規格
| 屬性 | 價值 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 51A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 32mOhm @ 36A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 89 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2770 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 230W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRFB52N15DPBF is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency and high-speed switching applications. It is part of the HEXFET® series by Infineon Technologies (formerly International Rectifier). This MOSFET is often used in power management applications, including DC-DC converters, motor drives, and other electronic devices that require efficient power handling.
Key specifications include:
- Drain-Source Voltage (Vds): 150V
- Continuous Drain Current (Id): 52A
- Rds(on): 0.028 Ohms, which indicates low on-state resistance for reduced power loss.
- Package: TO-220AB, a common package offering good thermal performance.
The IRFB52N15DPBF features fast switching speed, robust design, and high reliability, making it suitable for both industrial and consumer applications. It is lead-free and RoHS compliant, aligning with environmental regulations. The MOSFET’s efficiency and thermal performance make it a popular choice in modern electronic circuits requiring effective power management.
Key specifications include:
- Drain-Source Voltage (Vds): 150V
- Continuous Drain Current (Id): 52A
- Rds(on): 0.028 Ohms, which indicates low on-state resistance for reduced power loss.
- Package: TO-220AB, a common package offering good thermal performance.
The IRFB52N15DPBF features fast switching speed, robust design, and high reliability, making it suitable for both industrial and consumer applications. It is lead-free and RoHS compliant, aligning with environmental regulations. The MOSFET’s efficiency and thermal performance make it a popular choice in modern electronic circuits requiring effective power management.
Equivalent
The IRFB52N15DPBF is a N-channel MOSFET. Equivalent products could include other N-channel MOSFETs with similar specifications such as voltage, current, and Rds(on). Some potential equivalents are:
1. STMicroelectronics STL50N15F3
2. ON Semiconductor FDPF50N15
3. Vishay SiHP50N15E
Always verify compatibility by comparing the detailed specifications and datasheets to ensure they meet your application's requirements.
1. STMicroelectronics STL50N15F3
2. ON Semiconductor FDPF50N15
3. Vishay SiHP50N15E
Always verify compatibility by comparing the detailed specifications and datasheets to ensure they meet your application's requirements.
Features
The IRFB52N15DPBF is a power MOSFET designed for high-efficiency applications. It features:
1. N-Channel MOSFET: Suitable for high-speed switching applications.
2. VDSS (Drain-Source Voltage): 150V, allowing it to handle medium to high voltage applications.
3. RDS(on) (Drain-Source On-State Resistance): Low on-state resistance of around 0.044 ohms, which reduces power loss and increases efficiency.
4. ID (Continuous Drain Current): Approximately 52A, indicating the maximum current it can handle continuously without damage.
5. Technology: Based on advanced HEXFET® technology, providing improved switching speed and efficiency.
6. Package Type: TO-220AB, which offers good thermal performance with ease of mounting and heat dissipation.
7. Applications: Commonly used in power supply, motor control, and DC-DC conversion systems due to its fast switching speed and efficiency.
The IRFB52N15DPBF is RoHS compliant, ensuring it meets environmental and safety standards.
1. N-Channel MOSFET: Suitable for high-speed switching applications.
2. VDSS (Drain-Source Voltage): 150V, allowing it to handle medium to high voltage applications.
3. RDS(on) (Drain-Source On-State Resistance): Low on-state resistance of around 0.044 ohms, which reduces power loss and increases efficiency.
4. ID (Continuous Drain Current): Approximately 52A, indicating the maximum current it can handle continuously without damage.
5. Technology: Based on advanced HEXFET® technology, providing improved switching speed and efficiency.
6. Package Type: TO-220AB, which offers good thermal performance with ease of mounting and heat dissipation.
7. Applications: Commonly used in power supply, motor control, and DC-DC conversion systems due to its fast switching speed and efficiency.
The IRFB52N15DPBF is RoHS compliant, ensuring it meets environmental and safety standards.
Pinout
The IRFB52N15DPBF is a power MOSFET manufactured by Infineon Technologies. It typically comes in a TO-220 package with three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching operation. By applying a voltage to the gate, the device can be turned on or off.
2. Drain (D): This pin is connected to the main load circuit. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most configurations.
The IRFB52N15DPBF is used in various applications such as power management, motor control, and DC-DC converters, where efficient and high-speed switching is required.
1. Gate (G): This pin is used to control the MOSFET's switching operation. By applying a voltage to the gate, the device can be turned on or off.
2. Drain (D): This pin is connected to the main load circuit. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most configurations.
The IRFB52N15DPBF is used in various applications such as power management, motor control, and DC-DC converters, where efficient and high-speed switching is required.
Manufacturer
The IRFB52N15DPBF is manufactured by Infineon Technologies AG. Infineon is a semiconductor company that specializes in the design, development, and manufacturing of a broad range of semiconductor solutions. Their products are used in various applications such as automotive, industrial power control, power management, digital security solutions, and more. Infineon is known for its focus on energy efficiency, mobility, and security, offering products that drive technological advancements in sectors like automotive electronics, power management, and the Internet of Things (IoT).
Application
The IRFB52N15DPBF is a power MOSFET used in various applications requiring efficient power management and high-speed switching. Common application areas include:
1. Switching Power Supplies: Used in converters and inverters for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Helps in managing backup power systems.
4. Renewable Energy Systems: Used in solar inverters and wind turbine systems for energy conversion.
5. Battery Management Systems: Assists in charging and discharging control.
6. DC-DC Converters: Facilitates voltage regulation in electronic devices.
These applications benefit from the MOSFET's low on-state resistance and high-speed switching capabilities.
1. Switching Power Supplies: Used in converters and inverters for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Helps in managing backup power systems.
4. Renewable Energy Systems: Used in solar inverters and wind turbine systems for energy conversion.
5. Battery Management Systems: Assists in charging and discharging control.
6. DC-DC Converters: Facilitates voltage regulation in electronic devices.
These applications benefit from the MOSFET's low on-state resistance and high-speed switching capabilities.
Package
The IRFB52N15DPBF is a N-channel MOSFET that comes in a TO-220 package. This type of package is common for power transistors and provides efficient thermal management and easy mounting on circuit boards.
