規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 175mOhm @ 7.2A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 350 pF @ 25 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概述
Description
The IRF9Z24NPBF is a P-channel MOSFET from Infineon, designed for low-voltage, high-efficiency switching applications. Key features:
- Voltage Rating: -55V (Drain-to-Source, VDS).
- Current Rating: -19A (Continuous Drain Current, ID).
- Low On-Resistance: 50mΩ (max at VGS = -10V), reducing conduction losses.
- Fast Switching: Optimized for high-speed applications (e.g., power supplies, motor control).
- Logic-Level Gate Drive: Compatible with -10V gate drive (VGS).
Packaged in TO-220AB, it offers robust thermal performance. Common uses include DC-DC converters, battery management, and load switching.
Advantages: Low power dissipation, compact design, and reliable performance in switching circuits.
For detailed specs, refer to the datasheet.
- Voltage Rating: -55V (Drain-to-Source, VDS).
- Current Rating: -19A (Continuous Drain Current, ID).
- Low On-Resistance: 50mΩ (max at VGS = -10V), reducing conduction losses.
- Fast Switching: Optimized for high-speed applications (e.g., power supplies, motor control).
- Logic-Level Gate Drive: Compatible with -10V gate drive (VGS).
Packaged in TO-220AB, it offers robust thermal performance. Common uses include DC-DC converters, battery management, and load switching.
Advantages: Low power dissipation, compact design, and reliable performance in switching circuits.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the IRF9Z24NPBF (P-channel MOSFET, -55V, -19A, 0.077Ω) include:
- IRF9Z24N (same specs, different packaging)
- IRF9Z34NPBF (higher voltage, -55V, -12A, 0.18Ω)
- IRF4905PBF (-55V, -74A, 0.02Ω)
- STP9PF06 (-60V, -9A, 0.25Ω)
- FQP9P25 (-55V, -9A, 0.25Ω)
Check datasheets for exact compatibility.
- IRF9Z24N (same specs, different packaging)
- IRF9Z34NPBF (higher voltage, -55V, -12A, 0.18Ω)
- IRF4905PBF (-55V, -74A, 0.02Ω)
- STP9PF06 (-60V, -9A, 0.25Ω)
- FQP9P25 (-55V, -9A, 0.25Ω)
Check datasheets for exact compatibility.
Pinout
The IRF9Z24NPBF is a P-channel MOSFET in a TO-220 package with 3 pins (Gate, Drain, Source).
Key Specifications:
- Voltage (VDSS): -60V
- Current (ID): -19A (continuous)
- RDS(on): 0.055Ω (max at VGS = -10V)
- Gate Threshold (VGS(th)): -2V to -4V
Pin Functions:
1. Gate (G): Controls conduction.
2. Drain (D): Connects to load (negative side for P-channel).
3. Source (S): Connects to power supply (negative rail).
Commonly used in power switching, inverters, and motor control. Requires a negative gate voltage to turn on.
Key Specifications:
- Voltage (VDSS): -60V
- Current (ID): -19A (continuous)
- RDS(on): 0.055Ω (max at VGS = -10V)
- Gate Threshold (VGS(th)): -2V to -4V
Pin Functions:
1. Gate (G): Controls conduction.
2. Drain (D): Connects to load (negative side for P-channel).
3. Source (S): Connects to power supply (negative rail).
Commonly used in power switching, inverters, and motor control. Requires a negative gate voltage to turn on.
Application
The IRF9Z24NPBF, a P-channel MOSFET, is commonly used in:
1. Power Management – Switching and regulation in DC-DC converters, battery protection circuits.
2. Motor Control – Driving small motors in automotive and industrial systems.
3. Load Switching – Efficiently turning high-current loads on/off in power supplies.
4. Automotive Electronics – Used in 12V/24V systems for relays, solenoids, and LED drivers.
5. Portable Devices – Power distribution in laptops, tablets, and other battery-operated gadgets.
Its low on-resistance (RDS(on)) and high current handling (up to 19A) make it suitable for energy-efficient applications.
1. Power Management – Switching and regulation in DC-DC converters, battery protection circuits.
2. Motor Control – Driving small motors in automotive and industrial systems.
3. Load Switching – Efficiently turning high-current loads on/off in power supplies.
4. Automotive Electronics – Used in 12V/24V systems for relays, solenoids, and LED drivers.
5. Portable Devices – Power distribution in laptops, tablets, and other battery-operated gadgets.
Its low on-resistance (RDS(on)) and high current handling (up to 19A) make it suitable for energy-efficient applications.
Package
The IRF9Z24NPBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for its robustness, ease of mounting, and efficient heat dissipation. It features three leads (gate, drain, source) and is suitable for high-power applications. The TO-220AB package is a standard choice for power transistors and regulators.
