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IV1Q12050T4
+物料清單SIC MOSFET, 1200V 50MOHM, TO-247
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製造商發明晶片
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製造商部分 #IV1Q12050T4
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有存貨4783
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規格
| 屬性 | 價值 |
| Supplier | Inventchip |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 58A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 20V |
| Rds On(Max) @ Id Vgs | 65mOhm @ 20A, 20V |
| Vgs(th)(Max) @ Id | 3.2V @ 6mA |
| Gate Charge(Qg)(Max) @ Vgs | 120 nC @ 20 V |
| Vgs(Max) | +20V, -5V |
| Input Capacitance(Ciss)(Max) @ Vds | 2750 pF @ 800 V |
| Power Dissipation (Max) | 344W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
