規格
| 屬性 | 價值 |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 17A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 75mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 370 pF @ 25 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
概述
Description
The IRFU024NPBF is a 30V N-channel HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) at 10V, reducing conduction losses.
- High Current Handling: Up to 195A continuous drain current (ID).
- Fast Switching: Optimized for applications like DC-DC converters, motor drives, and power supplies.
- Robust Design: Avalanche-rated and lead-free (Pb-free) compliant.
Packaged in a TO-220 form factor, it offers easy mounting and thermal management. Typical uses include synchronous rectification, load switching, and battery protection circuits.
For detailed specs, refer to the datasheet (Infineon part number IRFU024NPBF).
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) at 10V, reducing conduction losses.
- High Current Handling: Up to 195A continuous drain current (ID).
- Fast Switching: Optimized for applications like DC-DC converters, motor drives, and power supplies.
- Robust Design: Avalanche-rated and lead-free (Pb-free) compliant.
Packaged in a TO-220 form factor, it offers easy mounting and thermal management. Typical uses include synchronous rectification, load switching, and battery protection circuits.
For detailed specs, refer to the datasheet (Infineon part number IRFU024NPBF).
Equivalent
Equivalent products to the IRFU024NPBF (N-channel MOSFET, 55V, 50A) include:
- IRF3205 (55V, 110A)
- IRL40B209 (40V, 80A)
- STP55NF06L (60V, 55A)
- FQP50N06 (60V, 50A)
Check datasheets for exact specs and pin compatibility.
- IRF3205 (55V, 110A)
- IRL40B209 (40V, 80A)
- STP55NF06L (60V, 55A)
- FQP50N06 (60V, 50A)
Check datasheets for exact specs and pin compatibility.
Features
The IRFU024NPBF is a 20V N-channel HEXFET Power MOSFET by Infineon, designed for high-efficiency power applications. Key features:
- Voltage Rating: 20V
- Current Rating: 70A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-frequency applications
- Low Gate Charge (Qg): 60nC (typical)
- Avalanche Energy Rated: Robust against inductive loads
- Package: TO-220 (through-hole), easy to mount
- Applications: DC-DC converters, motor control, power management
Compact, efficient, and reliable for demanding power circuits.
- Voltage Rating: 20V
- Current Rating: 70A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-frequency applications
- Low Gate Charge (Qg): 60nC (typical)
- Avalanche Energy Rated: Robust against inductive loads
- Package: TO-220 (through-hole), easy to mount
- Applications: DC-DC converters, motor control, power management
Compact, efficient, and reliable for demanding power circuits.
Pinout
The IRFU024NPBF is a dual N-channel MOSFET in a TO-252 (DPAK) package with 3 pins per MOSFET (total of 3 pins, as the two MOSFETs share common pins).
Pin Functions (per MOSFET):
1. Gate (G) – Controls the switching.
2. Drain (D) – Connected to the load (high-voltage side).
3. Source (S) – Connected to ground (common for both MOSFETs).
Key Features:
- 30V drain-source voltage (VDS)
- 12A continuous drain current (ID)
- Low on-resistance (RDS(on))
- Logic-level gate drive
Used in power switching, DC-DC converters, and motor control.
Pin Functions (per MOSFET):
1. Gate (G) – Controls the switching.
2. Drain (D) – Connected to the load (high-voltage side).
3. Source (S) – Connected to ground (common for both MOSFETs).
Key Features:
- 30V drain-source voltage (VDS)
- 12A continuous drain current (ID)
- Low on-resistance (RDS(on))
- Logic-level gate drive
Used in power switching, DC-DC converters, and motor control.
Application
The IRFU024NPBF, a HEXFET power MOSFET by Infineon, is commonly used in:
1. Switching Power Supplies – Efficient DC-DC conversion.
2. Motor Control – Drives in automotive and industrial systems.
3. LED Lighting – Power management in high-efficiency lighting.
4. Battery Management – Protection and charging circuits.
5. Automotive Electronics – Relays, solenoids, and load switches.
Its low on-resistance and high current handling make it ideal for high-efficiency, compact designs.
1. Switching Power Supplies – Efficient DC-DC conversion.
2. Motor Control – Drives in automotive and industrial systems.
3. LED Lighting – Power management in high-efficiency lighting.
4. Battery Management – Protection and charging circuits.
5. Automotive Electronics – Relays, solenoids, and load switches.
Its low on-resistance and high current handling make it ideal for high-efficiency, compact designs.
Package
The IRFU024NPBF is a power MOSFET in a TO-252AA (DPAK) surface-mount package. This package type is compact, suitable for high-current applications, and features a tab for heat dissipation. It is commonly used in power management circuits.
