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IRFR1010ZTRPBF
+物料清單MOSFET N-CH 55V 42A DPAK
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製造商英飛淩科技
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製造商部分 #IRFR1010ZTRPBF
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規格
| 屬性 | 價值 |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IRFR1010 |
概述
Description
Students can expect to learn how to interpret financial statements, analyze market trends, and make informed investment decisions. Additionally, it may emphasize the importance of ethical considerations and compliance in financial practices. For precise information, including course objectives, structure, and prerequisites, it's best to consult the educational institution offering the course.
Equivalent
Features
- Voltage Rating: 100V, allowing for high-voltage applications.
- Current Rating: 10A continuous drain current, suitable for various load requirements.
- R_DS(on): Low on-resistance (around 0.1 ohms), minimizing power loss during operation.
- Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, facilitating easy drive with low-voltage logic levels.
- Package Type: Available in a TO-220 package, enabling effective heat dissipation.
- Fast Switching Speeds: Suitable for high-frequency applications.
- RoHS Compliance: Meets environmental regulations for hazardous substances.
These features make the IRFR1010ZTRPBF ideal for power management in applications such as power supplies, motor drivers, and DC-DC converters.
Pinout
1. Gate (G): This pin controls the MOSFET's switching on and off.
2. Drain (D): This pin is the output where current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is the input where current enters when the device is conducting.
The IRFR1010ZTRPBF is designed for applications requiring efficient switching, such as in power management and motor control circuits. It features low on-resistance and high-speed switching capabilities.
Manufacturer
Infineon Technologies, the parent company, is a leading global semiconductor manufacturer headquartered in Germany, focusing on providing innovative semiconductor solutions for various markets, including automotive, industrial, and security applications. The company is recognized for its expertise in power management, sensor technologies, and automotive electronics, emphasizing sustainability and efficiency in its products.
Overall, the IRFR1010ZTRPBF is part of a broader portfolio of power semiconductor products aimed at improving energy efficiency and performance in electronic systems.