IXTH6N100D2

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IXTH6N100D2

+物料清單

MOSFET N-CH 1000V 6A TO247

  • 製造商IXYS公司

  • 製造商部分 #IXTH6N100D2

  • 有存貨9047

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正品保證

規格

屬性 價值
Supplier IXYS
Package / Case Tube
Series Depletion
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 6A (Tc)
Rds On(Max) @ Id Vgs 2.2Ohm @ 3A, 0V
Gate Charge(Qg)(Max) @ Vgs 95 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2650 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)

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