MMUN2113LT1G

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MMUN2113LT1G

+物料清單

TRANS PREBIAS PNP 50V SOT23-3

  • 製造商安森美

  • 製造商部分 #MMUN2113LT1G

  • 有存貨2698

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90-日售後保障

正品保證

規格

屬性 價值
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistors Included R1 and R2
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (h FE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMUN2113

概述

Description

MMUN2113LT1G is an academic course that focuses on the principles and practices of international relations and diplomacy. It aims to equip students with a foundational understanding of global governance, key international organizations, and the dynamics of multilateral negotiations. The course typically covers topics such as the role of the United Nations, conflict resolution, humanitarian interventions, and the impact of globalization on state relations.
Students engage in critical analysis of contemporary global issues, enhancing their ability to think strategically about international policymaking. Through lectures, case studies, and simulations, participants develop skills in negotiation, communication, and analytical thinking. The course also emphasizes the importance of cultural awareness and ethical considerations in international affairs.
Overall, MMUN2113LT1G prepares students for careers in diplomacy, international law, and global advocacy, fostering a nuanced understanding of the complexities of global interactions.

Equivalent

The MMUN2113LT1G is a low-power N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. These alternatives also feature low on-resistance and are suitable for similar applications such as switching and amplification in low-power circuits. Always check the datasheets for electrical characteristics to ensure compatibility with your specific requirements.

Features

The MMUN2113LT1G is an integrated circuit designed for high-performance applications. Key features include:
1. Multi-Channel Capability: Supports multiple communication channels, making it suitable for various applications.
2. Low Power Consumption: Optimized for energy efficiency, ensuring minimal power usage in operation.
3. Integrated Components: Combines several functions into a single chip, reducing the need for external components and saving board space.
4. High Frequency Operation: Capable of operating at elevated frequencies, enhancing performance in demanding environments.
5. Versatile Interface Options: Supports multiple protocols, which ensures compatibility with a wide range of devices.
6. Robust Performance: Designed to operate reliably under extreme conditions, ensuring longevity and stability in various applications.
7. Small Package Size: Compact design allows for easy integration into space-constrained applications.
These features make the MMUN2113LT1G suitable for applications in telecommunications, automotive, and industrial sectors.

Pinout

The MMUN2113LT1G is a N-channel MOSFET housed in a SOT-23 package, featuring three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied here turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): This pin is typically connected to ground in low-side switching applications. Current flows out of the source when the MOSFET is activated.
The MMUN2113LT1G is designed for low-voltage applications and can handle a maximum continuous drain current of 3.7A, with a maximum drain-source voltage of 30V. It is widely used in switching applications and amplifier circuits.

Manufacturer

The MMUN2113LT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in energy-efficient electronics and provides a wide range of products, including power management, analog, logic, and discrete devices. The company serves various markets, such as automotive, industrial, cloud computing, and consumer electronics. Its focus on innovation and sustainability positions it as a key player in the semiconductor industry, contributing to advancements in technology while promoting energy efficiency.

Application

The MMUN2113LT1G is a dual-band RF transceiver primarily used in wireless communication applications. It is suitable for IoT devices, smart home technologies, and industrial automation. Common application areas include sensor networks, smart metering, and remote monitoring systems. Additionally, it is employed in consumer electronics, such as wearable devices and smart appliances, where reliable and efficient data transmission is essential. Its low power consumption and compact design make it ideal for battery-operated devices.

Package

The MMUN2113LT1G is packaged in a SOT-23 form factor, which is a small surface-mount package commonly used for transistors and other components.

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