規格
| 屬性 | 價值 |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 3.6A |
| RdsOn(Max)@IdVgs | 100mOhm @ 1.8A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 440pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The IRF7306TRPBF is a dual N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high-efficiency switching applications. Manufactured by Infineon Technologies, this component is part of the HEXFET® Power MOSFET family and is recognized for its compact size, low on-resistance, and high-speed switching capabilities. The device is packaged in a standard SO-8 package, which is suitable for surface-mount technology (SMT).
Key specifications include a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of up to 5.6A, making it ideal for low to medium power applications. The low gate charge facilitates fast switching, enhancing efficiency in power conversion and management tasks. The IRF7306TRPBF is commonly used in DC-DC converters, load switches, and power management systems due to its reliable performance and small footprint. Its robust design ensures reliability in demanding environments, making it a popular choice for designers aiming to optimize power density and thermal performance.
Key specifications include a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of up to 5.6A, making it ideal for low to medium power applications. The low gate charge facilitates fast switching, enhancing efficiency in power conversion and management tasks. The IRF7306TRPBF is commonly used in DC-DC converters, load switches, and power management systems due to its reliable performance and small footprint. Its robust design ensures reliability in demanding environments, making it a popular choice for designers aiming to optimize power density and thermal performance.
Equivalent
The IRF7306TRPBF is a dual N-channel MOSFET. Equivalent products that can be considered include:
1. FDS8958A by ON Semiconductor
2. Si4926DY by Vishay
3. AO4800 by Alpha & Omega Semiconductor
4. BSO320N03 by Infineon
Always verify the specifications to ensure compatibility with your specific application, as equivalent MOSFETs may have differences in parameters such as Rds(on), Vgs(th), or package type.
1. FDS8958A by ON Semiconductor
2. Si4926DY by Vishay
3. AO4800 by Alpha & Omega Semiconductor
4. BSO320N03 by Infineon
Always verify the specifications to ensure compatibility with your specific application, as equivalent MOSFETs may have differences in parameters such as Rds(on), Vgs(th), or package type.
Features
The IRF7306TRPBF is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Dual N-Channel MOSFETs: Combines two MOSFETs in a single package, optimizing space and reducing component count.
2. Low On-Resistance: Offers low R_DS(on) values, ensuring minimal conduction losses and improved efficiency.
3. Logic Level Gate Drive: Compatible with low-voltage gate drive signals, making it suitable for interfacing with microcontrollers and digital circuits.
4. SO-8 Package: Comes in a compact SO-8 surface-mount package for ease of integration into circuit boards.
5. Fast Switching Speed: Supports high-speed switching applications, enhancing performance in synchronous rectification and DC-DC conversion.
6. High Power Capability: Suitable for a wide range of applications that require robust power handling.
7. RoHS Compliant: Environmentally friendly with lead-free finish, aligning with global regulations.
These features make the IRF7306TRPBF ideal for applications in consumer electronics, computing, telecommunications, and other sectors that demand reliable and efficient power management solutions.
1. Dual N-Channel MOSFETs: Combines two MOSFETs in a single package, optimizing space and reducing component count.
2. Low On-Resistance: Offers low R_DS(on) values, ensuring minimal conduction losses and improved efficiency.
3. Logic Level Gate Drive: Compatible with low-voltage gate drive signals, making it suitable for interfacing with microcontrollers and digital circuits.
4. SO-8 Package: Comes in a compact SO-8 surface-mount package for ease of integration into circuit boards.
5. Fast Switching Speed: Supports high-speed switching applications, enhancing performance in synchronous rectification and DC-DC conversion.
6. High Power Capability: Suitable for a wide range of applications that require robust power handling.
7. RoHS Compliant: Environmentally friendly with lead-free finish, aligning with global regulations.
These features make the IRF7306TRPBF ideal for applications in consumer electronics, computing, telecommunications, and other sectors that demand reliable and efficient power management solutions.
Pinout
The IRF7306TRPBF is a dual N-channel MOSFET. It comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pin configuration and functions are as follows:
1. Pin 1 (G1): Gate of MOSFET 1
2. Pin 2 (S1): Source of MOSFET 1
3. Pin 3 (S2): Source of MOSFET 2
4. Pin 4 (G2): Gate of MOSFET 2
5. Pin 5 (D2): Drain of MOSFET 2
6. Pin 6 (D2): Drain of MOSFET 2 (internally connected to Pin 5)
7. Pin 7 (D1): Drain of MOSFET 1
8. Pin 8 (D1): Drain of MOSFET 1 (internally connected to Pin 7)
The IRF7306TRPBF is designed for general-purpose switching applications, offering low on-resistance and fast switching speeds. This makes it suitable for various power management and load-switching tasks in electronics.
1. Pin 1 (G1): Gate of MOSFET 1
2. Pin 2 (S1): Source of MOSFET 1
3. Pin 3 (S2): Source of MOSFET 2
4. Pin 4 (G2): Gate of MOSFET 2
5. Pin 5 (D2): Drain of MOSFET 2
6. Pin 6 (D2): Drain of MOSFET 2 (internally connected to Pin 5)
7. Pin 7 (D1): Drain of MOSFET 1
8. Pin 8 (D1): Drain of MOSFET 1 (internally connected to Pin 7)
The IRF7306TRPBF is designed for general-purpose switching applications, offering low on-resistance and fast switching speeds. This makes it suitable for various power management and load-switching tasks in electronics.
Manufacturer
The IRF7306TRPBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company headquartered in Neubiberg, Germany. It specializes in the design, development, and manufacturing of a wide range of semiconductor solutions. These solutions address applications in automotive, industrial power control, power management, chip card, and security markets. The company is known for providing innovative and reliable technologies with a focus on efficiency and cutting-edge development in the fields of energy efficiency, mobility, and security. Infineon has a global presence and is recognized for its contribution to the advancement of semiconductor technology.
Application
The IRF7306TRPBF is a dual N-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation circuits due to its efficiency in handling high currents and low voltage levels.
2. Switching Applications: Ideal for high-speed switching in power supplies and motor control systems.
3. Load Switching: Suitable for controlling loads in battery-operated devices, including laptops and smartphones.
4. Lighting Systems: Utilized in LED drivers and other lighting control systems.
5. Audio Amplifiers: Can be used to enhance audio performance in amplification circuits.
Its low on-resistance and fast switching capability make it versatile for various compact power management solutions.
1. Power Management: Used in DC-DC converters and voltage regulation circuits due to its efficiency in handling high currents and low voltage levels.
2. Switching Applications: Ideal for high-speed switching in power supplies and motor control systems.
3. Load Switching: Suitable for controlling loads in battery-operated devices, including laptops and smartphones.
4. Lighting Systems: Utilized in LED drivers and other lighting control systems.
5. Audio Amplifiers: Can be used to enhance audio performance in amplification circuits.
Its low on-resistance and fast switching capability make it versatile for various compact power management solutions.
Package
The IRF7306TRPBF is a dual N-channel MOSFET with a surface-mount package type known as SOIC-8 (Small Outline Integrated Circuit with 8 pins).
