規格
| 屬性 | 價值 |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 43A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 54mOhm @ 26A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 91 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2900 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRFB38N20DPBF is a N-channel MOSFET from Infineon Technologies, designed for high-power applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- Low On-Resistance (RDS(on)): 0.085Ω (max at VGS=10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220AB (through-hole, easy to mount)
It is commonly used in switching power supplies, motor drives, and DC-DC converters due to its efficiency and robustness. The device includes an integrated fast-recovery diode for improved performance in inductive load applications.
For optimal operation, ensure proper gate drive voltage (10V recommended) and heat dissipation via a heatsink in high-current scenarios.
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- Low On-Resistance (RDS(on)): 0.085Ω (max at VGS=10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220AB (through-hole, easy to mount)
It is commonly used in switching power supplies, motor drives, and DC-DC converters due to its efficiency and robustness. The device includes an integrated fast-recovery diode for improved performance in inductive load applications.
For optimal operation, ensure proper gate drive voltage (10V recommended) and heat dissipation via a heatsink in high-current scenarios.
Equivalent
Equivalent products to the IRFB38N20DPBF (200V, 38A, N-channel MOSFET) include:
- IRFB38N20D (same series, slight variation)
- IRFB40N20DPBF (200V, 40A)
- IRFB42N20DPBF (200V, 42A)
- STP38N20M2 (STMicroelectronics, 200V, 38A)
- FDP38N20 (Fairchild/ON Semi, 200V, 38A)
Check datasheets for exact compatibility in your application.
- IRFB38N20D (same series, slight variation)
- IRFB40N20DPBF (200V, 40A)
- IRFB42N20DPBF (200V, 42A)
- STP38N20M2 (STMicroelectronics, 200V, 38A)
- FDP38N20 (Fairchild/ON Semi, 200V, 38A)
Check datasheets for exact compatibility in your application.
Features
The IRFB38N20DPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- RDS(on): 0.085Ω (max at VGS=10V)
- Fast Switching: Low gate charge (58nC) and fast switching speed
- Power Dissipation: 230W (with proper heat sinking)
- Package: TO-220AB (through-hole)
- Avalanche Energy Rated: Robust against voltage spikes
- Low Gate Drive: Fully enhanced at 10V (VGS)
Ideal for power switching, motor control, and inverters due to its high efficiency and rugged design.
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- RDS(on): 0.085Ω (max at VGS=10V)
- Fast Switching: Low gate charge (58nC) and fast switching speed
- Power Dissipation: 230W (with proper heat sinking)
- Package: TO-220AB (through-hole)
- Avalanche Energy Rated: Robust against voltage spikes
- Low Gate Drive: Fully enhanced at 10V (VGS)
Ideal for power switching, motor control, and inverters due to its high efficiency and rugged design.
Pinout
The IRFB38N20DPBF is a N-channel MOSFET in a TO-220AB package with 3 pins:
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal (low-voltage side).
Key Specifications:
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- RDS(on): 0.085Ω (max at VGS=10V)
- Power Dissipation: 200W
Function: Used for high-power switching in applications like motor drives, inverters, and power supplies.
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal (low-voltage side).
Key Specifications:
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- RDS(on): 0.085Ω (max at VGS=10V)
- Power Dissipation: 200W
Function: Used for high-power switching in applications like motor drives, inverters, and power supplies.
Application
The IRFB38N20DPBF, a 200V N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge inverters, brushed/brushless motor drives.
3. Automotive Systems – Electronic control units (ECUs), LED drivers.
4. Industrial Applications – High-efficiency inverters, welding equipment.
5. Renewable Energy – Solar charge controllers, wind power systems.
Its low on-resistance (RDS(on)) and high current handling (38A) make it suitable for high-power switching applications.
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge inverters, brushed/brushless motor drives.
3. Automotive Systems – Electronic control units (ECUs), LED drivers.
4. Industrial Applications – High-efficiency inverters, welding equipment.
5. Renewable Energy – Solar charge controllers, wind power systems.
Its low on-resistance (RDS(on)) and high current handling (38A) make it suitable for high-power switching applications.
Package
The IRFB38N20DPBF is a power MOSFET housed in a TO-220AB package. This package type is through-hole mounted, offers good thermal performance, and is commonly used for high-power applications. The TO-220AB features a metal tab for heat dissipation and is suitable for soldering or mounting with a heatsink.
