規格
| 屬性 | 價值 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 150mA, 1V |
| Power - Max | 310 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The MMBT4401-7-F is a general-purpose NPN bipolar junction transistor (BJT) commonly used in electronic circuits. It is manufactured by Diodes Incorporated and is designed for amplification and switching applications. Key features of the MMBT4401-7-F include a maximum collector current (Ic) of 600 mA, a maximum collector-emitter voltage (Vce) of 40V, and a power dissipation of 625 mW. The transistor typically comes in a small SOT-23 surface-mount package, making it suitable for compact and densely populated circuit boards.
This transistor is favored for its reliability and efficiency in low to medium power applications. It is widely used in consumer electronics, automotive systems, and industrial equipment for tasks such as signal amplification, switching, and interfacing. The MMBT4401-7-F is valued for its fast switching speed and low saturation voltage, which contribute to lower power loss and improved performance in electronic designs. Its versatility and cost-effectiveness make it a popular choice among engineers and hobbyists alike.
This transistor is favored for its reliability and efficiency in low to medium power applications. It is widely used in consumer electronics, automotive systems, and industrial equipment for tasks such as signal amplification, switching, and interfacing. The MMBT4401-7-F is valued for its fast switching speed and low saturation voltage, which contribute to lower power loss and improved performance in electronic designs. Its versatility and cost-effectiveness make it a popular choice among engineers and hobbyists alike.
Equivalent
The MMBT4401-7-F is an NPN bipolar junction transistor commonly used for switching and amplification. Equivalent products include 2N4401, BC547, BC337, and 2N3904. These transistors share similar characteristics in terms of voltage and current ratings, though specific parameters like gain and packaging might vary. Always check the datasheet to ensure full compatibility with your application.
Features
The MMBT4401-7-F is an NPN bipolar junction transistor (BJT) commonly used for switching and amplification purposes in various electronic circuits. Key features include:
1. Type: NPN Bipolar Junction Transistor.
2. Maximum Collector Current (Ic): 600 mA, allowing it to handle moderate current loads.
3. Maximum Collector-Emitter Voltage (Vceo): 40V, suitable for low to medium voltage applications.
4. Power Dissipation: 350 mW, indicating its ability to manage power loss in the form of heat.
5. DC Current Gain (hFE): Typically between 100 and 300, ensuring efficient amplification.
6. Package: SOT-23, a small surface-mount package that is ideal for compact circuit designs.
7. Transition Frequency (fT): Approximately 300 MHz, which is favorable for high-frequency applications.
8. Temperature Range: Operates effectively within a wide temperature range, ensuring reliability in various environments.
These features make the MMBT4401-7-F suitable for use in a wide range of electronic applications, including signal processing, amplification, and switching tasks.
1. Type: NPN Bipolar Junction Transistor.
2. Maximum Collector Current (Ic): 600 mA, allowing it to handle moderate current loads.
3. Maximum Collector-Emitter Voltage (Vceo): 40V, suitable for low to medium voltage applications.
4. Power Dissipation: 350 mW, indicating its ability to manage power loss in the form of heat.
5. DC Current Gain (hFE): Typically between 100 and 300, ensuring efficient amplification.
6. Package: SOT-23, a small surface-mount package that is ideal for compact circuit designs.
7. Transition Frequency (fT): Approximately 300 MHz, which is favorable for high-frequency applications.
8. Temperature Range: Operates effectively within a wide temperature range, ensuring reliability in various environments.
These features make the MMBT4401-7-F suitable for use in a wide range of electronic applications, including signal processing, amplification, and switching tasks.
Pinout
The MMBT4401-7-F is a NPN bipolar junction transistor (BJT) commonly used in general-purpose amplification and switching applications. It comes in a SOT-23 package and has three pins:
1. Pin 1 - Emitter (E): The emitter is the region where charge carriers (electrons in the case of an NPN transistor) are emitted. It is typically connected to the ground in common-emitter configurations.
2. Pin 2 - Base (B): The base is the control terminal that modulates the conductivity of the transistor. A small current or voltage applied to the base controls a larger current between the collector and emitter.
3. Pin 3 - Collector (C): The collector is the region where charge carriers are collected. It is usually connected to the supply voltage in common-emitter configurations.
The MMBT4401-7-F is known for its high current gain and low saturation voltage, making it suitable for switching and amplification tasks in electronic circuits.
1. Pin 1 - Emitter (E): The emitter is the region where charge carriers (electrons in the case of an NPN transistor) are emitted. It is typically connected to the ground in common-emitter configurations.
2. Pin 2 - Base (B): The base is the control terminal that modulates the conductivity of the transistor. A small current or voltage applied to the base controls a larger current between the collector and emitter.
3. Pin 3 - Collector (C): The collector is the region where charge carriers are collected. It is usually connected to the supply voltage in common-emitter configurations.
The MMBT4401-7-F is known for its high current gain and low saturation voltage, making it suitable for switching and amplification tasks in electronic circuits.
Manufacturer
The MMBT4401-7-F is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of discrete, logic, and analog semiconductor products. The company's offerings are designed to serve a broad range of applications across various markets, including automotive, consumer electronics, computing, communications, and industrial sectors. They focus on providing high-quality, efficient, and cost-effective solutions to meet the needs of their customers.
Application
The MMBT4401-7-F is a general-purpose NPN bipolar junction transistor commonly used in switching and amplification applications. It is suitable for use in low-power, medium-speed switching circuits, and small-signal amplification. Typical application areas include audio amplifiers, signal processing circuits, and as a switch in various digital circuits. Its small SOT-23 package makes it ideal for compact, space-constrained designs, such as those found in consumer electronics, automotive applications, and portable devices. Additionally, the MMBT4401-7-F can be used in voltage regulation circuits and as a driver for smaller loads like relays, LEDs, and other semiconductor devices.
Package
The MMBT4401-7-F is a NPN bipolar junction transistor (BJT) that comes in a SOT-23 package. This small-outline transistor package is suitable for surface-mount applications, offering compactness and efficiency for various electronic circuits.
