規格
| 屬性 | 價值 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 28A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 234 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4057 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概述
Description
The IRFP260NPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is part of the HEXFET® Power MOSFET family by Infineon Technologies. This component is known for its high power handling capabilities, making it suitable for applications like power supplies, motor drives, and DC-DC converters.
Key features of the IRFP260NPBF include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of 50A at 25°C, and a low on-resistance (R_DS(on)) of 0.04 ohms, resulting in efficient operation with minimal power loss. The MOSFET is housed in a TO-247 package, which provides good thermal performance and is suitable for efficient heat dissipation when mounted on heatsinks.
The IRFP260NPBF is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its robust design and efficient performance make it a popular choice for high-power electronics and industrial applications.
Key features of the IRFP260NPBF include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of 50A at 25°C, and a low on-resistance (R_DS(on)) of 0.04 ohms, resulting in efficient operation with minimal power loss. The MOSFET is housed in a TO-247 package, which provides good thermal performance and is suitable for efficient heat dissipation when mounted on heatsinks.
The IRFP260NPBF is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its robust design and efficient performance make it a popular choice for high-power electronics and industrial applications.
Equivalent
The IRFP260NPBF is a power MOSFET commonly used for switching applications. Similar or equivalent products include: IRFP260N, IRFP460, STP55NF06, and FDP047N10. These components share similar voltage and current ratings, but always double-check specific parameters like on-resistance, gate charge, and packaging to ensure compatibility with your application.
Features
The IRFP260NPBF is a high-power N-channel MOSFET designed for efficient power management. Key features include:
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 50A, making it suitable for high-power applications.
2. R_DS(on): It offers a low on-state resistance, approximately 0.04 ohms, reducing power loss and improving efficiency.
3. Package: Available in a TO-247AC package, which provides effective heat dissipation, essential for handling high power levels.
4. Temperature Range: It operates efficiently within a wide temperature range, enhancing reliability in various environments.
5. Gate Charge: Features a moderate total gate charge, facilitating rapid switching and enhancing performance in fast-switching applications.
6. Applications: Commonly used in power supplies, motor drives, and other applications requiring high-speed switching and high efficiency.
These attributes make the IRFP260NPBF suitable for robust, high-efficiency power control solutions.
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 50A, making it suitable for high-power applications.
2. R_DS(on): It offers a low on-state resistance, approximately 0.04 ohms, reducing power loss and improving efficiency.
3. Package: Available in a TO-247AC package, which provides effective heat dissipation, essential for handling high power levels.
4. Temperature Range: It operates efficiently within a wide temperature range, enhancing reliability in various environments.
5. Gate Charge: Features a moderate total gate charge, facilitating rapid switching and enhancing performance in fast-switching applications.
6. Applications: Commonly used in power supplies, motor drives, and other applications requiring high-speed switching and high efficiency.
These attributes make the IRFP260NPBF suitable for robust, high-efficiency power control solutions.
Pinout
The IRFP260NPBF is a type of power MOSFET commonly used in electronic applications for switching and amplifying electronic signals. It is typically housed in a TO-247 package and features three pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate changes the conductivity between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows out of the transistor. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which the main current enters the MOSFET. It is usually connected to the ground or the negative side of the circuit.
The IRFP260NPBF is an N-channel MOSFET, meaning it is turned on by applying a positive voltage to the gate relative to the source. It is widely used in high-power applications due to its high current and voltage ratings.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate changes the conductivity between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows out of the transistor. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which the main current enters the MOSFET. It is usually connected to the ground or the negative side of the circuit.
The IRFP260NPBF is an N-channel MOSFET, meaning it is turned on by applying a positive voltage to the gate relative to the source. It is widely used in high-power applications due to its high current and voltage ratings.
Manufacturer
The IRFP260NPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that designs, develops, and produces a wide range of semiconductor solutions. The company is known for its products in areas such as automotive, industrial power control, power management, digital security solutions, and IoT applications. Infineon's focus is on providing innovative and reliable semiconductor solutions to enhance efficiency and mobility across a variety of sectors.
Application
The IRFP260NPBF is a power MOSFET commonly used in applications requiring high-speed switching and high current capacity. It is suitable for:
1. Switching Power Supplies: Utilized in converters and inverters due to its efficiency.
2. Motor Drives: Ideal for controlling DC motor speeds in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Ensures reliability in power backup systems.
4. Solar Inverters: Converts DC from solar panels to AC for grid compatibility.
5. Audio Amplifiers: Provides efficient power handling for high-fidelity sound systems.
6. Induction Heating: Used in circuits that demand rapid switching capability.
These applications benefit from the MOSFET’s low on-state resistance and fast switching performance.
1. Switching Power Supplies: Utilized in converters and inverters due to its efficiency.
2. Motor Drives: Ideal for controlling DC motor speeds in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Ensures reliability in power backup systems.
4. Solar Inverters: Converts DC from solar panels to AC for grid compatibility.
5. Audio Amplifiers: Provides efficient power handling for high-fidelity sound systems.
6. Induction Heating: Used in circuits that demand rapid switching capability.
These applications benefit from the MOSFET’s low on-state resistance and fast switching performance.
Package
The IRFP260NPBF is packaged in a TO-247AC form. This type of package is commonly used for high-power transistors and other semiconductor devices, providing robust thermal performance and electrical isolation.
