規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 36A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4V, 10V |
| Rds On(Max) @ Id Vgs | 44mOhm @ 18A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 74 nC @ 5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 1800 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概述
Description
The IRL540NPBF is an N-channel HEXFET Power MOSFET from Infineon, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): 44mΩ (max at 10V VGS)
- Fast Switching: Optimized for speed with low gate charge (Qg).
- Logic-Level Gate Drive: Fully enhanced at 4V (VGS), making it suitable for 5V microcontroller applications.
- Package: TO-220AB (through-hole), robust for power dissipation.
Common uses include DC-DC converters, motor control, and power management in industrial/consumer electronics. Its Pb-free (NPBF) construction complies with RoHS standards.
For best performance, ensure proper heat sinking and gate drive strength. Check datasheet for detailed specs.
- Voltage Rating: 100V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): 44mΩ (max at 10V VGS)
- Fast Switching: Optimized for speed with low gate charge (Qg).
- Logic-Level Gate Drive: Fully enhanced at 4V (VGS), making it suitable for 5V microcontroller applications.
- Package: TO-220AB (through-hole), robust for power dissipation.
Common uses include DC-DC converters, motor control, and power management in industrial/consumer electronics. Its Pb-free (NPBF) construction complies with RoHS standards.
For best performance, ensure proper heat sinking and gate drive strength. Check datasheet for detailed specs.
Equivalent
The IRL540NPBF (HEXFET Power MOSFET, 100V, 33A) has several equivalents:
- IRF540NPBF (Similar specs, same package)
- IRF540ZPBF (Higher current rating)
- STP55NF06L (Lower voltage but comparable current)
- FQP50N06 (60V, 50A alternative)
- AOT540 (Advanced alternative with similar ratings)
Check datasheets for exact compatibility in your circuit.
- IRF540NPBF (Similar specs, same package)
- IRF540ZPBF (Higher current rating)
- STP55NF06L (Lower voltage but comparable current)
- FQP50N06 (60V, 50A alternative)
- AOT540 (Advanced alternative with similar ratings)
Check datasheets for exact compatibility in your circuit.
Features
The IRL540NPBF is an N-channel HEXFET Power MOSFET with the following key features:
- Voltage Rating: 100V drain-to-source (VDSS)
- Current Handling: 33A continuous (ID) at 25°C
- Low On-Resistance: 44mΩ (max) at VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Gate Drive: Logic-level compatible (VGS(th) = 2-4V)
- Power Dissipation: 150W (TC = 25°C)
- Package: TO-220AB (through-hole, easy mounting)
- Avalanche Rated: Robust against inductive spikes
Ideal for power switching, motor control, and DC-DC converters.
- Voltage Rating: 100V drain-to-source (VDSS)
- Current Handling: 33A continuous (ID) at 25°C
- Low On-Resistance: 44mΩ (max) at VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Gate Drive: Logic-level compatible (VGS(th) = 2-4V)
- Power Dissipation: 150W (TC = 25°C)
- Package: TO-220AB (through-hole, easy mounting)
- Avalanche Rated: Robust against inductive spikes
Ideal for power switching, motor control, and DC-DC converters.
Pinout
The IRL540NPBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- Logic-level gate drive (can be driven by 5V).
- 100V drain-source voltage (VDS).
- 33A continuous drain current (ID).
- Low on-resistance (RDS(on) = 44mΩ @ 10V).
Commonly used in power switching, motor control, and DC-DC converters.
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- Logic-level gate drive (can be driven by 5V).
- 100V drain-source voltage (VDS).
- 33A continuous drain current (ID).
- Low on-resistance (RDS(on) = 44mΩ @ 10V).
Commonly used in power switching, motor control, and DC-DC converters.
Application
The IRL540NPBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage regulation.
2. Motor Control – Drives DC and stepper motors in robotics/automotive systems.
3. LED Drivers – Controls high-power LED arrays.
4. Relay/SSR Replacements – Fast switching in industrial automation.
5. DC-DC Converters – Power management in electronics.
Its low on-resistance (RDS(on)) and high current handling (33A) make it ideal for high-efficiency, high-power applications.
1. Switching Power Supplies – Efficient voltage regulation.
2. Motor Control – Drives DC and stepper motors in robotics/automotive systems.
3. LED Drivers – Controls high-power LED arrays.
4. Relay/SSR Replacements – Fast switching in industrial automation.
5. DC-DC Converters – Power management in electronics.
Its low on-resistance (RDS(on)) and high current handling (33A) make it ideal for high-efficiency, high-power applications.
Package
The IRL540NPBF is a power MOSFET available in a TO-220AB package. This through-hole package is widely used for its robustness, ease of mounting, and efficient heat dissipation. It features three leads (Gate, Drain, Source) and is suitable for high-current applications. The TO-220AB package is compatible with standard PCB mounting and heat sinks.
