規格
| 屬性 | 價值 |
| Package | Tube |
| Series | HiPerFET™, Ultra X2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 105mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 2.5mA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3330 pF @ 25 V |
| PowerDissipation(Max) | 540W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 (IXTH) |
概述
Description
The IXFH34N65X2 is a high-performance N-channel MOSFET designed for use in a variety of power applications. Manufactured by IXYS, this MOSFET is part of the HiPerFET™ series, known for high efficiency and reliability in demanding environments. It features a voltage rating of 650V and a continuous drain current of 34A, making it suitable for high-voltage and high-current applications.
Key characteristics of the IXFH34N65X2 include low on-state resistance and fast switching capabilities, which enhance energy efficiency and reduce heat generation. The device's TO-247 package design aids in effective heat dissipation, ensuring optimal performance even under thermal stress.
Typical applications for the IXFH34N65X2 include power converters, motor drives, and uninterruptible power supplies (UPS). Its robustness and efficiency make it a preferred choice for engineers seeking reliable components for complex power systems. The MOSFET offers a balance between performance, cost, and reliability, making it a versatile component in various industrial and commercial applications.
Key characteristics of the IXFH34N65X2 include low on-state resistance and fast switching capabilities, which enhance energy efficiency and reduce heat generation. The device's TO-247 package design aids in effective heat dissipation, ensuring optimal performance even under thermal stress.
Typical applications for the IXFH34N65X2 include power converters, motor drives, and uninterruptible power supplies (UPS). Its robustness and efficiency make it a preferred choice for engineers seeking reliable components for complex power systems. The MOSFET offers a balance between performance, cost, and reliability, making it a versatile component in various industrial and commercial applications.
Equivalent
The IXFH34N65X2 is a power MOSFET. Equivalent products could include MOSFETs with similar specifications such as voltage, current ratings, and package type. Some alternatives could be the STMicroelectronics STW34N65M5, Infineon IPA65R280C6, or the Vishay SiHG34N65E. However, always verify the specific parameters like gate charge, on-resistance, and switching speed to ensure compatibility with your application.
Features
The IXFH34N65X2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high efficiency and robust design, which is suitable for various high-power applications. Here are some key features:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of 650V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is about 34A, allowing it to handle significant power loads.
3. R_DS(on): The on-state resistance is relatively low, which minimizes power loss and heat generation, enhancing efficiency.
4. Package Type: Often available in TO-247 packaging, which provides good thermal performance and is suitable for mounting on heatsinks.
5. Switching Speed: It is designed for fast switching speeds, which improves efficiency in applications like power supplies and motor controls.
6. Thermal Performance: Built to handle high junction temperatures, ensuring reliability under heavy loads.
These features make the IXFH34N65X2 ideal for use in power converters, inverters, and other high-power circuits.
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of 650V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is about 34A, allowing it to handle significant power loads.
3. R_DS(on): The on-state resistance is relatively low, which minimizes power loss and heat generation, enhancing efficiency.
4. Package Type: Often available in TO-247 packaging, which provides good thermal performance and is suitable for mounting on heatsinks.
5. Switching Speed: It is designed for fast switching speeds, which improves efficiency in applications like power supplies and motor controls.
6. Thermal Performance: Built to handle high junction temperatures, ensuring reliability under heavy loads.
These features make the IXFH34N65X2 ideal for use in power converters, inverters, and other high-power circuits.
Pinout
The IXFH34N65X2 is a power MOSFET manufactured by IXYS, designed for high-efficiency performance in power applications. It features a TO-247 package, which typically has a three-pin configuration. The pin count and functions for this MOSFET are as follows:
1. Pin 1 (Gate): This is the control terminal that modulates the conductivity between the drain and source. Applying a voltage to the gate allows for the control of the current flow through the MOSFET.
2. Pin 2 (Drain): This is the terminal where current enters the MOSFET from the load. It is connected to the device's drain region.
3. Pin 3 (Source): This terminal allows current to exit the MOSFET. It is connected to the source region and typically goes to the ground or the negative side of the power supply in a circuit.
The IXFH34N65X2 is designed for applications requiring high voltage and current, making it suitable for use in switching power supplies, motor drives, and other power management applications.
1. Pin 1 (Gate): This is the control terminal that modulates the conductivity between the drain and source. Applying a voltage to the gate allows for the control of the current flow through the MOSFET.
2. Pin 2 (Drain): This is the terminal where current enters the MOSFET from the load. It is connected to the device's drain region.
3. Pin 3 (Source): This terminal allows current to exit the MOSFET. It is connected to the source region and typically goes to the ground or the negative side of the power supply in a circuit.
The IXFH34N65X2 is designed for applications requiring high voltage and current, making it suitable for use in switching power supplies, motor drives, and other power management applications.
Manufacturer
The IXFH34N65X2 is manufactured by IXYS Corporation. IXYS is a semiconductor company that specializes in the development and production of power semiconductors, integrated circuits, and power modules. The company provides a wide range of products used in various applications, including industrial, telecommunications, automotive, and consumer electronics. IXYS is known for its expertise in power management and efficiency, offering solutions that are integral to enhancing energy efficiency and performance in electronic systems.
Application
The IXFH34N65X2 is a N-channel MOSFET designed for high-efficiency power conversion applications. It is commonly used in areas such as switch-mode power supplies, motor drives, induction heating, uninterruptible power supplies, and solar inverters. Its ability to handle high voltages and currents makes it suitable for industrial applications, such as welding equipment and power tools, as well as in electric vehicle systems for efficient power management. Additionally, it can be used in audio amplifiers for enhancing sound quality. Its fast switching speed and low on-resistance contribute to improved energy efficiency and thermal performance across these application areas.
Package
The IXFH34N65X2 is a power MOSFET and comes in a TO-247 package type.
