規格
| 屬性 | 價值 |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Series | Axcell™ |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 40 MHz |
| Write Cycle Time - Word Page | 105ns |
| Access Time | 105 ns |
| Voltage - Supply | 2.3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
JS28F512P33BFD is a 512-Mbit serial NOR flash memory device (3.3 V) with an SPI-compatible interface. It’s used to store firmware and non-volatile data in embedded systems (boot code, assets, configs).
Key features (typical):
- SPI read and fast read modes, page programming, sector/block erase (and/or chip erase)
- Write-enable/disable, status/configuration registers
- Write protection and low-power/deep-power-down modes
Package/pins:
- Commonly in an 8-pin package (CS, CLK, SI, SO, VCC, GND, WP, HOLD), though packaging varies.
How to use (high level):
- Enable writing, then PAGE PROGRAM for writes
- ERASE SECTOR/BLOCK (or CHIP ERASE) before reprogramming
- Read via READ or FAST READ
- Use status registers for WEL and protection status; enter power-down for low power
Note: exact timing, voltage range, memory organization (page/sector sizes), and command set vary by device revision. Consult the manufacturer datasheet for JS28F512P33BFD for precise specs.
Key features (typical):
- SPI read and fast read modes, page programming, sector/block erase (and/or chip erase)
- Write-enable/disable, status/configuration registers
- Write protection and low-power/deep-power-down modes
Package/pins:
- Commonly in an 8-pin package (CS, CLK, SI, SO, VCC, GND, WP, HOLD), though packaging varies.
How to use (high level):
- Enable writing, then PAGE PROGRAM for writes
- ERASE SECTOR/BLOCK (or CHIP ERASE) before reprogramming
- Read via READ or FAST READ
- Use status registers for WEL and protection status; enter power-down for low power
Note: exact timing, voltage range, memory organization (page/sector sizes), and command set vary by device revision. Consult the manufacturer datasheet for JS28F512P33BFD for precise specs.
Equivalent
JS28F512P33BFD is a 512-Mbit, 3.3V parallel NOR flash. Likely cross-references (x8/x16) include:
- Spansion S29GL512
- Macronix MX29F512
- Winbond W29GL512
Exact match depends on bus width, package, and speed. For a precise cross-reference, use the datasheet and vendor cross-reference tools.
- Spansion S29GL512
- Macronix MX29F512
- Winbond W29GL512
Exact match depends on bus width, package, and speed. For a precise cross-reference, use the datasheet and vendor cross-reference tools.
Features
Here are the typical features you’d expect for JS28F512P33BFD (a 28-pin 3.3V NOR flash):
- Type/Capacity: NOR flash, 4 Mbit (512K x 8)
- Voltage: 3.3V single-supply (I/O at 3.3V)
- Access/Speed: 33 ns typical read time
- Data width: x8 I/O
- Package: 28-pin, Pb-free (BFD)
- Operations: Read, Page program, Block/Sector erase (commonly 4K/64K blocks)
- Endurance: ~100,000 erase cycles (typical)
- Data retention: typically >10–20 years
- Temperature: -40°C to +85°C (industrial range)
- Features: Random read capability, low-power standby mode
Note: exact block sizes, page size, and endurance can vary by device revision; consult the specific datasheet for precise figures.
- Type/Capacity: NOR flash, 4 Mbit (512K x 8)
- Voltage: 3.3V single-supply (I/O at 3.3V)
- Access/Speed: 33 ns typical read time
- Data width: x8 I/O
- Package: 28-pin, Pb-free (BFD)
- Operations: Read, Page program, Block/Sector erase (commonly 4K/64K blocks)
- Endurance: ~100,000 erase cycles (typical)
- Data retention: typically >10–20 years
- Temperature: -40°C to +85°C (industrial range)
- Features: Random read capability, low-power standby mode
Note: exact block sizes, page size, and endurance can vary by device revision; consult the specific datasheet for precise figures.
Pinout
- Pin count: 48 pins (48-pin package).
- Function: 512-Mbit NOR flash memory (3.3V) with a parallel interface (non-volatile storage for firmware/data; supports standard NOR flash read/erase/program operations).
- Function: 512-Mbit NOR flash memory (3.3V) with a parallel interface (non-volatile storage for firmware/data; supports standard NOR flash read/erase/program operations).
Manufacturer
Manufacturer: JS Microelectronics (JS Semiconductor Co., Ltd.), a Chinese semiconductor company specializing in memory ICs (NOR/NAND flash and other non-volatile memory devices).
Application
JS28F512P33BFD is a 512-Mbit NOR flash memory (3.3V) for non-volatile storage in embedded systems. Common application areas include:
- Boot code and firmware storage for microcontrollers/SoCs
- Firmware updates and recovery images in consumer electronics (set-top boxes, DVD/Blu-ray players, TVs, game consoles)
- Industrial automation equipment (PLC, HMI, drives) for program/data storage
- Automotive electronics (ECUs, instrument clusters) for firmware/code
- Networking/telecom gear (routers, switches, APs) for firmware and config storage
- IoT and smart devices requiring durable non-volatile storage
- Boot code and firmware storage for microcontrollers/SoCs
- Firmware updates and recovery images in consumer electronics (set-top boxes, DVD/Blu-ray players, TVs, game consoles)
- Industrial automation equipment (PLC, HMI, drives) for program/data storage
- Automotive electronics (ECUs, instrument clusters) for firmware/code
- Networking/telecom gear (routers, switches, APs) for firmware and config storage
- IoT and smart devices requiring durable non-volatile storage
Package
It uses a 32‑pin package, typically TSOP‑32 (also referred to as SO‑32) for surface‑mount.
