規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Part Status | Obsolete |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 20 A |
| Current - Collector Pulsed(Icm) | 40 A |
| Vce(on)(Max) @ Vge Ic | 4.2V @ 15V, 10A |
| Power - Max | 100 W |
| Switching Energy | 640µJ (on), 920µJ (off) |
| Input Type | Standard |
| Gate Charge | 53 nC |
| Td(on / off) @ 25°C | 28ns/200ns |
| Test Condition | 960V, 10A, 23Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
概述
Equivalent
Equivalent products to the IRG4PH30KPBF IGBT chip include:
- IRG4PH30UDPBF (similar specs, different package)
- IRG4PH30KDPBF (alternative with updated characteristics)
- STGW30H60DF (STMicroelectronics alternative)
- HGTG30N60A4D (Fairchild/Renesas alternative)
- FGA30N60SMD (ON Semiconductor alternative)
Check datasheets for exact compatibility in voltage (600V), current (23A), and switching characteristics.
- IRG4PH30UDPBF (similar specs, different package)
- IRG4PH30KDPBF (alternative with updated characteristics)
- STGW30H60DF (STMicroelectronics alternative)
- HGTG30N60A4D (Fairchild/Renesas alternative)
- FGA30N60SMD (ON Semiconductor alternative)
Check datasheets for exact compatibility in voltage (600V), current (23A), and switching characteristics.
Features
The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) with the following key features:
- Voltage Rating: 600V (VCES)
- Current Rating: 18A (IC @25°C)
- Low VCE(sat): 1.8V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Input Impedance: MOSFET-like gate drive characteristics
- Robust Design: Built-in anti-parallel diode for inductive load handling
- Temperature Range: -55°C to +150°C (Tj)
- Package: TO-247AC (3-pin) for efficient heat dissipation
Ideal for motor drives, inverters, and power switching applications.
- Voltage Rating: 600V (VCES)
- Current Rating: 18A (IC @25°C)
- Low VCE(sat): 1.8V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Input Impedance: MOSFET-like gate drive characteristics
- Robust Design: Built-in anti-parallel diode for inductive load handling
- Temperature Range: -55°C to +150°C (Tj)
- Package: TO-247AC (3-pin) for efficient heat dissipation
Ideal for motor drives, inverters, and power switching applications.
Pinout
The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) with a TO-247AC package, featuring 3 pins:
1. Gate (G) – Controls switching via a voltage signal.
2. Collector (C) – Main current input (high voltage side).
3. Emitter (E) – Current output (ground/reference side).
Key Functions:
- Designed for high-power switching (e.g., inverters, motor drives).
- Rated for 1200V VCES and 30A IC (at 100°C).
- Includes a fast recovery anti-parallel diode for inductive load protection.
Applications: UPS, welding machines, and industrial power systems.
1. Gate (G) – Controls switching via a voltage signal.
2. Collector (C) – Main current input (high voltage side).
3. Emitter (E) – Current output (ground/reference side).
Key Functions:
- Designed for high-power switching (e.g., inverters, motor drives).
- Rated for 1200V VCES and 30A IC (at 100°C).
- Includes a fast recovery anti-parallel diode for inductive load protection.
Applications: UPS, welding machines, and industrial power systems.
Manufacturer
The IRG4PH30KPBF is manufactured by Infineon Technologies, a leading German semiconductor company specializing in power electronics, microcontrollers, and security solutions. Infineon is known for high-performance components used in automotive, industrial, and consumer applications.
The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for power switching in applications like motor drives and inverters. Infineon's products are widely recognized for reliability and efficiency in demanding environments.
The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for power switching in applications like motor drives and inverters. Infineon's products are widely recognized for reliability and efficiency in demanding environments.
Application
The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) commonly used in:
1. Power Electronics – Inverters, converters, and motor drives.
2. Industrial Applications – Welding machines, induction heating, and UPS systems.
3. Renewable Energy – Solar inverters and wind power systems.
4. Consumer Electronics – High-power appliances like air conditioners and refrigerators.
5. Automotive – Electric vehicle (EV) charging and traction control systems.
Its high voltage (600V) and current (24A) ratings make it suitable for medium-power switching applications requiring efficiency and reliability.
1. Power Electronics – Inverters, converters, and motor drives.
2. Industrial Applications – Welding machines, induction heating, and UPS systems.
3. Renewable Energy – Solar inverters and wind power systems.
4. Consumer Electronics – High-power appliances like air conditioners and refrigerators.
5. Automotive – Electric vehicle (EV) charging and traction control systems.
Its high voltage (600V) and current (24A) ratings make it suitable for medium-power switching applications requiring efficiency and reliability.
Package
The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247AC package. This package type is a through-hole, three-lead design with a metal tab for heat dissipation, commonly used for high-power applications. It provides robust thermal and electrical performance, suitable for switching and motor control circuits.
