規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 5.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 27mOhm @ 5.2A, 10V |
| Vgs(th)(Max)@Id | 2.3V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 2.6 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 382 pF @ 15 V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
概述
Description
The IRLML0030TRPBF is a N-channel MOSFET from Infineon Technologies, designed for low-voltage, high-efficiency switching applications. Key features include:
- 30V drain-source voltage (VDS)
- 5.3A continuous drain current (ID)
- Ultra-low on-resistance (RDS(on)) of 22mΩ at 4.5V gate drive
- Logic-level gate threshold (VGS(th)) for easy drive with 3V/5V signals
- Compact SOT-23 package, ideal for space-constrained designs
Common uses include power management, load switching, and DC-DC converters in portable electronics, IoT devices, and battery-powered systems. Its low gate charge and fast switching make it energy-efficient for high-frequency applications.
For detailed specs, refer to the datasheet on Infineon’s website.
- 30V drain-source voltage (VDS)
- 5.3A continuous drain current (ID)
- Ultra-low on-resistance (RDS(on)) of 22mΩ at 4.5V gate drive
- Logic-level gate threshold (VGS(th)) for easy drive with 3V/5V signals
- Compact SOT-23 package, ideal for space-constrained designs
Common uses include power management, load switching, and DC-DC converters in portable electronics, IoT devices, and battery-powered systems. Its low gate charge and fast switching make it energy-efficient for high-frequency applications.
For detailed specs, refer to the datasheet on Infineon’s website.
Equivalent
Equivalent products to the IRLML0030TRPBF (N-channel MOSFET, 30V, 3.7A, SOT-23) include:
- IRLML6402TRPBF (P-channel, similar specs)
- DMG2305UX-7 (N-channel, 20V, 4A)
- SI2302DS-T1-GE3 (N-channel, 20V, 3A)
- BSS138 (N-channel, 50V, 0.2A, logic-level)
Check datasheets for exact compatibility in your circuit.
- IRLML6402TRPBF (P-channel, similar specs)
- DMG2305UX-7 (N-channel, 20V, 4A)
- SI2302DS-T1-GE3 (N-channel, 20V, 3A)
- BSS138 (N-channel, 50V, 0.2A, logic-level)
Check datasheets for exact compatibility in your circuit.
Features
The IRLML0030TRPBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source, VDSS)
- Current Rating: 3.7A (Continuous Drain, ID)
- Low On-Resistance: 30mΩ (max at VGS = 10V)
- Low Gate Charge: 8.3nC (typical)
- Threshold Voltage: 1V (min, VGS(th))
- Power Dissipation: 1.3W (TA = 25°C)
- Package: SOT-23 (Compact surface-mount)
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Fast Switching: Suitable for high-efficiency applications
Ideal for low-voltage switching, power management, and battery-powered devices.
- Voltage Rating: 30V (Drain-Source, VDSS)
- Current Rating: 3.7A (Continuous Drain, ID)
- Low On-Resistance: 30mΩ (max at VGS = 10V)
- Low Gate Charge: 8.3nC (typical)
- Threshold Voltage: 1V (min, VGS(th))
- Power Dissipation: 1.3W (TA = 25°C)
- Package: SOT-23 (Compact surface-mount)
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Fast Switching: Suitable for high-efficiency applications
Ideal for low-voltage switching, power management, and battery-powered devices.
Pinout
The IRLML0030TRPBF is a SOT-23 packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching.
2. Drain (D) – Connects to the load (high-side).
3. Source (S) – Ground/reference terminal.
Key Features:
- 30V drain-source voltage (VDS)
- 5.3A continuous drain current (ID)
- Low threshold voltage (logic-level compatible)
- Fast switching for power management applications
Commonly used in DC-DC converters, load switches, and battery protection circuits.
1. Gate (G) – Controls the switching.
2. Drain (D) – Connects to the load (high-side).
3. Source (S) – Ground/reference terminal.
Key Features:
- 30V drain-source voltage (VDS)
- 5.3A continuous drain current (ID)
- Low threshold voltage (logic-level compatible)
- Fast switching for power management applications
Commonly used in DC-DC converters, load switches, and battery protection circuits.
Application
The IRLML0030TRPBF, a 30V N-channel MOSFET, is commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Portable Devices – Smartphones, tablets, wearables.
4. Motor Control – Small brushed DC motors.
5. LED Drivers – Backlight control in displays.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, low-power applications.
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Portable Devices – Smartphones, tablets, wearables.
4. Motor Control – Small brushed DC motors.
5. LED Drivers – Backlight control in displays.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, low-power applications.
Package
The IRLML0030TRPBF is a MOSFET in a SOT-23 surface-mount package. This compact 3-pin package is widely used for low-power applications, offering a small footprint (2.9mm x 1.3mm x 0.95mm). It is suitable for automated assembly processes and is commonly found in portable electronics due to its efficiency and space-saving design.
