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IXFK27N80Q
+物料清單MOSFET N-CH 800V 27A TO264AA
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製造商IXYS公司
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製造商部分 #IXFK27N80Q
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有存貨2199
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規格
| 屬性 | 價值 |
| Series | HiPerFET™, Q Class |
| Part Status | Active |
| Base Product Number | IXFK27 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V |
| Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA (IXFK) |
| Package | TO-264-3, TO-264AA |
| Packaging | Tube |
概述
Description
The IXFK27N80Q is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a voltage rating of 800 volts and a continuous drain current of 27 amperes, making it suitable for various switching applications, such as power supplies, motor drives, and inverters.
Key specifications include a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency during operation. The device offers fast switching speeds, enhancing performance in high-frequency applications.
The IXFK27N80Q is packaged in a TO-220 form factor, allowing for effective heat dissipation and easy mounting on heat sinks. This MOSFET is particularly favored in designs requiring high reliability and thermal performance.
Overall, the IXFK27N80Q is ideal for engineers looking for robust solutions in high-voltage, high-current applications, combining efficiency with reliable performance.
Key specifications include a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency during operation. The device offers fast switching speeds, enhancing performance in high-frequency applications.
The IXFK27N80Q is packaged in a TO-220 form factor, allowing for effective heat dissipation and easy mounting on heat sinks. This MOSFET is particularly favored in designs requiring high reliability and thermal performance.
Overall, the IXFK27N80Q is ideal for engineers looking for robust solutions in high-voltage, high-current applications, combining efficiency with reliable performance.
Equivalent
Equivalent products for the IXFK27N80Q MOSFET include the STP27NM80, IRF2807, and FQP27N80C. Always verify specifications such as voltage, current ratings, and gate threshold voltage to ensure compatibility in your specific application.
Features
The IXFK27N80Q is a N-channel MOSFET designed for high voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: The device supports a continuous drain current (ID) of 27A, allowing for robust performance in power applications.
3. RDS(on): It boasts a low on-resistance of approximately 0.14 ohms, reducing power losses and improving efficiency during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling easier drive in various circuits.
5. Package: Typically available in TO-220 or similar packages, ensuring good thermal performance and ease of mounting.
6. Applications: Ideal for use in switch-mode power supplies, motor drives, and other high-frequency applications.
These features make the IXFK27N80Q a versatile choice for designers looking for reliable switching components in demanding environments.
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: The device supports a continuous drain current (ID) of 27A, allowing for robust performance in power applications.
3. RDS(on): It boasts a low on-resistance of approximately 0.14 ohms, reducing power losses and improving efficiency during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling easier drive in various circuits.
5. Package: Typically available in TO-220 or similar packages, ensuring good thermal performance and ease of mounting.
6. Applications: Ideal for use in switch-mode power supplies, motor drives, and other high-frequency applications.
These features make the IXFK27N80Q a versatile choice for designers looking for reliable switching components in demanding environments.
Pinout
The IXFK27N80Q is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on, allowing current to flow between the drain and source.
2. Source (S): This pin is connected to the lower potential side of the circuit, typically ground. It serves as the output terminal for the current flow when the MOSFET is activated.
3. Drain (D): This pin is connected to the higher potential side of the circuit. Current flows from the drain to the source when the MOSFET is on.
4. Substrate (B): This pin is internally connected to the source and is usually not used in typical applications. It helps in device stability.
The IXFK27N80Q is rated for high voltage applications, with a maximum drain-source voltage of 800V and a continuous drain current of 27A.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on, allowing current to flow between the drain and source.
2. Source (S): This pin is connected to the lower potential side of the circuit, typically ground. It serves as the output terminal for the current flow when the MOSFET is activated.
3. Drain (D): This pin is connected to the higher potential side of the circuit. Current flows from the drain to the source when the MOSFET is on.
4. Substrate (B): This pin is internally connected to the source and is usually not used in typical applications. It helps in device stability.
The IXFK27N80Q is rated for high voltage applications, with a maximum drain-source voltage of 800V and a continuous drain current of 27A.
Manufacturer
The IXFK27N80Q is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon, headquartered in Neubiberg, Germany, specializes in power semiconductors, automotive electronics, and security technologies. The company serves various sectors, including automotive, industrial, and consumer electronics, focusing on high-efficiency and reliable components for their applications.
Infineon’s product portfolio includes a wide range of products such as power MOSFETs, IGBTs, microcontrollers, and sensors. The IXFK27N80Q is a N-channel MOSFET designed for high voltage applications, featuring low on-resistance and high switching speeds, making it suitable for power management and conversion systems.
Infineon is recognized for its commitment to innovation and sustainability, emphasizing energy efficiency in its product development. The company plays a crucial role in advancing technologies that support the transition to a cleaner and more connected world.
Infineon’s product portfolio includes a wide range of products such as power MOSFETs, IGBTs, microcontrollers, and sensors. The IXFK27N80Q is a N-channel MOSFET designed for high voltage applications, featuring low on-resistance and high switching speeds, making it suitable for power management and conversion systems.
Infineon is recognized for its commitment to innovation and sustainability, emphasizing energy efficiency in its product development. The company plays a crucial role in advancing technologies that support the transition to a cleaner and more connected world.
Application
The IXFK27N80Q is a high-voltage, N-channel MOSFET commonly used in various applications, including:
1. Switching Power Supplies: Efficiently handle high voltages and currents.
2. Motor Control: Used in DC and AC motor drives for efficient power management.
3. Inverters: Employed in solar inverters and UPS systems for energy conversion.
4. Industrial Equipment: Utilized in power tools and automation systems.
5. LED Drivers: Control high-power LED lighting systems.
6. Consumer Electronics: Found in devices requiring efficient power switching.
Its high voltage rating and low on-resistance make it suitable for demanding applications.
1. Switching Power Supplies: Efficiently handle high voltages and currents.
2. Motor Control: Used in DC and AC motor drives for efficient power management.
3. Inverters: Employed in solar inverters and UPS systems for energy conversion.
4. Industrial Equipment: Utilized in power tools and automation systems.
5. LED Drivers: Control high-power LED lighting systems.
6. Consumer Electronics: Found in devices requiring efficient power switching.
Its high voltage rating and low on-resistance make it suitable for demanding applications.
Package
The IXFK27N80Q is packaged in a TO-247 format. This package type is designed for high-power applications, offering efficient thermal performance and robust electrical characteristics.
