規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 19A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 620 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 68W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概述
Description
The IRF9Z34NSTRLPBF is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. Manufactured by Infineon Technologies, this component is designed for high-efficiency power management solutions. Key characteristics include a maximum continuous drain current of -19A and a maximum drain-source voltage of -55V. The device exhibits a low on-state resistance (R_DS(on)), ensuring minimal power loss and heat generation, which is crucial for effective thermal management in power circuits.
The IRF9Z34NSTRLPBF is commonly used in applications such as power converters, load switches, and other power management systems, where high switching speed and efficiency are paramount. Its P-channel configuration makes it suitable for high-side switching applications. This MOSFET is available in a standard TO-220 package, which provides robust mechanical stability and efficient heat dissipation.
Overall, the IRF9Z34NSTRLPBF is valued for its reliability, efficiency, and ease of integration in various electronic circuits, making it a popular choice among engineers and designers in the semiconductor industry.
The IRF9Z34NSTRLPBF is commonly used in applications such as power converters, load switches, and other power management systems, where high switching speed and efficiency are paramount. Its P-channel configuration makes it suitable for high-side switching applications. This MOSFET is available in a standard TO-220 package, which provides robust mechanical stability and efficient heat dissipation.
Overall, the IRF9Z34NSTRLPBF is valued for its reliability, efficiency, and ease of integration in various electronic circuits, making it a popular choice among engineers and designers in the semiconductor industry.
Equivalent
The IRF9Z34NSTRLPBF is a P-channel MOSFET. Equivalent products include:
1. FQP27P06 from ON Semiconductor
2. SI9433BDY from Vishay
3. STP9P20FP from STMicroelectronics
These alternatives are similar in terms of voltage, current ratings, and MOSFET type, but always verify the specifications to ensure compatibility with your application.
1. FQP27P06 from ON Semiconductor
2. SI9433BDY from Vishay
3. STP9P20FP from STMicroelectronics
These alternatives are similar in terms of voltage, current ratings, and MOSFET type, but always verify the specifications to ensure compatibility with your application.
Features
The IRF9Z34NSTRLPBF is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. Key features include:
1. P-Channel Configuration: This MOSFET is designed for negative polarity operation, conducting when the gate-source voltage is at a negative threshold.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (Vds) of around -55V and a drain current (Id) of up to -20A, making it suitable for medium-power applications.
3. Low On-Resistance: It has a low on-state resistance (Rds(on)), which reduces power loss and improves efficiency when the MOSFET is in the 'on' state.
4. Surface Mount Package: The transistor is available in a TO-252 (DPAK) surface-mount package, which is conducive to automated assembly processes.
5. Applications: It is commonly used in applications such as load switches, DC-DC converters, and battery management systems where efficient switching is required.
These attributes make it a versatile component in various electronic circuits requiring efficient power management.
1. P-Channel Configuration: This MOSFET is designed for negative polarity operation, conducting when the gate-source voltage is at a negative threshold.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (Vds) of around -55V and a drain current (Id) of up to -20A, making it suitable for medium-power applications.
3. Low On-Resistance: It has a low on-state resistance (Rds(on)), which reduces power loss and improves efficiency when the MOSFET is in the 'on' state.
4. Surface Mount Package: The transistor is available in a TO-252 (DPAK) surface-mount package, which is conducive to automated assembly processes.
5. Applications: It is commonly used in applications such as load switches, DC-DC converters, and battery management systems where efficient switching is required.
These attributes make it a versatile component in various electronic circuits requiring efficient power management.
Pinout
The IRF9Z34NSTRLPBF is a P-channel MOSFET. It typically comes in a D-Pak (TO-252) package, which generally has three pins. The pin configuration typically includes:
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is on. In a P-channel MOSFET, the current flows from the source to the drain when the gate is activated.
3. Source (S): This is the terminal from which the current enters the MOSFET. In a P-channel device, it is typically connected to a positive voltage.
The IRF9Z34NSTRLPBF is used in various applications requiring efficient switching and amplification, including power management and motor control. Its P-channel nature makes it suitable for high-side switching applications.
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is on. In a P-channel MOSFET, the current flows from the source to the drain when the gate is activated.
3. Source (S): This is the terminal from which the current enters the MOSFET. In a P-channel device, it is typically connected to a positive voltage.
The IRF9Z34NSTRLPBF is used in various applications requiring efficient switching and amplification, including power management and motor control. Its P-channel nature makes it suitable for high-side switching applications.
Manufacturer
The IRF9Z34NSTRLPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that specializes in designing, manufacturing, and marketing a wide range of semiconductor solutions. It operates in various sectors including automotive, industrial power control, power management & multimarket, and digital security solutions. Infineon is known for its high-quality products and innovations in the field of semiconductors, making it a prominent player in the global technology market.
Application
The IRF9Z34NSTRLPBF is a P-channel MOSFET commonly used in various electronic applications. Its primary application areas include power management circuits, DC-DC converters, load switches, and motor control systems. It is also employed in battery-operated devices due to its efficiency and low on-resistance, which helps in reducing power loss. Additionally, it is suitable for use in automotive electronics, industrial systems, and consumer electronics for switching and amplifying applications where high current handling and low voltage operation are essential.
Package
The IRF9Z34NSTRLPBF is packaged in a D-Pak (TO-252) surface-mount package.
