規格
| 屬性 | 價值 |
| Supplier | NXP USA Inc. |
| Package / Case | Tape & Box (TB) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Voltage - Breakdown(V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain(Idss) @ Vds(Vgs=0) | 2 mA @ 15 V |
| Voltage - Cutoff(VG Soff) @ Id | 1 V @ 10 nA |
| Input Capacitance(Ciss)(Max) @ Vds | 8pF @ 10V (VGS) |
| Rds On | 250 Ohms |
| Power - Max | 400 mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
