IXTA2R4N120P

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IXTA2R4N120P

+物料清單

MOSFET N-CH 1200V 2.4A TO263

  • 製造商IXYS公司

  • 製造商部分 #IXTA2R4N120P

  • 有存貨5121

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正品保證

規格

屬性 價值
Supplier IXYS
Package / Case Tube
Series Polar
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 2.4A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 4.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 37 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1207 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA

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