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IRFS52N15DTRLP
+物料清單MOSFET N-CH 150V 51A D2PAK
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製造商英飛淩科技
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製造商部分 #IRFS52N15DTRLP
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規格
| 屬性 | 價值 |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 36A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | IRFS52 |
概述
Description
Key specifications include a maximum drain-source voltage (V_DS) of 150V, a continuous drain current (I_D) of 52A, and a low gate threshold voltage (V_GS(th)). Its robust construction allows for reliable performance in harsh environments.
The IRFS52N15DTRLP is packaged in a TO-220 format, facilitating effective heat dissipation. Overall, this MOSFET is ideal for applications demanding high power handling with minimal thermal generation, making it a popular choice in automotive, industrial, and consumer electronics sectors.
Equivalent
Features
- Voltage Rating: 150V maximum drain-source voltage (V_DS).
- Current Rating: Supports continuous drain current (I_D) of up to 52A.
- On-State Resistance: Low R_DS(on) of around 0.065 ohms at V_GS = 10V, which helps reduce conduction losses.
- Gate Threshold Voltage: V_GS(th) is typically between 2V to 4V, allowing for effective operation with lower gate voltages.
- Package: Available in a DPAK package, facilitating efficient thermal dissipation and compact design.
- Fast Switching: Suitable for high-speed applications, enhancing efficiency in power conversion circuits.
- Applications: Commonly used in power supplies, motor drives, and DC-DC converters.
Overall, the IRFS52N15DTRLP is ideal for demanding applications requiring reliable performance and efficiency in high-voltage environments.
Pinout
The pin configuration typically includes:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. and additional pins for further connectivity depending on the application.
This MOSFET features low on-resistance, which helps in reducing power loss and improving efficiency in electronic circuits. For detailed pin assignments, it's advisable to refer to the specific datasheet provided by the manufacturer.