規格
| 屬性 | 價值 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 76A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 20mOhm @ 44A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5380 pF @ 50 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRFB4127PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency switching applications and is commonly used in power management systems, motor drives, and inverter circuits.
Key features of the IRFB4127PBF include:
1. N-channel MOSFET: It is an N-channel device, which means it uses electrons as the charge carriers and typically offers lower on-resistance compared to P-channel MOSFETs.
2. Voltage and Current Ratings: This MOSFET can handle a drain-source voltage of up to 200 volts and a continuous drain current of 75 amperes, making it suitable for medium to high-power applications.
3. Low On-Resistance: It features low R_DS(on) (drain-source on-resistance), which minimizes power losses and enhances system efficiency.
4. Fast Switching: The device is optimized for fast switching, contributing to reduced switching losses and improved performance in high-frequency applications.
5. Package Type: It is typically available in a TO-220 or similar package, providing ease of mounting and thermal management.
Overall, the IRFB4127PBF is valued for its robust performance, efficiency, and reliability in various electronic applications.
Key features of the IRFB4127PBF include:
1. N-channel MOSFET: It is an N-channel device, which means it uses electrons as the charge carriers and typically offers lower on-resistance compared to P-channel MOSFETs.
2. Voltage and Current Ratings: This MOSFET can handle a drain-source voltage of up to 200 volts and a continuous drain current of 75 amperes, making it suitable for medium to high-power applications.
3. Low On-Resistance: It features low R_DS(on) (drain-source on-resistance), which minimizes power losses and enhances system efficiency.
4. Fast Switching: The device is optimized for fast switching, contributing to reduced switching losses and improved performance in high-frequency applications.
5. Package Type: It is typically available in a TO-220 or similar package, providing ease of mounting and thermal management.
Overall, the IRFB4127PBF is valued for its robust performance, efficiency, and reliability in various electronic applications.
Equivalent
The IRFB4127PBF is a N-channel MOSFET, and its equivalent products include:
1. IRFB4227PBF
2. IRFP4468PBF
3. STP40NF12
4. FQA34N30
5. FDP2552
These equivalents may vary slightly in specifications, so it's important to verify key parameters such as voltage, current, and package type to ensure compatibility with your specific application.
1. IRFB4227PBF
2. IRFP4468PBF
3. STP40NF12
4. FQA34N30
5. FDP2552
These equivalents may vary slightly in specifications, so it's important to verify key parameters such as voltage, current, and package type to ensure compatibility with your specific application.
Features
The IRFB4127PBF is an N-channel MOSFET designed by Infineon Technologies. Key features include:
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 200V and a continuous drain current (I_D) of 72A at 25°C.
2. R_DS(on): The device offers a low on-state resistance, typically around 0.0075 ohms, which reduces power loss and improves efficiency in high-current applications.
3. Technology: It utilizes advanced HEXFET® technology, providing fast switching speeds and improved performance.
4. Package: The MOSFET comes in a TO-220 package, which is commonly used for power devices due to its ability to handle substantial power dissipation.
5. Thermal Performance: It has an efficient thermal design, with a maximum junction temperature of 175°C, allowing for reliable operation under high thermal conditions.
6. Applications: Ideal for high-efficiency power supplies, motor control, and DC-DC converters, among other applications.
7. RoHS Compliant: The component is lead-free and RoHS compliant, adhering to environmental and safety standards.
These features make the IRFB4127PBF suitable for high-power and high-efficiency applications.
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 200V and a continuous drain current (I_D) of 72A at 25°C.
2. R_DS(on): The device offers a low on-state resistance, typically around 0.0075 ohms, which reduces power loss and improves efficiency in high-current applications.
3. Technology: It utilizes advanced HEXFET® technology, providing fast switching speeds and improved performance.
4. Package: The MOSFET comes in a TO-220 package, which is commonly used for power devices due to its ability to handle substantial power dissipation.
5. Thermal Performance: It has an efficient thermal design, with a maximum junction temperature of 175°C, allowing for reliable operation under high thermal conditions.
6. Applications: Ideal for high-efficiency power supplies, motor control, and DC-DC converters, among other applications.
7. RoHS Compliant: The component is lead-free and RoHS compliant, adhering to environmental and safety standards.
These features make the IRFB4127PBF suitable for high-power and high-efficiency applications.
Pinout
The IRFB4127PBF is a power MOSFET produced by Infineon Technologies. It is designed for high-efficiency and high-speed switching applications. The device is typically available in a TO-220 package, which has 3 pins. These pins and their functions are as follows:
1. Gate (G): This pin is used to control the ON and OFF states of the MOSFET. By applying a voltage to the gate, the user can control the current flow between the drain and source.
2. Drain (D): The drain is the pin where the main current flows into the MOSFET when it is in the ON state. It is connected to the load in switching applications.
3. Source (S): This pin is the return path for the current flowing out of the MOSFET. It is typically connected to the ground or the lower potential side in the circuit.
The IRFB4127PBF is commonly used in power management, motor control, and other high-speed switching applications due to its low on-resistance and high current-carrying capability.
1. Gate (G): This pin is used to control the ON and OFF states of the MOSFET. By applying a voltage to the gate, the user can control the current flow between the drain and source.
2. Drain (D): The drain is the pin where the main current flows into the MOSFET when it is in the ON state. It is connected to the load in switching applications.
3. Source (S): This pin is the return path for the current flowing out of the MOSFET. It is typically connected to the ground or the lower potential side in the circuit.
The IRFB4127PBF is commonly used in power management, motor control, and other high-speed switching applications due to its low on-resistance and high current-carrying capability.
Manufacturer
The IRFB4127PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company is known for producing power semiconductors, microcontrollers, sensors, automotive electronics, and security products. Infineon's products are used in various applications including automotive, industrial, consumer electronics, and communication systems. As a leading player in the semiconductor industry, Infineon focuses on innovation and sustainability, aiming to provide solutions that enhance energy efficiency, mobility, and security in modern technologies.
Application
The IRFB4127PBF is a HEXFET power MOSFET commonly used in various applications due to its high efficiency and reliability. Key application areas include:
1. Switching Power Supplies: Used in high-efficiency conversion systems.
2. DC-DC Converters: Suitable for voltage regulation and conversion tasks.
3. Motor Drives: Employed in controlling and driving electric motors.
4. Uninterruptible Power Supplies (UPS): Integral in maintaining power during outages.
5. Renewable Energy Systems: Used in solar inverters and wind turbine controllers.
6. Automotive Applications: For efficient power management in vehicles.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. Switching Power Supplies: Used in high-efficiency conversion systems.
2. DC-DC Converters: Suitable for voltage regulation and conversion tasks.
3. Motor Drives: Employed in controlling and driving electric motors.
4. Uninterruptible Power Supplies (UPS): Integral in maintaining power during outages.
5. Renewable Energy Systems: Used in solar inverters and wind turbine controllers.
6. Automotive Applications: For efficient power management in vehicles.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The IRFB4127PBF is typically available in a TO-220 package. This package type is commonly used for power MOSFETs and offers good thermal performance and mechanical stability, suitable for through-hole mounting applications.
