IXTA3N120HV

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IXTA3N120HV

+物料清單

MOSFET N-CH 1200V 3A TO263

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7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier IXYS
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 4.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 42 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1100 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV

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