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IRG4PF50WDPBF
+物料清單IGBT 900V 51A TO-247AC
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製造商英飛淩科技
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製造商部分 #IRG4PF50WDPBF
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規格
| 屬性 | 價值 |
| PartStatus | Obsolete |
| Voltage-CollectorEmitterBreakdown(Max) | 900 V |
| Current-Collector(Ic)(Max) | 51 A |
| Vce(on)(Max)@Vge,Ic | 2.7V @ 15V, 28A |
| Power-Max | 200 W |
| SwitchingEnergy | 2.63mJ (on), 1.34mJ (off) |
| InputType | Standard |
| GateCharge | 160 nC |
| Td(on/off)@25°C | 71ns/150ns |
| TestCondition | 720V, 28A, 5Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
| SupplierDevicePackage | TO-247AC |
| BaseProductNumber | IRG4PF50 |
| Current-CollectorPulsed(Icm) | 204 A |
| ReverseRecoveryTime(trr) | 90 ns |
概述
Description
The IRG4PF50WDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications in power electronics. It is rated for a maximum collector-emitter voltage of 600V and a continuous collector current of 50A, making it suitable for applications like motor drives, inverters, and power supplies. The device features low conduction and switching losses, which enhance efficiency and thermal performance. The "P" in its name indicates that it is a P-type IGBT, and "DPBF" signifies it is available in a surface-mount package with a lead-free finish.
Key specifications include a maximum gate-emitter voltage of ±20V and a total gate charge that allows for efficient driving. The IRG4PF50WDPBF is favored in industrial applications due to its robustness and reliability, and it can operate at high frequencies, making it ideal for modern energy conversion systems.
Key specifications include a maximum gate-emitter voltage of ±20V and a total gate charge that allows for efficient driving. The IRG4PF50WDPBF is favored in industrial applications due to its robustness and reliability, and it can operate at high frequencies, making it ideal for modern energy conversion systems.
Equivalent
The IRG4PF50WDPBF is a high-power IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. IRG4PH50KD - similar specifications for high voltage applications.
2. FGA50N120 - another high-voltage IGBT option.
3. MBB50N60 - offers comparable performance for switching applications.
4. STGW30H120 - a suitable alternative with similar characteristics.
Always verify pin configurations and specifications before substituting components.
1. IRG4PH50KD - similar specifications for high voltage applications.
2. FGA50N120 - another high-voltage IGBT option.
3. MBB50N60 - offers comparable performance for switching applications.
4. STGW30H120 - a suitable alternative with similar characteristics.
Always verify pin configurations and specifications before substituting components.
Features
The IRG4PF50WDPBF is a high-power IGBT (Insulated Gate Bipolar Transistor) designed for various applications including motor drives, inverters, and other power electronic circuits. Key features include:
- Voltage Rating: 600V, suitable for high-voltage applications.
- Current Rating: Capable of handling up to 50A of continuous collector current.
- Low Saturation Voltage: Ensures efficient operation and reduced power loss.
- Fast Switching Speed: Facilitates efficient switching with lower switching losses, making it ideal for high-frequency applications.
- Robust Thermal Performance: Designed to operate in high-temperature environments, enhancing reliability.
- Isolation: Integrated gate-drive protection for enhanced safety and performance.
- Package Type: Typically available in a TO-247 package, offering ease of mounting and heat dissipation.
Overall, the IRG4PF50WDPBF is suitable for high-efficiency and high-performance power electronics applications.
- Voltage Rating: 600V, suitable for high-voltage applications.
- Current Rating: Capable of handling up to 50A of continuous collector current.
- Low Saturation Voltage: Ensures efficient operation and reduced power loss.
- Fast Switching Speed: Facilitates efficient switching with lower switching losses, making it ideal for high-frequency applications.
- Robust Thermal Performance: Designed to operate in high-temperature environments, enhancing reliability.
- Isolation: Integrated gate-drive protection for enhanced safety and performance.
- Package Type: Typically available in a TO-247 package, offering ease of mounting and heat dissipation.
Overall, the IRG4PF50WDPBF is suitable for high-efficiency and high-performance power electronics applications.
Pinout
The IRG4PF50WDPBF is an IGBT (Insulated Gate Bipolar Transistor) used primarily in power applications. It features a total of 6 pins.
Here’s a brief description of the pin functions:
1. Gate (G) - Pin for the gate control signal. It is used to turn the IGBT on and off.
2. Collector (C) - The positive terminal for the load current. This is where the main voltage is applied.
3. Emitter (E) - The negative terminal for the load current. This pin typically connects to ground or the lower voltage potential in the circuit.
4-6. Additional Pins - These may be used for thermal sensing or other functions depending on the specific design and application in the package.
The IRG4PF50WDPBF is designed for high-speed switching applications and is rated for 600V with a continuous collector current of 50A. Always refer to the datasheet for detailed specifications and applications.
Here’s a brief description of the pin functions:
1. Gate (G) - Pin for the gate control signal. It is used to turn the IGBT on and off.
2. Collector (C) - The positive terminal for the load current. This is where the main voltage is applied.
3. Emitter (E) - The negative terminal for the load current. This pin typically connects to ground or the lower voltage potential in the circuit.
4-6. Additional Pins - These may be used for thermal sensing or other functions depending on the specific design and application in the package.
The IRG4PF50WDPBF is designed for high-speed switching applications and is rated for 600V with a continuous collector current of 50A. Always refer to the datasheet for detailed specifications and applications.
Manufacturer
The manufacturer of the IRG4PF50WDPBF is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and products for automotive, industrial, and communication applications. Infineon is known for its focus on high-performance, energy-efficient technologies that support various industries, such as automotive, industrial automation, and consumer electronics. The company plays a significant role in advancing technologies related to power management, safety, and connectivity.
Application
The IRG4PF50WDPBF is an IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications. Key application areas include:
1. Industrial Motor Drives: Used to control and drive electric motors efficiently.
2. Power Inverters: Essential in renewable energy systems like solar and wind power for converting DC to AC.
3. Uninterruptible Power Supplies (UPS): Ensures reliable power supply during outages.
4. Induction Heating: Applied in heating systems for metal processing.
5. Welding Equipment: Utilized in various welding techniques for high power requirements.
Its high voltage and current rating make it suitable for these demanding applications.
1. Industrial Motor Drives: Used to control and drive electric motors efficiently.
2. Power Inverters: Essential in renewable energy systems like solar and wind power for converting DC to AC.
3. Uninterruptible Power Supplies (UPS): Ensures reliable power supply during outages.
4. Induction Heating: Applied in heating systems for metal processing.
5. Welding Equipment: Utilized in various welding techniques for high power requirements.
Its high voltage and current rating make it suitable for these demanding applications.
Package
The IRG4PF50WDPBF is packaged in a TO-247 form factor. This package type is designed for high-power applications, offering robust thermal performance and ease of mounting in various electronic circuits.
