M29W400DT55N6E

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M29W400DT55N6E

+物料清單

IC FLASH 4MBIT PARALLEL 48TSOP

  • 製造商美光科技股份有限公司。

  • 製造商部分 #M29W400DT55N6E

  • 包裹 TFSOP-48

  • 有存貨7204

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正品保證

規格

屬性 價值
Package / Case Tray
Part Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 4Mb (512K x 8, 256K x 16)
Memory Interface Parallel
Write Cycle Time - Word Page 55ns
Access Time 55 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

概述

Description

The M29W400DT55N6E is a 4 Megabit (512 Kb x 8 or 256 Kb x 16) non-volatile flash memory device that is part of the M29W400D series. It features a versatile, high-performance interface suitable for various embedded applications. The device operates on a single 2.7V to 3.6V power supply, making it energy-efficient. It supports both x8 and x16 data bus configurations, allowing flexibility in application design.
One of the key features of the M29W400DT55N6E is its ability to perform read, program, and erase operations. The memory is organized with boot sectors, where one sector is hardware-protected to guard the system code in critical environments. The device also comes with a fast program and erase time, enhancing operational efficiency.
The M29W400DT55N6E is designed for reliability and endurance, with features like automatic error correction and sector lock/unlock functionality. Its compact TSOP (Thin Small Outline Package) form factor ensures it can be integrated into space-constrained applications, making it an ideal choice for consumer electronics, automotive systems, and industrial instruments.

Equivalent

The M29W400DT55N6E is a 4 Mbit (512Kb x8 or 256Kb x16) Flash memory chip. Equivalent products would include Flash memory chips with similar specifications like the SST39VF040B from Microchip, AT49BV/LV040 from Atmel, or S29AL004D from Cypress Semiconductor. These products should have similar memory sizes, voltage ranges, and package types, making them suitable substitutes in compatible applications. Always verify specifications to ensure compatibility with your specific requirements.

Features

The M29W400DT55N6E is a 4 Mbit (512 Kb x 8 or 256 Kb x 16) Flash memory device. It is part of the M29 series, designed for embedded applications requiring reliable non-volatile storage. Key features include:
1. Architecture: Organized as 8 uniform sectors of 64 Kb each, allowing for flexible memory management.

2. Interface: Supports both 8-bit and 16-bit data bus configurations.
3. Performance: Operates at a 55 ns access time, providing fast read capabilities for high-speed applications.
4. Supply Voltage: Functions within a single 2.7 V to 3.6 V voltage range, making it suitable for battery-powered devices.
5. Programming and Erase: Features sector erase and byte or word programming capabilities, with an embedded program/erase algorithm for automated operations.
6. Endurance and Data Retention: Offers high endurance with a typical 100,000 program/erase cycles per sector and data retention of 20 years.
7. Package: Available in a TSOP-48 package, allowing for compact and robust PCB designs.
These features make the M29W400DT55N6E well-suited for various applications, including embedded systems, automotive, and industrial control systems.

Pinout

The M29W400DT55N6E is a 4 Megabit (512 Kb x 8 or 256 Kb x 16) Flash memory device from Micron Technology. It features 48 pins and is organized in a TSOP (Thin Small Outline Package).
Key Functions:
1. Memory Array Organization: The device can be configured in two modes: x8 (8-bit) or x16 (16-bit).
2. Block Architecture: It has uniform 64 Kbyte blocks for flexible memory management.
3. Read/Write Operations: Supports standard read and write operations with a fast access time of 55 ns.
4. Erase Capabilities: Features sector erase and bulk erase operations.
5. Programming: Byte and word programming capabilities with status register monitoring.
6. Data Protection: Includes hardware data protection measures.
7. Low Power Consumption: Designed for low-power operations suitable for battery-powered devices.
8. Reset/Chip Enable Functions: Incorporates a reset pin for standby mode and a chip enable for device activation.
This device is suitable for applications requiring non-volatile storage with flexible block management and efficient access times.

Manufacturer

The M29W400DT55N6E is a flash memory product manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of products, including microcontrollers, sensors, power management devices, and analog devices, among others. The company serves various markets such as automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for its innovation and technological expertise in the semiconductor industry.

Application

The M29W400DT55N6E is a 4 Mbit (512Kb x8 or 256Kb x16) Flash memory chip used in various applications. Its primary application areas include:
1. Embedded Systems: It is used in microcontrollers for storing firmware and system programs.
2. Consumer Electronics: Employed in devices like digital cameras, gaming consoles, and set-top boxes for data storage and retrieval.
3. Automotive: Utilized in infotainment systems, engine control units, and other vehicle electronics for reliable data storage.
4. Industrial: Used in PLCs and industrial control systems for program storage.
5. Networking Equipment: Applied in routers, switches, and modems for configuration and firmware storage.
These applications benefit from its non-volatile nature, allowing data retention without power.

Package

The M29W400DT55N6E is a 4 Megabit (512Kb x 8 or 256Kb x 16) boot block sector Flash memory. It is typically available in a TSOP (Thin Small Outline Package) package type, specifically a 48-pin TSOP. This package is designed for surface mounting on circuit boards.

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