規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Discontinued at Digi-Key |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 4.6mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 165 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5250 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
概述
Description
The IRF9310PBF is a P-channel Power MOSFET from Infineon Technologies, designed for efficient power management in various applications.
Key Features:
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -5.6A (continuous drain current)
- Low On-Resistance (RDS(on)): 0.1Ω (max at VGS = -10V)
- Fast Switching: Suitable for high-frequency circuits
- Logic-Level Gate Drive: Compatible with 5V/10V signals
Applications:
- Power supplies
- Motor control
- DC-DC converters
- Load switching
Package: TO-252 (DPAK), surface-mountable for compact designs.
This MOSFET is robust, efficient, and widely used in low-voltage, high-current switching applications. Always refer to the datasheet for detailed specifications.
Key Features:
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -5.6A (continuous drain current)
- Low On-Resistance (RDS(on)): 0.1Ω (max at VGS = -10V)
- Fast Switching: Suitable for high-frequency circuits
- Logic-Level Gate Drive: Compatible with 5V/10V signals
Applications:
- Power supplies
- Motor control
- DC-DC converters
- Load switching
Package: TO-252 (DPAK), surface-mountable for compact designs.
This MOSFET is robust, efficient, and widely used in low-voltage, high-current switching applications. Always refer to the datasheet for detailed specifications.
Equivalent
Equivalent products to the IRF9310PBF (P-channel MOSFET, -100V, -12A) include:
- IRF9Z34N (-55V, -12A)
- IRF9Z24N (-55V, -12A)
- IRF4905 (-55V, -74A)
- FQP27P06 (-60V, -27A)
- STP80PF55 (-55V, -80A)
Check datasheets for exact specs and pin compatibility. Alternatives may vary in voltage/current ratings.
- IRF9Z34N (-55V, -12A)
- IRF9Z24N (-55V, -12A)
- IRF4905 (-55V, -74A)
- FQP27P06 (-60V, -27A)
- STP80PF55 (-55V, -80A)
Check datasheets for exact specs and pin compatibility. Alternatives may vary in voltage/current ratings.
Features
The IRF9310PBF is a P-channel HEXFET Power MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.6A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (RDS(on) at VGS = -10V)
- Fast Switching: Optimized for high-efficiency power applications
- Gate Threshold Voltage (VGS(th)): -2V to -4V
- Power Dissipation: 42W (TC = 25°C)
- Package: TO-220AB (Through-Hole Mounting)
- Avalanche Energy Rated: Improved ruggedness
Ideal for DC-DC converters, motor control, and power management in industrial/consumer applications.
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.6A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (RDS(on) at VGS = -10V)
- Fast Switching: Optimized for high-efficiency power applications
- Gate Threshold Voltage (VGS(th)): -2V to -4V
- Power Dissipation: 42W (TC = 25°C)
- Package: TO-220AB (Through-Hole Mounting)
- Avalanche Energy Rated: Improved ruggedness
Ideal for DC-DC converters, motor control, and power management in industrial/consumer applications.
Pinout
The IRF9310PBF is a P-channel power MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the MOSFET's switching.
2. Drain (D) – Connects to the load (higher voltage side for P-channel).
3. Source (S) – Connects to the power supply (lower voltage side).
Key Features:
- VDS: -30V
- ID: -5.6A (continuous)
- RDS(on): 0.15Ω (max at VGS = -10V)
- Logic-Level Gate Drive (fully enhanced at -10V).
Commonly used in power switching, DC-DC converters, and motor control.
1. Gate (G) – Controls the MOSFET's switching.
2. Drain (D) – Connects to the load (higher voltage side for P-channel).
3. Source (S) – Connects to the power supply (lower voltage side).
Key Features:
- VDS: -30V
- ID: -5.6A (continuous)
- RDS(on): 0.15Ω (max at VGS = -10V)
- Logic-Level Gate Drive (fully enhanced at -10V).
Commonly used in power switching, DC-DC converters, and motor control.
Manufacturer
The IRF9310PBF is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power management, automotive electronics, and IoT solutions. Known for high-quality components, it serves industries like automotive, industrial, and consumer electronics. The company was formerly part of Siemens before becoming independent in 1999.
Application
The IRF9310PBF, a P-channel MOSFET, is commonly used in:
1. Power Management – Voltage regulation and switching in DC-DC converters.
2. Motor Control – Driving small motors in robotics and automotive systems.
3. Battery Protection – Reverse polarity and discharge control in portable devices.
4. Load Switching – Efficient power switching in industrial and consumer electronics.
5. Audio Amplifiers – Output stage switching in Class-D amplifiers.
Its low on-resistance and high current capability make it suitable for energy-efficient applications.
1. Power Management – Voltage regulation and switching in DC-DC converters.
2. Motor Control – Driving small motors in robotics and automotive systems.
3. Battery Protection – Reverse polarity and discharge control in portable devices.
4. Load Switching – Efficient power switching in industrial and consumer electronics.
5. Audio Amplifiers – Output stage switching in Class-D amplifiers.
Its low on-resistance and high current capability make it suitable for energy-efficient applications.
Package
The IRF9310PBF is packaged in a TO-252 (DPAK) type. This surface-mount package is compact, suitable for high-power applications, and features a tab for heat dissipation. It is commonly used in power management circuits.
