規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 130A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 9.7mOhm @ 81A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 241 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 10720 pF @ 50 V |
| Power Dissipation (Max) | 520W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
概述
Description
The IRFP4668PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features advanced silicon technology to provide low on-state resistance and fast switching speeds, making it suitable for high-power applications. The device typically operates with a voltage rating of 250V and can handle high current loads, often up to 120A, depending on the specific conditions.
The IRFP4668PBF is part of the HEXFET series, which is known for its ruggedness and reliability in demanding environments. Its TO-247AC package provides efficient heat dissipation, which is crucial for maintaining performance and longevity in high-temperature conditions. This MOSFET is often used in applications such as power supplies, motor drives, and DC-DC converters.
The "PBF" suffix indicates that this part is lead-free and RoHS compliant, aligning with environmental regulations. Its combination of high efficiency, robustness, and compliance with safety standards makes it a popular choice in both industrial and consumer electronics.
The IRFP4668PBF is part of the HEXFET series, which is known for its ruggedness and reliability in demanding environments. Its TO-247AC package provides efficient heat dissipation, which is crucial for maintaining performance and longevity in high-temperature conditions. This MOSFET is often used in applications such as power supplies, motor drives, and DC-DC converters.
The "PBF" suffix indicates that this part is lead-free and RoHS compliant, aligning with environmental regulations. Its combination of high efficiency, robustness, and compliance with safety standards makes it a popular choice in both industrial and consumer electronics.
Equivalent
The IRFP4668PBF is a N-channel MOSFET. Equivalent products may include:
1. STMicroelectronics STW48N60M2
2. Infineon IPT65R080
3. ON Semiconductor FDPF33N50
4. Vishay IRFP4368PBF
These alternatives have similar specifications but check datasheets to confirm compatibility with your application, noting parameters like voltage, current rating, and package type.
1. STMicroelectronics STW48N60M2
2. Infineon IPT65R080
3. ON Semiconductor FDPF33N50
4. Vishay IRFP4368PBF
These alternatives have similar specifications but check datasheets to confirm compatibility with your application, noting parameters like voltage, current rating, and package type.
Features
The IRFP4668PBF is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage and Current Ratings: This MOSFET offers a high voltage rating of 300V and supports a continuous current of up to 130A, making it suitable for demanding power applications.
2. Low On-State Resistance: It features a low R_DS(on) of approximately 13.8 mΩ, which helps minimize conduction losses and improve efficiency.
3. High-Speed Switching: The device is optimized for fast switching, which is beneficial in applications where switching frequency impacts overall performance.
4. Thermal Performance: It is housed in a TO-247AC package, offering efficient heat dissipation and robust thermal performance, which is critical for high-power operations.
5. Rugged Design: The MOSFET is designed to handle high energy and avalanche currents, providing reliability under stress conditions.
6. Lead-Free: The PBF suffix indicates it is lead-free and RoHS compliant, aligning with environmental standards.
These features make the IRFP4668PBF suitable for use in applications like power supplies, motor drives, and industrial equipment.
1. Voltage and Current Ratings: This MOSFET offers a high voltage rating of 300V and supports a continuous current of up to 130A, making it suitable for demanding power applications.
2. Low On-State Resistance: It features a low R_DS(on) of approximately 13.8 mΩ, which helps minimize conduction losses and improve efficiency.
3. High-Speed Switching: The device is optimized for fast switching, which is beneficial in applications where switching frequency impacts overall performance.
4. Thermal Performance: It is housed in a TO-247AC package, offering efficient heat dissipation and robust thermal performance, which is critical for high-power operations.
5. Rugged Design: The MOSFET is designed to handle high energy and avalanche currents, providing reliability under stress conditions.
6. Lead-Free: The PBF suffix indicates it is lead-free and RoHS compliant, aligning with environmental standards.
These features make the IRFP4668PBF suitable for use in applications like power supplies, motor drives, and industrial equipment.
Pinout
The IRFP4668PBF is a power MOSFET transistor commonly used for high-power applications. It is an N-channel MOSFET, and it comes in a TO-247AC package which typically has three pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the terminal through which the current exits the MOSFET.
The IRFP4668PBF is designed to handle high current and voltage loads with high efficiency, making it suitable for applications like power supplies, motor drives, and high-frequency switching.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the terminal through which the current exits the MOSFET.
The IRFP4668PBF is designed to handle high current and voltage loads with high efficiency, making it suitable for applications like power supplies, motor drives, and high-frequency switching.
Manufacturer
The IRFP4668PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company known for designing and manufacturing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security solutions. The company is a global leader in providing semiconductor technologies that drive energy efficiency, mobility, and security, serving various industries such as automotive, industrial, communications, and consumer electronics. Infineon's focus is on developing innovative products that address key challenges in these fields, emphasizing sustainability and technological advancement.
Application
The IRFP4668PBF is a power MOSFET commonly used in applications requiring high efficiency and fast switching. Key application areas include:
1. Switching Power Supplies: Utilized in converters and inverters for efficient power regulation.
2. Motor Control: Employed in drives for precision motor speed and torque control.
3. Audio Amplifiers: Used in Class D amplifiers for high-fidelity sound reproduction.
4. Renewable Energy Systems: Integrated into solar inverters and wind turbine converters.
5. Industrial Automation: Applied in control systems for machinery and robotics.
6. Electric Vehicles: Key component in the powertrain for battery management and propulsion systems.
The MOSFET's robust performance in high voltage and current environments makes it suitable for demanding power electronics applications.
1. Switching Power Supplies: Utilized in converters and inverters for efficient power regulation.
2. Motor Control: Employed in drives for precision motor speed and torque control.
3. Audio Amplifiers: Used in Class D amplifiers for high-fidelity sound reproduction.
4. Renewable Energy Systems: Integrated into solar inverters and wind turbine converters.
5. Industrial Automation: Applied in control systems for machinery and robotics.
6. Electric Vehicles: Key component in the powertrain for battery management and propulsion systems.
The MOSFET's robust performance in high voltage and current environments makes it suitable for demanding power electronics applications.
Package
The IRFP4668PBF is packaged in a TO-247AC (also known as TO-247) package. This is a through-hole, power transistor package designed to accommodate high power and high voltage applications.
