ISL9R3060P2

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ISL9R3060P2

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DIODE AVALANCHE 600V 30A TO2202

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  • 製造商部分 #ISL9R3060P2

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規格

屬性 價值
Series Stealth™
Part Status Obsolete
Technology Avalanche
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 30A
Voltage - Forward (Vf) (Max) @ If 2.4 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 600 V
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number ISL9R3060
Reverse Recovery Time (trr) 45 ns

概述

Description

The ISL9R3060P2 is a high-performance N-channel MOSFET designed for power management applications. It features a low on-state resistance (RDS(on)), enabling efficient energy conversion and reduced heat generation. With a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 30A, it is suitable for various applications, including DC-DC converters, power supplies, and motor control systems.
The MOSFET is housed in a TO-220 package, which facilitates effective thermal management, allowing for higher power dissipation. Its fast switching capabilities make it ideal for high-frequency operations, improving overall system efficiency. Additionally, the ISL9R3060P2 includes integrated features such as gate protection to enhance reliability.
Overall, this MOSFET is a versatile component suitable for engineers looking to optimize power efficiency and thermal performance in their designs.

Equivalent

The ISL9R3060P2 is a power MOSFET known for high efficiency and low on-resistance. Equivalent products include the Infineon BSC090N06LS, Nexperia PSMN2R8-80BS, and Vishay SiR306DP. When selecting alternatives, consider parameters like voltage rating, current capability, and package type to ensure compatibility with your application.

Features

The ISL9R3060P2 is a highly integrated, N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 60V, suitable for various power management applications.
2. Current Rating: Can handle a continuous drain current of up to 30A, making it ideal for high-current applications.
3. Low RDS(on): Features a low on-resistance rating, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Optimized for high-speed switching, reducing transition losses in power conversion circuits.
5. Thermal Performance: Equipped with a robust thermal package for effective heat dissipation, ensuring reliable operation under high load conditions.
6. Gate Threshold Voltage: Designed for low gate voltage drive, making it compatible with various microcontrollers and logic levels.
7. Applications: Suitable for use in DC-DC converters, motor drivers, and other power management systems.
This combination of features makes the ISL9R3060P2 an excellent choice for designers looking to enhance efficiency in power delivery systems.

Pinout

The ISL9R3060P2 is a N-channel MOSFET designed for high-voltage applications, specifically in power management and conversion circuits. It features a total of 8 pins.
The pin functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The main output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the load.
4. Body Diode - Internal diode for reverse current protection.
5. Thermal Pad - For heat dissipation; typically connected to the PCB ground or a heatsink.
The device is suitable for applications such as DC-DC converters, motor drives, and other switching applications requiring efficient performance at high voltages and currents.

Manufacturer

The ISL9R3060P2 is manufactured by Renesas Electronics Corporation. Renesas is a global semiconductor company that specializes in microcontrollers, analog, power, and system-on-chip (SoC) solutions. It was formed in 2010 through the merger of NEC Electronics and Renesas Technology, both of which have a long history in the semiconductor industry. Renesas primarily focuses on automotive, industrial, and IoT applications, providing innovative products and solutions that drive advancements in technology and electronics. The company is known for its commitment to quality and reliability, making it a key player in the development of components for various electronic systems.

Application

The ISL9R3060P2 is a high-performance N-channel MOSFET primarily used in power management applications. Key application areas include:
1. DC-DC Converters: Used in switching power supplies for efficient voltage conversion.
2. Motor Drives: Employed in motor control circuits for electric vehicles and industrial automation.
3. Power Management: Utilized in battery management systems and energy storage applications.
4. LED Drivers: Applied in lighting solutions for efficient driving of LED arrays.
5. Telecommunications: Used in power amplifiers and RF applications to enhance efficiency.
Its low on-resistance and high switching speed make it suitable for these applications.

Package

The ISL9R3060P2 is packaged in a TO-220 form factor. This type of package allows for efficient heat dissipation and is commonly used for power semiconductor devices.

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