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IRFD120PBF
+物料清單MOSFET N-CH 100V 1.3A 4DIP
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製造商矽尼克斯
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製造商部分 #IRFD120PBF
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規格
| 屬性 | 價值 |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD120 |
概述
Description
The IRFD120PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance, which minimizes power loss during operation, making it suitable for efficient power management in various electronic devices. With a maximum drain-source voltage of 60V and a continuous drain current rating of 33A, the IRFD120PBF can handle substantial loads.
This MOSFET is commonly used in power supplies, motor control circuits, and other applications requiring reliable switching performance. Its compact package and low thermal resistance enhance its reliability and efficiency in designs where space and heat dissipation are critical.
Additionally, the IRFD120PBF is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Overall, its performance characteristics make it a versatile choice for engineers looking for efficient power handling in their designs.
This MOSFET is commonly used in power supplies, motor control circuits, and other applications requiring reliable switching performance. Its compact package and low thermal resistance enhance its reliability and efficiency in designs where space and heat dissipation are critical.
Additionally, the IRFD120PBF is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Overall, its performance characteristics make it a versatile choice for engineers looking for efficient power handling in their designs.
Equivalent
The IRFD120PBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and PSMN2R5-30NL. Always verify specifications such as voltage, current ratings, and R_DS(on) to ensure compatibility for your application.
Features
The IRFD120PBF is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is up to 33A, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.05 ohms at a gate-source voltage (V_GS) of 10V, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2 to 4V, allowing for operation with lower gate voltages.
5. Fast Switching: Its fast switching capabilities make it ideal for power supply and motor control applications.
6. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation.
With these features, the IRFD120PBF is suitable for applications in power management, DC-DC converters, and automotive electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is up to 33A, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.05 ohms at a gate-source voltage (V_GS) of 10V, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2 to 4V, allowing for operation with lower gate voltages.
5. Fast Switching: Its fast switching capabilities make it ideal for power supply and motor control applications.
6. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation.
With these features, the IRFD120PBF is suitable for applications in power management, DC-DC converters, and automotive electronics.
Pinout
The IRFD120PBF is an N-channel MOSFET with a total of four pins. The pinout and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage between the gate and source allows the device to turn on.
2. Drain (D): The drain pin is where the load is connected; current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the load; current flows out of the source when the device is conducting.
4. Tab: The tab is typically connected to the source and is used for heat dissipation.
The IRFD120PBF is designed for various applications, including switching and amplification tasks, and is characterized by its low on-resistance and high-speed switching capabilities.
1. Gate (G): This pin is used to control the MOSFET; applying a voltage between the gate and source allows the device to turn on.
2. Drain (D): The drain pin is where the load is connected; current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the load; current flows out of the source when the device is conducting.
4. Tab: The tab is typically connected to the source and is used for heat dissipation.
The IRFD120PBF is designed for various applications, including switching and amplification tasks, and is characterized by its low on-resistance and high-speed switching capabilities.
Manufacturer
The IRFD120PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor and system solutions, focusing on various sectors such as automotive, industrial power control, and the Internet of Things (IoT). Infineon is known for its innovations in power semiconductor technologies, including power MOSFETs, IGBTs, and integrated circuits, catering to applications that require efficient power management and energy conversion. The IRFD120PBF specifically is an N-channel MOSFET designed for low-voltage applications, characterized by its high-speed switching capabilities and low on-resistance. Infineon serves a diverse customer base and is recognized for its commitment to quality and sustainability within the semiconductor industry.
Application
The IRFD120PBF is an N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Power Switching: Efficiently switching loads in power supplies and converters.
2. Motor Control: Driving DC motors in robotics and automotive applications.
3. LED Drivers: Controlling high-power LED lighting systems.
4. Amplifiers: Used in audio and RF amplification.
5. Battery Management: In battery protection circuits for over-voltage and over-current situations.
Its low on-resistance and fast switching capabilities make it suitable for these applications, enhancing performance and efficiency.
1. Power Switching: Efficiently switching loads in power supplies and converters.
2. Motor Control: Driving DC motors in robotics and automotive applications.
3. LED Drivers: Controlling high-power LED lighting systems.
4. Amplifiers: Used in audio and RF amplification.
5. Battery Management: In battery protection circuits for over-voltage and over-current situations.
Its low on-resistance and fast switching capabilities make it suitable for these applications, enhancing performance and efficiency.
Package
The IRFD120PBF is packaged in a TO-220 package type, which is a widely used format for power devices, providing good thermal performance and ease of mounting on heatsinks.
