that require high-performance, non-volatile storage with fast read and write capabilities. Key application areas include:
1. Embedded Systems: Used for storing firmware and boot code.
2. Consumer Electronics: Utilized in devices like set-top boxes and digital cameras for code storage.
3. Automotive: Employed in vehicle infotainment systems and advanced driver-assistance systems (ADAS).
4. Industrial Control: Suitable for storing operational software in industrial machinery.
5. Networking Equipment: Used in routers and switches for configuration and operational software.
These applications benefit from the high reliability and speed of NOR Flash memory.

Package

The MT28EW256ABA1HPC-0SIT is typically available in a Ball Grid Array (BGA) package type, which is a common packaging for integrated circuits, particularly for flash memory devices like this one.

Frequently Asked Questions


Q: What is the memory size and organization of the MT28EW256ABA1HPC-0SIT?
A: It offers 256Mbit density, organized as 32M x 8 or 16M x 16, supporting byte or word mode via parallel interface.


Q: What is the supply voltage range for this NOR Flash device?
A: The operating voltage range is 2.7V to 3.6V, suitable for standard 3.3V systems with tolerance for low-voltage margins.


Q: What is the typical access time for read operations?
A: The random access time is 75 ns, ensuring fast read performance for code execution in embedded applications.


Q: Can this device operate in extended temperature environments?
A: Yes, it operates over an industrial temperature range of -40°C to 85°C (TA), making it suitable for harsh conditions.


Q: What is the package type and mounting style?
A: It comes in a 64-LBGA (11x13 mm) package with surface mount design, ideal for space-constrained layouts.


Q: How is the write cycle time specified for word or page programming?
A: The write cycle time for word or page programming is 60ns, enabling efficient memory updates in high-speed systems.


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