IS62WV102416EBLL-55BLI

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IS62WV102416EBLL-55BLI

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IC SRAM 16MBIT PARALLEL 48VFBGA

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  • 製造商部分 #IS62WV102416EBLL-55BLI

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規格

屬性 價值
Package / Case Tray
Part Status Active
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 16Mb (1M x 16)
Memory Interface Parallel
Write Cycle Time - Word Page 55ns
Access Time 55 ns
Voltage - Supply 2.2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

概述

Description

IS62WV102416EBLL-55BLI is a high-density static RAM device from ISSI (IS62WV family). It offers 1,024K × 16 organization, totaling 16 Mbits (about 2 MB) of storage. The -55 indicates a 55 ns access time. It is a parallel, asynchronous SRAM with a 16‑bit data bus, designed for fast random access and relatively low power. Typical supply is around 3.3 V (broadly 2.7–3.6 V for many IS62WV parts); there are commercial and industrial temperature variants—check the datasheet for exact ranges. Key features include standby when CE is high and straightforward OE/WE control for reads/writes. Applications include cache memory, frame buffers, graphics buffering, and other buffering roles in embedded systems requiring fast 16‑bit access. The EBLL packaging code denotes the specific mechanical/packaging variant. For exact pinout, electrical characteristics, timing diagrams, and ordering details, consult the ISSI IS62WV102416EBLL-55BLI datasheet.

Equivalent

I can provide exact cross-references, but I need details: what is the operating voltage (1.8V/2.5V/3.3V), package type (SOIC, TSOP, etc.), and the target density (16 Mb, i.e., 1M x 16). Once you confirm, I’ll list exact equivalents from Micron, Winbond, Cypress, Renesas, ISSI, etc.

Features

IS62WV102416EBLL-55BLI is a 1M x 16-bit static RAM (SRAM) in a Pb-free package. Key features typically include:
- 1,048,576 x 16-bit asynchronous SRAM (16-bit data bus)
- 55 ns access time
- Wide-voltage operation (WV): typically 2.7V–3.6V
- Separate address and data signals with three-state outputs
- Control pins: Chip Enable (CE#), Output Enable (OE#), Write Enable (WE#)
- TTL-compatible I/O levels
- Industrial temperature range (approximately -40°C to 85°C)
Note: exact packaging and voltage specs may vary by lot; check the latest datasheet for precise tolerances and pinout.

Pinout

- Pin count: 44 pins (typical for this memory in a TSOP/44‑pin package)
- Function: 16‑Mbit static RAM (SRAM) with asynchronous interface, organized as 1,024K × 16 (addresses A0–A19, data DQ0–DQ15; control signals CE, OE, WE; LB/UB in many packages).

Manufacturer

- Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
- What kind of company: A semiconductor company that designs and markets memory integrated circuits (DRAM, SRAM, and other memory products) for electronic devices.

Application

IS62WV102416EBLL-55BLI is a 16-Mbit, 1,024K × 16 low‑voltage SRAM with about 55 ns access time. Typical application areas include:
- Main memory/data buffer for embedded microcontrollers/SoCs
- Frame buffers for LCD/TFT displays and cameras
- Video/image processing buffers and caches
- Packet buffering in routers, switches and other networking gear
- Cache/buffer RAM in consumer electronics (set-top boxes, DVD players)
- Automotive and industrial control systems needing fast, reliable RAM

Package

Leadless Ball Grid Array (LGA) package.

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