規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 200 mA |
| Voltage - Collector Emitter Breakdown(Max) | 15 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff(Max) | 400nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 20 @ 100mA, 1V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The MMBT2369ALT1G is a versatile NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It's commonly used in general-purpose amplifier and switching applications due to its robust performance and reliability. This transistor is part of the SOT-23 package family, making it suitable for surface-mount technology, which is ideal for modern, compact electronic devices.
Key specifications include a collector-emitter voltage (Vceo) of 40V, a collector current (Ic) of 200mA, and a power dissipation of 225mW. The device exhibits a DC current gain (hFE) range of 100 to 300, which ensures efficient amplification capabilities. Additionally, it has a transition frequency of 100MHz, making it suitable for high-frequency applications.
The MMBT2369ALT1G is favored for its fast switching speeds and low noise, making it ideal for RF applications, signal processing, and other high-speed electronic circuits. Its compact form, combined with its electrical characteristics, makes it a reliable component in consumer electronics, automotive, industrial, and communication applications.
Key specifications include a collector-emitter voltage (Vceo) of 40V, a collector current (Ic) of 200mA, and a power dissipation of 225mW. The device exhibits a DC current gain (hFE) range of 100 to 300, which ensures efficient amplification capabilities. Additionally, it has a transition frequency of 100MHz, making it suitable for high-frequency applications.
The MMBT2369ALT1G is favored for its fast switching speeds and low noise, making it ideal for RF applications, signal processing, and other high-speed electronic circuits. Its compact form, combined with its electrical characteristics, makes it a reliable component in consumer electronics, automotive, industrial, and communication applications.
Equivalent
Equivalent products for the MMBT2369ALT1G chip, which is an NPN bipolar junction transistor, include the 2N2369 and its surface-mount versions like the MMBT2369, MMBT2369A, and the PZT2369AT1. These transistors are often used in switching and amplifier applications. Always check the datasheets for specific parameters to ensure compatibility for your application.
Features
The MMBT2369ALT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for switching and amplifier applications. Key features of this device include:
1. Package Type: It is housed in a SOT-23 package, which is a small and surface-mount form factor suitable for compact electronic designs.
2. Electrical Characteristics:
- Collector-Emitter Voltage (Vceo): 40V, indicating the maximum voltage it can handle between the collector and emitter.
- Collector Current (Ic): 200mA, specifying the maximum current it can sustain.
- Power Dissipation: 300 mW, which is the maximum power it can dissipate.
- Transition Frequency (fT): Typically around 100 MHz, indicating its capability for high-frequency applications.
3. Performance:
- It offers high-speed switching performance suitable for digital and analog circuits.
- Comes with a high DC current gain (hFE) making it efficient for amplification purposes.
4. Reliability: It is designed to be robust and reliable under various operating conditions.
These features make it a versatile choice for applications in consumer electronics, communications, and other domains requiring reliable switching and amplification.
1. Package Type: It is housed in a SOT-23 package, which is a small and surface-mount form factor suitable for compact electronic designs.
2. Electrical Characteristics:
- Collector-Emitter Voltage (Vceo): 40V, indicating the maximum voltage it can handle between the collector and emitter.
- Collector Current (Ic): 200mA, specifying the maximum current it can sustain.
- Power Dissipation: 300 mW, which is the maximum power it can dissipate.
- Transition Frequency (fT): Typically around 100 MHz, indicating its capability for high-frequency applications.
3. Performance:
- It offers high-speed switching performance suitable for digital and analog circuits.
- Comes with a high DC current gain (hFE) making it efficient for amplification purposes.
4. Reliability: It is designed to be robust and reliable under various operating conditions.
These features make it a versatile choice for applications in consumer electronics, communications, and other domains requiring reliable switching and amplification.
Pinout
The MMBT2369ALT1G is a surface-mount NPN bipolar junction transistor (BJT). It typically has 3 pins, which serve the following functions:
1. Collector (C): The collector is the terminal through which the majority of the charge carriers leave the transistor. It is usually connected to a voltage supply and is responsible for collecting carriers from the emitter.
2. Base (B): The base is the control terminal of the transistor. A small current or voltage at the base controls the larger current flow between the collector and emitter.
3. Emitter (E): The emitter is the terminal through which charge carriers (electrons for NPN) enter the transistor. It is usually connected to the ground or a lower potential in a circuit setup.
These pins are typically arranged in a standard SOT-23 package, which is common for surface-mount transistors. The MMBT2369ALT1G is often used in amplification and switching applications due to its fast switching speed and moderate current handling capability.
1. Collector (C): The collector is the terminal through which the majority of the charge carriers leave the transistor. It is usually connected to a voltage supply and is responsible for collecting carriers from the emitter.
2. Base (B): The base is the control terminal of the transistor. A small current or voltage at the base controls the larger current flow between the collector and emitter.
3. Emitter (E): The emitter is the terminal through which charge carriers (electrons for NPN) enter the transistor. It is usually connected to the ground or a lower potential in a circuit setup.
These pins are typically arranged in a standard SOT-23 package, which is common for surface-mount transistors. The MMBT2369ALT1G is often used in amplification and switching applications due to its fast switching speed and moderate current handling capability.
Manufacturer
The MMBT2369ALT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor manufacturing company that focuses on intelligent technology solutions. Their products are used in various sectors, including automotive, communications, computing, consumer electronics, industrial, medical, and aerospace/defense. The company specializes in energy-efficient innovations, offering a wide range of products such as power management devices, sensors, logic, timing, connectivity, and discrete components.
Application
The MMBT2369ALT1G is a general-purpose NPN bipolar junction transistor commonly used in amplification and switching applications. It is often found in signal amplification, low-power switching, and digital circuit applications. Its fast switching speed makes it suitable for use in RF circuits and pulse generation. Additionally, it can be employed in hobby electronics projects and educational purposes for demonstrating basic transistor operations. Its small size and surface-mount packaging make it ideal for compact electronic designs, including consumer electronics, communication equipment, and automotive applications.
Package
The MMBT2369ALT1G is a NPN bipolar junction transistor that comes in a SOT-23 package. This surface-mount package type is compact and commonly used for small-signal applications in electronics.
