規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | LDMOS |
| Frequency | 512MHz |
| Gain | 26dB |
| Voltage-Test | 50 V |
| Current-Test | 100 mA |
| Power-Output | 100W |
| Voltage-Rated | 133 V |
| Package/Case | NI-780-4 |
概述
Description
The MRFE6VP100HR5 is a high-power RF LDMOS transistor from NXP Semiconductors, designed for industrial, scientific, and medical (ISM) applications, as well as broadcast and aerospace systems.
### Key Features:
- Frequency Range: 1.8–600 MHz
- Output Power: Up to 100W (dependent on frequency)
- High Efficiency: Optimized for Class AB operation
- Voltage Rating: 50V operation
- Robustness: High ruggedness for demanding RF environments
### Applications:
- RF amplifiers (HF to VHF/UHF)
- ISM (e.g., plasma generation, RF heating)
- Broadcast transmitters
- Aerospace & defense systems
### Package:
- Industry-standard TO-270-4 (SOT1225) for efficient thermal management.
This transistor is known for its reliability, high gain, and excellent thermal performance, making it suitable for high-power RF amplification in harsh conditions.
For detailed specs, refer to the NXP datasheet.
### Key Features:
- Frequency Range: 1.8–600 MHz
- Output Power: Up to 100W (dependent on frequency)
- High Efficiency: Optimized for Class AB operation
- Voltage Rating: 50V operation
- Robustness: High ruggedness for demanding RF environments
### Applications:
- RF amplifiers (HF to VHF/UHF)
- ISM (e.g., plasma generation, RF heating)
- Broadcast transmitters
- Aerospace & defense systems
### Package:
- Industry-standard TO-270-4 (SOT1225) for efficient thermal management.
This transistor is known for its reliability, high gain, and excellent thermal performance, making it suitable for high-power RF amplification in harsh conditions.
For detailed specs, refer to the NXP datasheet.
Equivalent
Equivalent products to the MRFE6VP100HR5 (NXP RF LDMOS transistor) include:
1. BLF6G22-10G (Ampleon)
2. BLF6G21-10G (Ampleon)
3. PTVA101K02EV (Wolfspeed)
4. STAC2942B (STMicroelectronics)
These alternatives offer similar RF power performance (100W+, 1-1000MHz) for applications like broadcast, industrial, and RF energy. Verify specs for exact compatibility.
1. BLF6G22-10G (Ampleon)
2. BLF6G21-10G (Ampleon)
3. PTVA101K02EV (Wolfspeed)
4. STAC2942B (STMicroelectronics)
These alternatives offer similar RF power performance (100W+, 1-1000MHz) for applications like broadcast, industrial, and RF energy. Verify specs for exact compatibility.
Features
The MRFE6VP100HR5 is a high-power RF LDMOS transistor by NXP, designed for industrial, scientific, and medical (ISM) applications. Key features:
- Frequency Range: 1.8–600 MHz
- Output Power: 100W (P1dB)
- Gain: 19 dB typical at 100 MHz
- Efficiency: 65% typical (drain efficiency)
- Voltage: 50V operation
- Package: High-thermal-performance HV-7S flange
- Robustness: High ruggedness with 65:1 VSWR tolerance
- Applications: RF amplifiers, plasma generators, and broadcast systems
Compact, reliable, and optimized for high-efficiency performance.
- Frequency Range: 1.8–600 MHz
- Output Power: 100W (P1dB)
- Gain: 19 dB typical at 100 MHz
- Efficiency: 65% typical (drain efficiency)
- Voltage: 50V operation
- Package: High-thermal-performance HV-7S flange
- Robustness: High ruggedness with 65:1 VSWR tolerance
- Applications: RF amplifiers, plasma generators, and broadcast systems
Compact, reliable, and optimized for high-efficiency performance.
Pinout
The MRFE6VP100HR5 is a high-power RF LDMOS transistor in a flanged ceramic package (BLF888) with 4 pins:
1. Gate (G): Input for RF signal and biasing.
2. Drain (D): Output for amplified RF signal and main power supply.
3. Source (S): Ground connection, internally bonded to the flange.
4. Flange: Electrically connected to the source, serves as both ground and heatsink.
Key Functions:
- Designed for RF power amplification (30–512 MHz).
- High efficiency (up to 70%) and power output (100W typical).
- Used in broadcast, industrial, and amateur radio applications.
Package:
- 4-pin configuration (G, D, S, flange).
- Flange must be properly grounded and heatsinked.
1. Gate (G): Input for RF signal and biasing.
2. Drain (D): Output for amplified RF signal and main power supply.
3. Source (S): Ground connection, internally bonded to the flange.
4. Flange: Electrically connected to the source, serves as both ground and heatsink.
Key Functions:
- Designed for RF power amplification (30–512 MHz).
- High efficiency (up to 70%) and power output (100W typical).
- Used in broadcast, industrial, and amateur radio applications.
Package:
- 4-pin configuration (G, D, S, flange).
- Flange must be properly grounded and heatsinked.
Application
The MRFE6VP100HR5 is a high-power RF LDMOS transistor primarily used in:
- RF Power Amplifiers: For broadcast, industrial, and communication systems.
- FM & TV Broadcast: High-efficiency transmitters.
- Industrial Heating & Plasma Generation: High-frequency energy applications.
- Amateur Radio & Military Comms: Robust performance in demanding environments.
Its high power (up to 100W) and wide frequency range (up to 1GHz) make it ideal for high-performance RF amplification.
- RF Power Amplifiers: For broadcast, industrial, and communication systems.
- FM & TV Broadcast: High-efficiency transmitters.
- Industrial Heating & Plasma Generation: High-frequency energy applications.
- Amateur Radio & Military Comms: Robust performance in demanding environments.
Its high power (up to 100W) and wide frequency range (up to 1GHz) make it ideal for high-performance RF amplification.
Package
The MRFE6VP100HR5 is a high-power RF LDMOS transistor from NXP. It comes in a HVSON-4 (Thermally Enhanced Plastic Package) with an exposed flange for improved thermal performance. The package is designed for high-efficiency RF applications, typically in the 1.8–600 MHz range, and supports high-voltage operation (up to 50V). Compact and robust, it suits base stations and industrial RF amplifiers.
