規格
| 屬性 | 價值 |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 7.8A, 8.9A |
| Rds On(Max) @ Id Vgs | 21.8mOhm @ 7.8A, 10V |
| Vgs(th)(Max) @ Id | 2.25V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.9nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 600pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
