IXTQ34N65X2M

圖片僅供參考

IXTQ34N65X2M

+物料清單

DISCRETE MOSFET 34A 650V X2 TO3P

  • 製造商IXYS公司

  • 製造商部分 #IXTQ34N65X2M

  • 有存貨4833

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier IXYS
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 34A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 96mOhm @ 17A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 54 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P

與IXTQ34N65X2M相關的產品