規格
| 屬性 | 價值 |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 333 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 450 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
IS43DR16128B-3DBLI is an ISSI (Integrated Silicon Solutions, Inc.) 128-kbit dynamic RAM (DRAM) device. It is organized as 16,384 words × 8 bits (16K × 8), suitable for small on-board memory needs in embedded electronics.
Key points:
- Type/organization: DRAM, 16K × 8 (128 kbit total).
- Interface: multiplexed address inputs with RAS/CAS control; asynchronous DRAM operation.
- Refresh: requires periodic row/column refresh to retain data.
- Voltage: typically operates from a 3.0 V–3.6 V supply (3.3 V family common in many ISSI parts).
- Speed/package suffix: “-3” denotes a speed grade; “DBLI” indicates packaging and RoHS lead-free (UL/IBL) status; exact package type and mechanical details in the datasheet.
- Applications: small buffers and memory arrays in consumer electronics, embedded systems, and similar low-to-mid capacity DRAM requirements.
For precise electrical specs (tRC, tRAS, tCAS, current, pinout) and recommended operating conditions, consult the official IS43DR16128B-3DBLI datasheet.
Key points:
- Type/organization: DRAM, 16K × 8 (128 kbit total).
- Interface: multiplexed address inputs with RAS/CAS control; asynchronous DRAM operation.
- Refresh: requires periodic row/column refresh to retain data.
- Voltage: typically operates from a 3.0 V–3.6 V supply (3.3 V family common in many ISSI parts).
- Speed/package suffix: “-3” denotes a speed grade; “DBLI” indicates packaging and RoHS lead-free (UL/IBL) status; exact package type and mechanical details in the datasheet.
- Applications: small buffers and memory arrays in consumer electronics, embedded systems, and similar low-to-mid capacity DRAM requirements.
For precise electrical specs (tRC, tRAS, tCAS, current, pinout) and recommended operating conditions, consult the official IS43DR16128B-3DBLI datasheet.
Equivalent
IS43DR16128B-3DBLI is a 128-Mbit DRAM (16M × 8) in TSOP-II, 3.3V, with -3 timing. Equivalents are other 128-Mbit (16M × 8) DRAMs from Micron, Samsung, Hynix, Nanya, etc., in the same package and voltage. For exact cross-reference, please provide the package (e.g., TSOP-II 54/60-pin) and timing/speed (-3). I can then list precise replacement part numbers.
Pinout
- Pin count: 32 pins
- Function: 16K x 8-bit dynamic RAM (DRAM) with multiplexed address inputs (RAS/CAS/WE) and 3.3V operation.
- Function: 16K x 8-bit dynamic RAM (DRAM) with multiplexed address inputs (RAS/CAS/WE) and 3.3V operation.
Manufacturer
- Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
- What kind of company: A fabless semiconductor company that designs and markets memory ICs (DRAM, SRAM, etc.) and relies on external foundries for fabrication.
- What kind of company: A fabless semiconductor company that designs and markets memory ICs (DRAM, SRAM, etc.) and relies on external foundries for fabrication.
Application
- Embedded systems and microcontroller-based devices
- Consumer electronics (set-top boxes, DVD players, digital cameras)
- Networking/telecom equipment (routers, switches, modems)
- Automotive (infotainment, instrument clusters, ECUs)
- Industrial automation and instrumentation
- Portable/handheld devices with moderate memory and low power needs
- Consumer electronics (set-top boxes, DVD players, digital cameras)
- Networking/telecom equipment (routers, switches, modems)
- Automotive (infotainment, instrument clusters, ECUs)
- Industrial automation and instrumentation
- Portable/handheld devices with moderate memory and low power needs
Package
48-pin TSOP II (Plastic Leaded) package.
