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IXFK120N65X2
+物料清單MOSFET N-CH 650V 120A TO264
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製造商IXYS公司
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製造商部分 #IXFK120N65X2
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有存貨9918
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規格
| 屬性 | 價值 |
| Series | HiPerFET™, Ultra X2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 15500 pF @ 25 V |
| Power Dissipation (Max) | 1250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA |
| Package / Case | TO-264-3, TO-264AA |
| Base Product Number | IXFK120 |
概述
Description
The IXFK120N65X2 is a high-performance N-channel MOSFET designed for applications requiring efficient power management, commonly used in industrial and automotive sectors. It features a voltage rating of 650V and a continuous drain current of 120A, making it suitable for high-voltage and high-current applications.
Key characteristics include low on-resistance (R_DS(on)), which minimizes power losses during operation, and fast switching speeds that enhance overall system efficiency. The device is housed in a robust package that ensures reliable thermal performance, further supporting its use in demanding environments.
The IXFK120N65X2 is ideal for applications like inverters, converters, and motor drives, where efficiency and thermal management are critical. It also offers excellent gate drive characteristics, simplifying circuit design and improving system performance. Overall, this MOSFET is a reliable choice for engineers seeking to enhance power systems and improve energy efficiency.
Key characteristics include low on-resistance (R_DS(on)), which minimizes power losses during operation, and fast switching speeds that enhance overall system efficiency. The device is housed in a robust package that ensures reliable thermal performance, further supporting its use in demanding environments.
The IXFK120N65X2 is ideal for applications like inverters, converters, and motor drives, where efficiency and thermal management are critical. It also offers excellent gate drive characteristics, simplifying circuit design and improving system performance. Overall, this MOSFET is a reliable choice for engineers seeking to enhance power systems and improve energy efficiency.
Equivalent
Equivalent products to the IXFK120N65X2 include the Infineon IKW120N65T2, STMicroelectronics STP120N65M5, and ON Semiconductor NTP120N65. These devices are similar in specifications, including voltage ratings and current handling capabilities. Always verify the exact electrical characteristics and package compatibility before substituting.
Features
The IXFK120N65X2 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Up to 650V, making it suitable for high-voltage applications.
2. Current Rating: Maximum continuous drain current of 120A, allowing for robust performance in demanding environments.
3. RDS(on): Low on-resistance (typically around 0.08 ohms), which minimizes conduction losses and enhances efficiency.
4. Gate Charge: Low gate charge (Qg), facilitating faster switching speeds and reduced drive power requirements.
5. Thermal Performance: Designed with a high thermal conductivity package to efficiently dissipate heat, ensuring reliability under varying load conditions.
6. Packaging: Available in TO-220 or similar packages, facilitating easy mounting and heat management.
7. Applications: Ideal for DC-DC converters, inverters, and various power management systems.
These features make the IXFK120N65X2 a suitable choice for engineers seeking efficient, high-voltage solutions in power electronics.
1. Voltage Rating: Up to 650V, making it suitable for high-voltage applications.
2. Current Rating: Maximum continuous drain current of 120A, allowing for robust performance in demanding environments.
3. RDS(on): Low on-resistance (typically around 0.08 ohms), which minimizes conduction losses and enhances efficiency.
4. Gate Charge: Low gate charge (Qg), facilitating faster switching speeds and reduced drive power requirements.
5. Thermal Performance: Designed with a high thermal conductivity package to efficiently dissipate heat, ensuring reliability under varying load conditions.
6. Packaging: Available in TO-220 or similar packages, facilitating easy mounting and heat management.
7. Applications: Ideal for DC-DC converters, inverters, and various power management systems.
These features make the IXFK120N65X2 a suitable choice for engineers seeking efficient, high-voltage solutions in power electronics.
Pinout
The IXFK120N65X2 is a high-power N-channel MOSFET designed for use in various applications, including power supplies and motor drives. It features a total of 4 pins.
The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in a typical application. It serves as the reference point for the gate voltage.
4. Body Diode: While not a separate pin, the IXFK120N65X2 has an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when the device is off.
This MOSFET is noted for its high voltage and current handling capabilities, making it suitable for demanding power applications.
The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in a typical application. It serves as the reference point for the gate voltage.
4. Body Diode: While not a separate pin, the IXFK120N65X2 has an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when the device is off.
This MOSFET is noted for its high voltage and current handling capabilities, making it suitable for demanding power applications.
Manufacturer
The IXFK120N65X2 is manufactured by IXYS Corporation, which is a part of the Littelfuse family. IXYS specializes in power semiconductors and integrated circuits, focusing on solutions for applications in power management, analog, and digital electronics. The company is known for its high-performance products, including MOSFETs, IGBTs, and diodes, serving markets such as renewable energy, industrial automation, automotive, and consumer electronics.
IXYS was founded in 1983 and has established a strong reputation for innovation and quality in the semiconductor industry. The IXFK120N65X2 is a 120A, 650V N-channel MOSFET, designed for high-efficiency applications and capable of handling high power levels. It is often utilized in various applications such as motor drives, power supplies, and inverters, reflecting the company's commitment to providing advanced semiconductor solutions.
IXYS was founded in 1983 and has established a strong reputation for innovation and quality in the semiconductor industry. The IXFK120N65X2 is a 120A, 650V N-channel MOSFET, designed for high-efficiency applications and capable of handling high power levels. It is often utilized in various applications such as motor drives, power supplies, and inverters, reflecting the company's commitment to providing advanced semiconductor solutions.
Application
The IXFK120N65X2 is a high-voltage N-channel MOSFET typically used in various applications, including:
1. Power Supplies: In switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Inverters and motor control applications for efficient operation of electric motors.
3. Induction Heating: Used in resonant circuits for induction heating systems.
4. Renewable Energy: In photovoltaic systems for solar inverters.
5. Industrial Equipment: In power management systems and industrial automation.
Its high voltage and low on-resistance make it suitable for demanding applications requiring efficiency and reliability.
1. Power Supplies: In switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Inverters and motor control applications for efficient operation of electric motors.
3. Induction Heating: Used in resonant circuits for induction heating systems.
4. Renewable Energy: In photovoltaic systems for solar inverters.
5. Industrial Equipment: In power management systems and industrial automation.
Its high voltage and low on-resistance make it suitable for demanding applications requiring efficiency and reliability.
Package
The IXFK120N65X2 is typically packaged in a TO-247 format, which is a popular package type for high-power MOSFETs, designed for efficient heat dissipation and easy mounting on cooling systems.
