規格
| 屬性 | 價值 |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.1mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 170 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6920 pF @ 50 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Equivalent
Equivalent products to the IRFB3207ZPBF (100V, 210A MOSFET) include:
- IRFB3206ZPBF (similar specs, slightly lower current)
- IRFB3307ZPBF (higher voltage, comparable current)
- AUIRFB3207Z (same specs, Auto-grade variant)
- STP160N10F7 (100V, 160A, alternative from STMicro)
- IPB100N10S4-03 (100V, 100A, Infineon alternative)
Check datasheets for exact compatibility in your application.
- IRFB3206ZPBF (similar specs, slightly lower current)
- IRFB3307ZPBF (higher voltage, comparable current)
- AUIRFB3207Z (same specs, Auto-grade variant)
- STP160N10F7 (100V, 160A, alternative from STMicro)
- IPB100N10S4-03 (100V, 100A, Infineon alternative)
Check datasheets for exact compatibility in your application.
Features
The IRFB3207ZPBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 75V
- Current Rating: 210A (pulsed), 120A (continuous)
- Low On-Resistance (RDS(on)): 3.3 mΩ (max) @ VGS = 10V
- Fast Switching: Low gate charge (Qgs, Qgd) for efficient performance
- High Power Handling: Suitable for high-current applications
- Avalanche Rated: Robust against voltage spikes
- Package: TO-220AB (through-hole)
- Applications: Motor drives, power supplies, inverters, and DC-DC converters
This MOSFET is optimized for high efficiency and thermal performance in demanding power electronics.
- Voltage Rating: 75V
- Current Rating: 210A (pulsed), 120A (continuous)
- Low On-Resistance (RDS(on)): 3.3 mΩ (max) @ VGS = 10V
- Fast Switching: Low gate charge (Qgs, Qgd) for efficient performance
- High Power Handling: Suitable for high-current applications
- Avalanche Rated: Robust against voltage spikes
- Package: TO-220AB (through-hole)
- Applications: Motor drives, power supplies, inverters, and DC-DC converters
This MOSFET is optimized for high efficiency and thermal performance in demanding power electronics.
Application
The IRFB3207ZPBF, a high-power N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors.
3. Inverters – Solar inverters, UPS systems.
4. Automotive – Electric vehicle (EV) power systems.
5. Industrial Equipment – High-current switching applications.
Its low on-resistance (RDS(on)) and high current handling (75V, 180A) make it ideal for efficient power management in demanding environments.
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors.
3. Inverters – Solar inverters, UPS systems.
4. Automotive – Electric vehicle (EV) power systems.
5. Industrial Equipment – High-current switching applications.
Its low on-resistance (RDS(on)) and high current handling (75V, 180A) make it ideal for efficient power management in demanding environments.
Package
The IRFB3207ZPBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for power applications, offering good thermal performance and ease of mounting. The "Z" in the part number indicates it is lead-free and RoHS compliant. The TO-220AB package includes a metal tab for heat dissipation, making it suitable for high-current and high-voltage applications.
