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IRLHS6242TRPBF
+物料清單MOSFET N-CH 20V 10A/12A 6PQFN
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製造商英飛淩科技
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製造商部分 #IRLHS6242TRPBF
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規格
| 屬性 | 價值 |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 10 V |
| Power Dissipation (Max) | 1.98W (Ta), 9.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-PQFN (2x2) (DFN2020) |
| Package / Case | 6-PowerVDFN |
| Base Product Number | IRLHS6242 |
概述
Description
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Equivalent
Features
1. N-Channel Configuration: Suitable for low-side switching applications.
2. Low On-Resistance (RDS(on)): Provides efficient performance with minimal power loss, enhancing thermal management.
3. High Voltage Rating: Typically rated for a maximum drain-source voltage (VDS) of around 60V, allowing for versatile use in different circuits.
4. Fast Switching Speed: Designed for high-frequency applications, ensuring rapid turn-on and turn-off times.
5. Low Gate Charge (Qg): Reduces power consumption during switching, contributing to overall system efficiency.
6. Thermal Stability: Built to operate efficiently in various thermal conditions, with proper thermal management.
7. Surface Mount Package: Available in a compact package type, facilitating space-saving designs on PCBs.
These features make the IRLHS6242TRPBF a popular choice for applications such as motor drives, power supplies, and consumer electronics.
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connected to the load for the first MOSFET.
3. Source 1 (S1) - Source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connected to the load for the second MOSFET.
6. Source 2 (S2) - Source terminal for the second MOSFET.
7. Drain 1 (D1) - Common drain terminal for both MOSFETs.
8. Source 2 (S2) - Common source for both MOSFETs.
This device is optimized for low on-resistance and high-speed switching, making it suitable for various power management applications.
Manufacturer
Application
1. Switching Power Supplies: Efficiently converting and regulating voltage.
2. DC-DC Converters: Used in buck, boost, and buck-boost configurations.
3. Motor Control: Driving motors in various electronic devices.
4. LED Drivers: Controlling and driving LED lighting systems.
5. Class D Amplifiers: Enhancing audio amplification with high efficiency.
6. Battery Management Systems: Managing charge and discharge processes in battery packs.
Its low on-resistance and fast switching capabilities make it ideal for these applications.