K4AAG165WB-MCTD

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K4AAG165WB-MCTD

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1.2V 16Gbit 1Gx16 DDR4 FBGA-96 Memory (ICs) RoHS

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正品保證

規格

屬性 價值
Packaging FBGA-96
Interface DDR4
Memory Format 1Gx16
Memory Size 16Gbit
Operating Temperature 0℃~+85℃
Voltage - Supply 1.2V

概述

Description

The K4AAG165WB-MCTD is a 16Gb (2GB) DDR4 SDRAM module from Samsung, designed for high-performance computing. Key features:
- Density & Speed: 16Gb capacity, operates at 3200 Mbps (DDR4-3200).
- Voltage: Low-power 1.2V standard.
- Configuration: Organized as 2G x 8 (2 billion rows, 8-bit columns).
- Applications: Used in servers, data centers, and enterprise systems requiring reliability and speed.
- Advanced Tech: Supports ECC (Error Correction Code) for data integrity.
This module ensures high bandwidth, low latency, and energy efficiency, making it ideal for demanding workloads.
*(Exact specs may vary; refer to Samsung’s datasheet for details.)*

Equivalent

The K4AAG165WB-MCTD is a DDR4 SDRAM chip from Samsung. Equivalent products include:
- SK Hynix: H5ANAG6NCMR
- Micron: MT40A1G16RC
- Nanya: NT6AG512M8
These are 16Gb (2GB) DDR4 chips with similar specs (speed, density, voltage). Always verify datasheets for exact compatibility.

Features

The K4AAG165WB-MCTD is a DDR4 SDRAM module with the following key features:
- Capacity: 16Gb (Gigabit)
- Organization: 2G x 8 (2 Gigabit x 8 banks)
- Speed: 2666 Mbps (DDR4-2666)
- Voltage: 1.2V (standard DDR4)
- Package: 78-ball FBGA (Fine-pitch Ball Grid Array)
- Interface: 8-bit prefetch, double data rate
- Timings: CAS Latency (CL) varies (e.g., CL15-17)
- Operating Temp: Commercial (0°C to 95°C) or industrial (-40°C to 95°C)
- Applications: Servers, networking, embedded systems
This chip is designed for high-speed, low-power memory applications, offering reliability and scalability for modern computing needs.

Pinout

The K4AAG165WB-MCTD is a 16Gb (2GB) DDR4 SDRAM chip from Samsung.
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array)
- Key Functions:
- Power Supply: Operates at 1.2V (VDD/VDDQ)
- Speed: Supports DDR4-3200 (1600 MHz clock)
- Organization: x16 (16-bit data bus)
- Density: 2G x 8 (16Gb total)
- Features: On-die termination (ODT), programmable CAS latency, auto-refresh, and low-power modes.
This chip is commonly used in servers, networking, and high-performance computing applications.

Package

The K4AAG165WB-MCTD is a DDR4 SDRAM chip in a FBGA (Fine-Pitch Ball Grid Array) package. It features a 96-ball configuration and is commonly used in high-speed memory applications. The package type ensures compact size and reliable performance for embedded systems and computing devices.

Frequently Asked Questions


Q: What is the memory density and organization of the K4AAG165WB-MCTD?
A: It is a 16Gbit DDR4 SDRAM organized as 1G x 16 bits, suitable for high-density memory applications.


Q: What is the operating temperature range for this Samsung memory IC?
A: The device operates from 0°C to +85°C, making it suitable for commercial and industrial temperature environments.


Q: What supply voltage does the K4AAG165WB-MCTD require?
A: It requires a standard DDR4 supply voltage of 1.2V, ensuring low power consumption and compatibility with modern processors.


Q: What is the package type for this component?
A: It comes in an FBGA-96 package, which is a standard fine-pitch ball grid array for DDR4 memory modules.


Q: Can this memory IC be used in high-speed data processing applications?
A: Yes, as a DDR4 device with 1.2V operation, it supports high-speed data transfer rates suited for servers, networking, and embedded systems.


Q: Is this component designed for surface mount assembly?
A: Yes, the FBGA-96 package is a surface-mount technology (SMT) package, ideal for automated PCB assembly processes.


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