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IRF7301TR
+物料清單MOSFET 2N-CH 20V 5.2A 8SOP
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製造商UMW公司
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製造商部分 #IRF7301TR
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有存貨27710
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規格
| 屬性 | 價值 |
| PartStatus | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 5.2A (Ta) |
| Vgs(th)(Max)@Id | 700mV @ 250µA |
| InputCapacitance(Ciss)(Max)@Vds | 660pF @ 15V |
| Power-Max | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SOP |
| RdsOn(Max)@Id,Vgs | 40mOhm @ 2.6A, 4.5V |
| GateCharge(Qg)(Max)@Vgs | 20nC @ 4.5V |
概述
Description
Key features of the IRF7301TR include low on-resistance, which minimizes power loss and improves efficiency, and a high-speed switching capability that enhances performance in high-frequency applications. The device comes in a compact surface-mount package, making it suitable for space-constrained designs. It also offers a variety of protective features like over-temperature and over-current protection, ensuring reliable operation across various conditions.
Manufactured by Infineon Technologies, the IRF7301TR is part of the extensive IRF series of MOSFETs, known for their reliability and performance in industrial and consumer electronics applications.
Equivalent
1. Vishay Siliconix SI4910DY
2. ON Semiconductor NTD3055-150
3. Fairchild Semiconductor FDS6898A
4. Infineon BSR303N
While these alternatives have comparable characteristics, always verify the datasheets to ensure compatibility with your specific application requirements.
Features
1. Low On-Resistance: This ensures minimal power loss, improving efficiency in applications such as DC-DC converters and power management circuits.
2. Fast Switching Speed: The IRF7301TR offers quick transition times, making it suitable for high-frequency applications.
3. Low Gate Charge: Reduces the power required to drive the MOSFET, enhancing overall efficiency.
4. Dual MOSFET Configuration: Provides convenience and space-saving benefits in designs requiring multiple MOSFETs.
5. Advanced Process Technology: Utilizes advanced silicon technology for improved performance and reliability.
6. Compact SO-8 Package: Allows for efficient use of PCB space, beneficial in compact or portable electronic devices.
7. 150°C Maximum Junction Temperature: Ensures reliability under high-temperature conditions.
These features make the IRF7301TR ideal for use in various consumer electronics, automotive, and industrial applications where space and power efficiency are critical.
Pinout
Here is a brief description of the pin functions:
1. Drain1 (D1): Connects to the drain of the first MOSFET.
2. Gate1 (G1): Connects to the gate of the first MOSFET, used to control its on/off state.
3. Source1 (S1): Connects to the source of the first MOSFET.
4. Source1 (S1): Another connection to the source of the first MOSFET (common in SOIC packages for thermal and current capability).
5. Source2 (S2): Connects to the source of the second MOSFET.
6. Gate2 (G2): Connects to the gate of the second MOSFET.
7. Drain2 (D2): Connects to the drain of the second MOSFET.
8. Drain2 (D2): Another connection to the drain of the second MOSFET.
This configuration allows for compact and efficient dual-MOSFET functionality in a single package.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and power supply units for efficient power regulation.
2. Motor Control: Used in driving motors and actuators in applications like robotics and industrial automation.
3. Load Switching: Suitable for switching various loads in electronic devices and systems.
4. Signal Amplification: Employed in amplifying low-level signals in audio and RF applications.
5. Consumer Electronics: Found in devices such as laptops, mobile phones, and other portable gadgets for battery management and power distribution.
These characteristics make it ideal for compact, efficient, and reliable electronic designs.