規格
| 屬性 | 價值 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4V, 10V |
| RdsOn(Max)@IdVgs | 65mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 480 pF @ 25 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | IPAK (TO-251AA) |
概述
Description
The IRLU024NPBF is a N-channel power MOSFET from Infineon’s IRL (International Rectifier) series, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 55V
- Current Rating: 17A (continuous)
- Low On-Resistance (RDS(on)): 0.028Ω (max at 10V VGS)
- Fast Switching: Optimized for high-speed performance
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Package: TO-252 (DPAK), surface-mount
Common uses include DC-DC converters, motor control, and power management in consumer electronics, automotive systems, and industrial applications. Its low conduction losses and compact package make it ideal for space-constrained designs.
Note: Always refer to the datasheet for detailed specifications and thermal considerations.
- Voltage Rating: 55V
- Current Rating: 17A (continuous)
- Low On-Resistance (RDS(on)): 0.028Ω (max at 10V VGS)
- Fast Switching: Optimized for high-speed performance
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Package: TO-252 (DPAK), surface-mount
Common uses include DC-DC converters, motor control, and power management in consumer electronics, automotive systems, and industrial applications. Its low conduction losses and compact package make it ideal for space-constrained designs.
Note: Always refer to the datasheet for detailed specifications and thermal considerations.
Equivalent
Equivalent products to the IRLU024NPBF (N-channel MOSFET, 55V, 17A) include:
- IRLZ24NPBF (similar specs, TO-220AB)
- IRFZ24NPBF (slightly higher Rds(on), TO-220AB)
- STP16NF06 (60V, 16A, TO-220)
- FQP17N06L (60V, 17A, TO-220)
Check datasheets for exact compatibility in your circuit.
- IRLZ24NPBF (similar specs, TO-220AB)
- IRFZ24NPBF (slightly higher Rds(on), TO-220AB)
- STP16NF06 (60V, 16A, TO-220)
- FQP17N06L (60V, 17A, TO-220)
Check datasheets for exact compatibility in your circuit.
Features
The IRLU024NPBF is a N-channel HEXFET Power MOSFET with the following key features:
- Voltage Rating: 55V (Drain-to-Source, VDS)
- Current Rating: 17A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (RDS(on) at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Gate Drive Voltage (VGS): ±20V (max), typically 10V for full enhancement
- Power Dissipation: 38W (at 25°C)
- Package: TO-252 (DPAK), surface-mount
- Applications: Power supplies, motor control, DC-DC converters
It offers low conduction losses and efficient thermal performance, making it suitable for high-efficiency power switching.
- Voltage Rating: 55V (Drain-to-Source, VDS)
- Current Rating: 17A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (RDS(on) at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Gate Drive Voltage (VGS): ±20V (max), typically 10V for full enhancement
- Power Dissipation: 38W (at 25°C)
- Package: TO-252 (DPAK), surface-mount
- Applications: Power supplies, motor control, DC-DC converters
It offers low conduction losses and efficient thermal performance, making it suitable for high-efficiency power switching.
Pinout
The IRLU024NPBF is a N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 30V Drain-Source Voltage (VDS)
- 17A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 0.04Ω @ 10V VGS)
- Logic-Level Gate Drive (4V VGS threshold)
Commonly used in power switching, DC-DC converters, and motor control.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 30V Drain-Source Voltage (VDS)
- 17A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 0.04Ω @ 10V VGS)
- Logic-Level Gate Drive (4V VGS threshold)
Commonly used in power switching, DC-DC converters, and motor control.
Application
The IRLU024NPBF, a power MOSFET, is commonly used in:
- Switching Power Supplies: Efficient voltage conversion in DC-DC and AC-DC circuits.
- Motor Control: Drives small motors in appliances, robotics, and automotive systems.
- LED Lighting: Controls current in LED drivers for stable illumination.
- Battery Management: Protects and manages power in portable devices and chargers.
- Load Switching: Enables fast on/off switching in electronic circuits.
Its low on-resistance and high-speed switching make it ideal for energy-efficient, compact designs.
- Switching Power Supplies: Efficient voltage conversion in DC-DC and AC-DC circuits.
- Motor Control: Drives small motors in appliances, robotics, and automotive systems.
- LED Lighting: Controls current in LED drivers for stable illumination.
- Battery Management: Protects and manages power in portable devices and chargers.
- Load Switching: Enables fast on/off switching in electronic circuits.
Its low on-resistance and high-speed switching make it ideal for energy-efficient, compact designs.
Package
The IRLU024NPBF is a power MOSFET in a TO-220AB package. This through-hole package features three leads (gate, drain, source) and a metal tab for heat dissipation. It's commonly used in power switching applications due to its robust design and thermal performance. The TO-220AB is industry-standard, easy to mount, and suitable for medium-power applications.
