規格
| 屬性 | 價值 |
| Package | Tube |
| ProductStatus | Active |
| IGBTType | NPT |
| Voltage-CollectorEmitterBreakdown(Max) | 1700 V |
| Current-Collector(Ic)(Max) | 10 A |
| Current-CollectorPulsed(Icm) | 20 A |
| Vce(on)(Max)@VgeIc | 6V @ 15V, 5A |
| Power-Max | 140 W |
| SwitchingEnergy | 380µJ (off) |
| InputType | Standard |
| GateCharge | 29 nC |
| Td(on/off)@25°C | 46ns/190ns |
| TestCondition | 850V, 10A, 22Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
概述
Description
The IXGT10N170A is a high-voltage, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient and reliable switching. Manufactured by IXYS, this device is part of their advanced power MOSFET series. It features a drain-source voltage (V_DS) of 1700V and a continuous drain current (I_D) of 10A, making it suitable for high-power and high-voltage applications.
The IXGT10N170A is designed with a robust construction that ensures low on-resistance and minimal gate charge, contributing to improved energy efficiency and reduced power losses. It is often used in power converters, inverters, and high-frequency power supplies. The MOSFET also includes avalanche energy capability, which enhances its reliability under over-voltage conditions.
The package design typically provides good thermal performance, allowing for effective heat dissipation. This component is widely used in industrial and commercial applications that require high reliability and efficiency. Its high voltage capability makes it ideal for use in situations where standard MOSFETs may not suffice.
The IXGT10N170A is designed with a robust construction that ensures low on-resistance and minimal gate charge, contributing to improved energy efficiency and reduced power losses. It is often used in power converters, inverters, and high-frequency power supplies. The MOSFET also includes avalanche energy capability, which enhances its reliability under over-voltage conditions.
The package design typically provides good thermal performance, allowing for effective heat dissipation. This component is widely used in industrial and commercial applications that require high reliability and efficiency. Its high voltage capability makes it ideal for use in situations where standard MOSFETs may not suffice.
Equivalent
The IXGT10N170A is an IGBT (Insulated Gate Bipolar Transistor) chip. Equivalent products can include similar IGBTs with comparable voltage, current ratings, and package type. Potential equivalents might be:
1. STMicroelectronics STGW20NC60VD
2. Infineon IKW15N120H3
3. ON Semiconductor FGL40N120AND
When selecting equivalents, ensure the specifications closely match your application's requirements, such as voltage, current ratings, switching speed, and thermal characteristics. Always verify with datasheets and consider manufacturer recommendations.
1. STMicroelectronics STGW20NC60VD
2. Infineon IKW15N120H3
3. ON Semiconductor FGL40N120AND
When selecting equivalents, ensure the specifications closely match your application's requirements, such as voltage, current ratings, switching speed, and thermal characteristics. Always verify with datasheets and consider manufacturer recommendations.
Features
The IXGT10N170A is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power switching applications. Here are its key features:
1. Voltage and Current Rating: It typically supports a collector-emitter voltage (V_CE) of 1700V and a continuous collector current (I_C) of around 10A.
2. Switching Speed: Offers fast switching capabilities, making it suitable for high-frequency applications.
3. Low Conduction Losses: Designed to minimize conduction losses, enhancing efficiency in power applications.
4. Rugged Design: Built to withstand harsh electrical conditions, providing reliability in demanding environments.
5. Short-Circuit Withstand Capability: Features the ability to handle short circuits for a brief period, contributing to its robustness.
6. Thermal Performance: Equipped with good thermal characteristics to manage heat dissipation effectively.
7. Applications: Commonly used in inverters, motor drives, and power supply circuits requiring high voltage and moderate current handling.
These features make the IXGT10N170A a reliable choice for high-power, high-voltage electronic systems.
1. Voltage and Current Rating: It typically supports a collector-emitter voltage (V_CE) of 1700V and a continuous collector current (I_C) of around 10A.
2. Switching Speed: Offers fast switching capabilities, making it suitable for high-frequency applications.
3. Low Conduction Losses: Designed to minimize conduction losses, enhancing efficiency in power applications.
4. Rugged Design: Built to withstand harsh electrical conditions, providing reliability in demanding environments.
5. Short-Circuit Withstand Capability: Features the ability to handle short circuits for a brief period, contributing to its robustness.
6. Thermal Performance: Equipped with good thermal characteristics to manage heat dissipation effectively.
7. Applications: Commonly used in inverters, motor drives, and power supply circuits requiring high voltage and moderate current handling.
These features make the IXGT10N170A a reliable choice for high-power, high-voltage electronic systems.
Pinout
The IXGT10N170A is a high-voltage N-channel MOSFET. It typically comes in a TO-247 package, which generally has 3 pins. The pin functions for this MOSFET are as follows:
1. Gate (G): This pin is used to control the flow of current between the drain and source. Applying a voltage to the gate modulates the conductivity of the device.
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal where the current exits the MOSFET.
These pins enable the MOSFET to function as a switch or amplifier in various electronic circuits. The IXGT10N170A is designed for high-voltage applications, with a breakdown voltage capability of up to 1700 volts, making it suitable for use in power supply circuits and similar high-voltage applications.
1. Gate (G): This pin is used to control the flow of current between the drain and source. Applying a voltage to the gate modulates the conductivity of the device.
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal where the current exits the MOSFET.
These pins enable the MOSFET to function as a switch or amplifier in various electronic circuits. The IXGT10N170A is designed for high-voltage applications, with a breakdown voltage capability of up to 1700 volts, making it suitable for use in power supply circuits and similar high-voltage applications.
Manufacturer
The IXGT10N170A is manufactured by IXYS Corporation. IXYS Corporation, founded in 1983, is a company that specializes in power semiconductors and integrated circuits. They focus on producing a wide range of power management products, such as MOSFETs, IGBTs, and diodes, as well as microcontrollers and other ICs for applications in power management and energy efficiency. IXYS serves industries including telecommunications, automotive, industrial, and renewable energy. In 2018, IXYS was acquired by Littelfuse, Inc., further expanding its reach in the electronics industry.
Application
The IXGT10N170A is an IGBT (Insulated Gate Bipolar Transistor) designed for high-voltage and high-power applications. It is commonly used in:
1. Power Inverters: Converts DC to AC power, suitable for renewable energy systems like solar or wind.
2. Motor Drives: Controls and drives various types of motors in industrial and automotive applications.
3. Switch-Mode Power Supplies (SMPS): Enhances efficiency in converting electrical power.
4. Uninterruptible Power Supplies (UPS): Ensures power continuity in critical systems.
5. Induction Heating: Used in systems that require high-frequency power conversion.
6. Welders and Plasma Cutters: Suitable for industrial equipment requiring efficient power control.
These applications leverage the IGBT's ability to handle high voltages and currents efficiently.
1. Power Inverters: Converts DC to AC power, suitable for renewable energy systems like solar or wind.
2. Motor Drives: Controls and drives various types of motors in industrial and automotive applications.
3. Switch-Mode Power Supplies (SMPS): Enhances efficiency in converting electrical power.
4. Uninterruptible Power Supplies (UPS): Ensures power continuity in critical systems.
5. Induction Heating: Used in systems that require high-frequency power conversion.
6. Welders and Plasma Cutters: Suitable for industrial equipment requiring efficient power control.
These applications leverage the IGBT's ability to handle high voltages and currents efficiently.
Package
The IXGT10N170A is an insulated-gate bipolar transistor (IGBT) that typically comes in a TO-247 package type. This packaging is designed to handle high power applications and provides efficient thermal management.
