規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.5Ohm @ 2.7A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 610 pF @ 25 V |
| Power Dissipation (Max) | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概述
Description
The IRF830PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. Manufactured by Vishay, it is part of the HEXFET® Power MOSFET series, known for their efficiency and robust performance. The IRF830PBF features a drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 4.5A, making it suitable for medium to high voltage applications.
This MOSFET has a low on-resistance (R_DS(on)) which minimizes power loss and improves efficiency, making it ideal for use in power conversion, motor drives, and lighting control. The device's fast switching capability allows it to handle high-speed operations, enhancing its applicability in switching power supplies and inverters.
Packaged in the standard TO-220, it offers ease of mounting and efficient heat dissipation with a metal tab for heat sink attachment. The "PBF" suffix indicates that the component is lead-free and RoHS compliant, aligning with environmental and safety standards.
This MOSFET has a low on-resistance (R_DS(on)) which minimizes power loss and improves efficiency, making it ideal for use in power conversion, motor drives, and lighting control. The device's fast switching capability allows it to handle high-speed operations, enhancing its applicability in switching power supplies and inverters.
Packaged in the standard TO-220, it offers ease of mounting and efficient heat dissipation with a metal tab for heat sink attachment. The "PBF" suffix indicates that the component is lead-free and RoHS compliant, aligning with environmental and safety standards.
Equivalent
The IRF830PBF is an N-channel MOSFET. Equivalent products include:
1. STMicroelectronics' STP10NK60Z.
2. ON Semiconductor's FDPF12N50T.
3. Vishay's SiHF830.
4. Fairchild's FQP6N90C.
These alternatives offer similar voltage and current ratings. Always verify specifications and pin configurations before substituting to ensure compatibility with your application.
1. STMicroelectronics' STP10NK60Z.
2. ON Semiconductor's FDPF12N50T.
3. Vishay's SiHF830.
4. Fairchild's FQP6N90C.
These alternatives offer similar voltage and current ratings. Always verify specifications and pin configurations before substituting to ensure compatibility with your application.
Features
The IRF830PBF is an N-channel Power MOSFET known for its efficiency and reliability in switching applications. Key features include:
1. Voltage & Current Ratings: It has a breakdown voltage of 500V and a continuous drain current of 4.5A, making it suitable for high-voltage applications.
2. RDS(on): The device has a low on-state resistance, typically around 1.5 ohms, which helps minimize power losses when the MOSFET is in the on state.
3. Fast Switching: The IRF830PBF is designed for rapid switching, which enhances performance in high-frequency applications.
4. Thermal Performance: It features a maximum junction temperature of 150°C and a TO-220 package with good thermal management characteristics, making it suitable for applications requiring efficient heat dissipation.
5. Applications: Commonly used in power supplies, motor control, and other high-speed switching applications due to its robust performance.
6. RoHS Compliance: The IRF830PBF is RoHS compliant, indicating it is free from hazardous substances and environmentally friendly.
These features make the IRF830PBF an effective choice for various electronic applications demanding reliable switching performance.
1. Voltage & Current Ratings: It has a breakdown voltage of 500V and a continuous drain current of 4.5A, making it suitable for high-voltage applications.
2. RDS(on): The device has a low on-state resistance, typically around 1.5 ohms, which helps minimize power losses when the MOSFET is in the on state.
3. Fast Switching: The IRF830PBF is designed for rapid switching, which enhances performance in high-frequency applications.
4. Thermal Performance: It features a maximum junction temperature of 150°C and a TO-220 package with good thermal management characteristics, making it suitable for applications requiring efficient heat dissipation.
5. Applications: Commonly used in power supplies, motor control, and other high-speed switching applications due to its robust performance.
6. RoHS Compliance: The IRF830PBF is RoHS compliant, indicating it is free from hazardous substances and environmentally friendly.
These features make the IRF830PBF an effective choice for various electronic applications demanding reliable switching performance.
Pinout
The IRF830PBF is an N-channel power MOSFET. It typically comes in a TO-220 package and has three pins. Here’s the pin configuration:
1. Gate (G): This is the control terminal for the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is turned on.
3. Source (S): This is the terminal where the current exits the MOSFET.
The IRF830PBF is used in various applications like switching power supplies, motor controls, and high-speed power switching. It offers features such as high-speed switching, high voltage capability, and low on-resistance.
1. Gate (G): This is the control terminal for the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is turned on.
3. Source (S): This is the terminal where the current exits the MOSFET.
The IRF830PBF is used in various applications like switching power supplies, motor controls, and high-speed power switching. It offers features such as high-speed switching, high voltage capability, and low on-resistance.
Manufacturer
The IRF830PBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor manufacturer known for producing a wide range of electronic components, including power semiconductors, microcontrollers, and sensors. The company focuses on providing innovative solutions for automotive, industrial, and consumer electronics markets. Infineon is recognized for its expertise in power electronics, system solutions, and energy efficiency.
Application
The IRF830PBF is a power MOSFET commonly used in applications requiring efficient switching and high-speed operations. Key application areas include:
1. Switching Power Supplies: Used in DC-DC converters and AC-DC power supplies for efficient power conversion.
2. Motor Drivers: Employed in controlling the speed and direction of motors in industrial and consumer applications.
3. Lighting Systems: Used in LED drivers and electronic ballasts for high-efficiency lighting solutions.
4. Audio Amplifiers: Utilized in Class D amplifiers for high-fidelity audio output.
5. Uninterruptible Power Supplies (UPS): Integral in battery management and power conversion systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. Switching Power Supplies: Used in DC-DC converters and AC-DC power supplies for efficient power conversion.
2. Motor Drivers: Employed in controlling the speed and direction of motors in industrial and consumer applications.
3. Lighting Systems: Used in LED drivers and electronic ballasts for high-efficiency lighting solutions.
4. Audio Amplifiers: Utilized in Class D amplifiers for high-fidelity audio output.
5. Uninterruptible Power Supplies (UPS): Integral in battery management and power conversion systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The IRF830PBF is typically available in a TO-220 package, which is a standard through-hole package used for power semiconductors.
