規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.5mOhm @ 20A, 4.5V |
| Vgs(th)(Max) @ Id | 1.1V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 62 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 3170 pF @ 25 V |
| Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (3x3) |
概述
Description
The IRLHM630TRPBF is a 30V N-channel HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 1.8 mΩ at 10V VGS, reducing conduction losses.
- High Current Handling: Up to 195A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and load switches.
- Logic-Level Gate Drive: Fully enhanced at 4.5V, making it compatible with low-voltage controllers.
- Robust Packaging: TO-252 (DPAK) for efficient thermal performance.
Ideal for battery protection, power supplies, and automotive systems, this MOSFET combines efficiency, thermal stability, and compact design. Always refer to the datasheet for detailed specifications.
- Low On-Resistance (RDS(on)): Typically 1.8 mΩ at 10V VGS, reducing conduction losses.
- High Current Handling: Up to 195A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and load switches.
- Logic-Level Gate Drive: Fully enhanced at 4.5V, making it compatible with low-voltage controllers.
- Robust Packaging: TO-252 (DPAK) for efficient thermal performance.
Ideal for battery protection, power supplies, and automotive systems, this MOSFET combines efficiency, thermal stability, and compact design. Always refer to the datasheet for detailed specifications.
Equivalent
Equivalent products to the IRLHM630TRPBF (a 30V HEXFET Power MOSFET) include:
- IRLHM630 (same series, different packaging)
- IRLML6303TRPBF (similar specs, SOT-23 package)
- SI2302DS-T1-GE3 (Vishay alternative)
- DMG2305UX-7 (Diodes Inc. alternative)
Check datasheets for exact compatibility in your application.
- IRLHM630 (same series, different packaging)
- IRLML6303TRPBF (similar specs, SOT-23 package)
- SI2302DS-T1-GE3 (Vishay alternative)
- DMG2305UX-7 (Diodes Inc. alternative)
Check datasheets for exact compatibility in your application.
Features
The IRLHM630TRPBF is a HEXFET Power MOSFET by Infineon, featuring:
- Voltage Rating: 30V
- Current Rating: 62A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max @ VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Avalanche Rated: Robust against transient voltage spikes
- Package: TO-252 (DPAK), surface-mountable
- Low Gate Charge (Qg): Enhances switching efficiency
- Applications: DC-DC converters, motor control, power management
This MOSFET is designed for high-current, low-voltage applications with minimal power loss.
- Voltage Rating: 30V
- Current Rating: 62A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max @ VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Avalanche Rated: Robust against transient voltage spikes
- Package: TO-252 (DPAK), surface-mountable
- Low Gate Charge (Qg): Enhances switching efficiency
- Applications: DC-DC converters, motor control, power management
This MOSFET is designed for high-current, low-voltage applications with minimal power loss.
Pinout
The IRLHM630TRPBF is a PowerTrench MOSFET in a D2PAK (TO-263-3) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- 62A continuous drain current (ID)
- Ultra-low on-resistance (RDS(on)) for high efficiency
- Logic-level gate drive (compatible with 5V/3.3V controllers)
Common applications:
- DC-DC converters
- Motor control
- Power management in automotive/industrial systems
Package: D2PAK (TO-263-3) for high-power dissipation.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- 62A continuous drain current (ID)
- Ultra-low on-resistance (RDS(on)) for high efficiency
- Logic-level gate drive (compatible with 5V/3.3V controllers)
Common applications:
- DC-DC converters
- Motor control
- Power management in automotive/industrial systems
Package: D2PAK (TO-263-3) for high-power dissipation.
